Datasheet BC337-D Datasheet (ON Semiconductor)

Page 1
BC337, BC337-25, BC337-40
Amplifier Transistors
NPN Silicon
These are PbFree Devices
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage V
Collector Base Voltage V
Emitter Base Voltage V
Collector Current Continuous I
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, JunctiontoCase
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
45 Vdc
50 Vdc
5.0 Vdc
800 mAdc
625
5.0
1.5 12
55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
June, 2009 Rev. 7
1 Publication Order Number:
BC33
7xx
AYWW G
G
BC337xx = Device Code
(Refer to page 4) A = Assembly Location Y = Year WW = Work Week G =Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
BC337/D
Page 2
BC337, BC337−25, BC337−40
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
EmitterBase Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC337
(IC = 300 mA, VCE = 1.0 V)
BaseEmitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
Collector Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC33725 BC33740
Symbol Min Ty p Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
V
BE(on)
V
CE(sat)
C
f
FE
ob
T
45 Vdc
50 Vdc
5.0 Vdc
100 nAdc
100 nAdc
100 nAdc
100 160 250
60
630 400 630
1.2 Vdc
0.7 Vdc
15 pF
210 MHz
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
THERMAL RESISTANCE
0.03
0.02
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.05
0.02
D = 0.5
0.2
0.1
0.01
SINGLE PULSE
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
qJC(t) = (t) q
JC
qJC = 100°C/W MAX q
(t) = r(t) q
JA
JA
qJA = 375°C/W MAX D CURVES APPLY FOR POWER
2
PULSE TRAIN SHOWN READ TIME AT t T
TC = P
J(pk)
(pk) qJC
t, TIME (SECONDS)
Figure 1. Thermal Response
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2
1
(t)
Page 3
BC337, BC337−25, BC337−40
)
1000
1.0 ms1.0 s
dc T
= 25°C
C
100
, COLLECTOR CURRENT (mA)
C
I
dc
TA = 25°C
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED V
10
CEO
)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Active Region Safe Operating Area
1.0 TJ = 25°C
0.8
0.6
TJ = 135°C
TJ = 135°C
100 ms
1000
VCE = 1 V T
= 25°C
J
100
, DC CURRENT GAIN
FE
h
1001.0 3.0 10 30
10
1.0
10000.1 10 100
IC, COLLECTOR CURRENT (MA)
Figure 3. DC Current Gain
1.0 TA = 25°C
0.8
0.6
V
BE(sat)
@ IC/IB = 10
V
BE(on)
@ VCE = 1 V
0.4
IC = 10 mA
100 mA 300 mA 500 mA
0.4
V, VOLTAGE (VOLTS)
0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS
CE
V
0
0.01 0.1 10 1001 IB, BASE CURRENT (mA)
Figure 4. Saturation Region
+1
qVC for V
CE(sat)
0.2
V
@ IC/IB = 10
CE(sat)
0
1 10 1000100
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
0
C
ib
10
-1
C
qVB for V
-2
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
V
BE
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
1
0.1 11 10 100 1000
10 100
VR, REVERSE VOLTAGE (VOLTS)
ob
Figure 6. Temperature Coefficients
Figure 7. Capacitances
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3
Page 4
BC337, BC337−25, BC337−40
ORDERING INFORMATION
Device Marking Package Shipping
BC337G 7
BC337RL1G 7 2000 / Tape & Reel
BC337025G 725 5000 Units / Bulk
BC33725RL1G 725 2000 / Tape & Reel
BC33725ZL1G 725 2000 / Ammo Box
BC337040G 740 5000 Units / Bulk
BC33740RL1G 740 2000 / Tape & Reel
BC33740ZL1G 740 2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TO−92
(PbFree)
5000 Units / Bulk
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4
Page 5
BC337, BC337−25, BC337−40
l
PACKAGE DIMENSIONS
TO92 (TO−226)
CASE 2911
ISSUE AM
SEATING PLANE
R
T
SEATING PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 R 0.115 --- 2.93 --- V 0.135 --- 3.43 ---
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80 J 0.39 0.50 K 12.70 --- N 2.04 2.66 P 1.50 4.00 R 2.93 --- V 3.43 ---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC337/D
5
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