Page 1
PNP Silicon AF Transistors BC 327
BC 328
● High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 337, BC 338 (NPN)
2
3
1
Type Marking
BC 327
– TO-92
BC 327-16
BC 327-25
BC 327-40
BC 328
BC 328-16
BC 328-25
BC 328-40
Ordering Code
Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
Pin Configuration
1 2 3
C B E
Package
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
Page 2
Maximum Ratings
BC 327
BC 328
Parameter Symbol
Collector-emitter voltage V
CE0 45 V
Collector-base voltage VCB0 50
Emitter-base voltage V
EB0
Collector current IC mA
Peak collector current ICM A
Base current I
B mA
Peak base current IBM
Total power dissipation, T
Junction temperature T
Storage temperature range T
C =66 ˚C Ptot mW
j ˚C
stg – 65 … + 150
Values
BC 327 Unit
BC 328
25
30
5
800
1
100
200
625
150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Junction - case
1)
Rth JC ≤ 135
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 2
Page 3
Electrical Characteristics
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 327
BC 328
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA
BC 327
BC 328
Collector-base breakdown voltage
C = 100 µA
(BR)CB0
V
BC 327
BC 328
V
Emitter-base breakdown voltage
E = 10 µA
Collector cutoff current
(BR)EB0 5––
I
CB0
VCB = 25 V BC 328
CB = 45 V BC 327
V
CB = 25 V, TA = 150 ˚C BC 328
V
CB = 45 V, TA = 150 ˚C BC 327
V
EB = 4 V
V
DC current gain
C = 100 mA; VCE = 1 V
1)
I
EB0 – – 100
FE
h
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
C = 300 mA; VCE = 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
Collector-emitter saturation voltage
C = 500 mA; IB = 50 mA
Base-emitter saturation voltage
C = 500 mA; IB = 50 mA
1)
1)
VCEsat – – 0.7
VBEsat ––2
45
25
50
30
–
–
–
–
100
160
250
60
100
170
–
–
–
–
–
–
–
–
160
250
350
–
–
–
–
–
–
–
100
100
10
10
250
400
630
–
–
–
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter cutoff current
–
V
1)
Pulse test: t≤ 300 µs, D ≤ 2%.
Semiconductor Group 3
Page 4
Electrical Characteristics
I
A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
BC 327
BC 328
UnitValuesParameter Symbol
min. typ. max.
C = 50 mA, VCE = 5 V, f = 20 MHz
CB = 10 V, f = 1 MHz
V
Input capacitance
EB = 0.5 V, f = 1 MHz
V
f
T – 200 –
C
obo –12–
C
ibo –60–
MHzTransition frequency
pFOutput capacitance
Semiconductor Group 4
Page 5
BC 327
BC 328
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Collector current I
CE = 1 V
V
C = f (VBE)
Collector cutoff current I
CB = 45 V
V
CB0 = f (TA)
Semiconductor Group 5
Page 6
BC 327
BC 328
DC current gain hFE = f (IC)
CE = 1 V
V
Transition frequency fT = f (IC)
f = 20 MHz, T
A = 25 ˚C
Collector-emitter saturation voltage
CEsat = f (IC)
V
FE = 10
h
Base-emitter saturation voltage
BEsat = f (IC)
V
FE = 10
h
Semiconductor Group 6
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