Page 1
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
BC327/328
1
1. Collector 2. Base 3. Emitter
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CES
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -5 V
Collector Current (DC) -800 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
BV
BV
BV
I
CES
h
h
V
V
f
T
C
CEO
CES
EBO
FE1
FE2
CE
BE
ob
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current
: BC327
: BC328
DC Current Gain
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
(on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 100 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF
Ta=25°C unless otherwise noted
: BC327
: BC328
: BC327
: BC328
Ta=25°C unless otherwise noted
IC= -10mA, IB=0
IC= -0.1mA, VBE=0
= -45V, VBE=0
V
CE
V
= -25V, VBE=0
CE
VCE= -1V, IC= -100mA
= -1V, IC= -300mA
V
CE
-45
-25
-50
-30
100
40
-50
-30
-45
-25
-2
-2
V
V
V
V
-100
-100nAnA
630
V
V
V
V
h
Classification
FE
Classification 16 25 40
h
FE1
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
100 ~ 250 160 ~ 400 250 ~ 630
60- 100- 170-
Page 2
Typical Characteristics
BC327/328
= - 5.0mA
I
B
= - 4.5mA
B
I
= - 4.0mA
B
I
I
IB = - 1.0mA
IB = - 0.5mA
= - 3.5mA
B
= - 3.0mA
B
I
= - 2.5mA
B
I
I
B
IB = 0
= - 2.0mA
I
B
= - 1.5mA
[mA], COLLECTOR CURRENT
C
I
-500
-400
-300
-200
-100
-0
-1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
P
= 600mW
T
PULSE
VCE = - 2.0V
- 1.0V
= - 50
I
B
A
µ
= - 10
B
P
= 600mW
T
A
µ
A
µ
A
µ
A
µ
A
µ
= - 40
I
B
= - 30
I
B
= - 20
I
B
I
IB = 0
-20
-16
-12
I
B
= - 80
I
B
A
µ
= - 70
µ
= - 60
I
B
A
-8
[mA], COLLECTOR CURRENT
-4
C
I
-10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
VCE(sat)
IC = 10 I
PULSE
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
VCE = -1V
PULSE
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
VBE[V], BASE-EMITTER VOLTAGE
1000
100
[MHz], GAIN-BANDWIDTH PRODUCT
T
f
10
-1 -10 -100
IC[mA], COLLECTOR CURRENT
VCE = -5.0V
Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
Page 3
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
BC327/328
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
Page 4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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