Page 1
查询BC368ZL1供应商
BC368 (NPN), BC369 (PNP)
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Emitter Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Total Device Dissipation
@ T
= 25°C
A
Derate above 25°C
Total Device Dissipation
@ T
= 25°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur .
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
CEO
CES
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
R
JA
R
JC
20 Vdc
25 Vdc
5.0 Vdc
1.0 Adc
625
5.0
1.5
12
−55 to
+150
200 °C/W
83.3 °C/W
mW
mW/°C
Watt
mW/°C
°C
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COLLECTOR
2
3
BASE
NPN PNP
1
EMITTER
COLLECTOR
2
3
BASE
1
EMITTER
MARKING
DIAGRAM
CASE 29
TO−92
STYLE 14
1
2
3
BC36x = Specific Device Code
x = 8 or 9
Y = Year
WW = Work Week
BC
36x
YWW
ORDERING INFORMATION
Device Package Shipping
BC368 TO−92
BC368ZL1 TO−92 2000/Ammo Pack
BC368ZL1G TO−92
BC369 TO−92 5000 Units/Box
BC369ZL1
BC369ZL1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Pb−Free)
TO−92 2000/Ammo Pack
TO−92
(Pb−Free)
5000 Units/Box
2000/Ammo Pack
2000/Ammo Pack
†
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 4
1 Publication Order Number:
BC368/D
Page 2
BC368 (NPN), BC369 (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 10 mA, IB = 0)
C
Collector−Base Breakdown Voltage
(I
= 100 A, IE = 0 )
C
Emitter−Base Breakdown Voltage
(I
= 100 A, IC = 0)
E
Collector Cutoff Current
(V
= 25 V, IE = 0)
CB
(V
= 25 V, IE = 0, TJ = 150°C)
CB
Emitter Cutoff Current
(V
= 5.0 V, IC = 0)
EB
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
= 1.0 V, IC = 0.5 A) BC368, 369
(V
CE
BC368−25
(V
= 1.0 V, IC = 1.0 A)
CE
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) f
Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) V
Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
CE(sat)
BE(on)
FE
20 − − Vdc
25 − − Vdc
5.0 − − Vdc
−
−
−
−
10
1.0
Adc
mAdc
− − 10 Adc
−
50
85
170
60
T
65 − − MHz
−
−
−
−
−
375
375
−
− − 0.5 V
− − 1.0 V
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2
Page 3
BC368 (NPN), BC369 (PNP)
200
100
70
50
, CURRENT GAIN
FE
h
20
1.0
0.8
0.6
T
= 25°C
J
VCE = 1.0 V
T
= 25°C
J
20
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
V
@ IC/IB = 10
BE(sat)
1.0
0.8
0.6
50 mA
0.4
, COLLECTOR VOLTAGE (VOLTS)
0.2
CE
V
200 500 0.02 0.05 0.2 0.5 2.0 5.0 20 50
100010 50 100
IC = 10 mA
0
0.01 0.1 10 1001.0
100 mA
500 mA
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
−0.8
−1.2
V
@ VCE = 1.0 V
BE(on)
−1.6
T
J
1000 mA
250 mA
= 25°C
0.4
V, VOLTAGE (VOLTS)
0.2
V
@ IC/IB = 10
CE(sat)
0
2.0 5.0 20 50 200 500
1.0 10 1000100
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
300
200
100
70
50
VCE = 10 V
T
= 25°C
J
f = 20 MHz
30
, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
T
f
10 20 50
I
, COLLECTOR CURRENT (mA)
C
100 200 500
Figure 5. Current−Gain — Bandwidth Product
1000
VB for V
−2.0
BE
−2.4
, TEMPERATURE COEFFICIENT (mV/ C)°θC, CAPACITANCE (pF)
VB
−2.8
1.0 10 10001002.0 5.0 20 50 200 500
I
, COLLECTOR CURRENT (mA)
C
Figure 4. Temperature Coefficient
160
120
80
40
0
C
obo
C
ibo
5.0
1.0
10
2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
15
3.0
T
= 25°C
J
20
4.0
C
ibo
C
obo
25
5.0
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Page 4
SEATING
PLANE
BC368 (NPN), BC369 (PNP)
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−1 1
ISSUE AL
NOTES:
A
B
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
N
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC368/D
4
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