Datasheet BC307B, BC307 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ndbook, halfpage

M3D186

BC307; BC307B

PNP general purpose transistors

Product specification
File under Discrete Semiconductors, SC04

1997 Mar 07

Philips Semiconductors Product specification

PNP general purpose transistors BC307; BC307B

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

PINNING

PIN DESCRIPTION

1 emitter
2 base

APPLICATIONS

3 collector

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC237 and BC237B.

handbook, halfpage

1

2

3

MAM281

3

2

1

Fig.1 Simplified outline (TO-92; SOT54) and

symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I
P
h

CBO
CEO

CM

tot

FE

collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
peak collector current −−200 mA
total power dissipation T

≤ 25 °C − 500 mW

amb

DC current gain IC= −2 mA; VCE= −5V

BC307 125 455
BC307B 222 455

f

T

transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 − MHz

1997 Mar 07 2

Philips Semiconductors Product specification

PNP general purpose transistors BC307; BC307B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T

≤ 25 °C; note 1 − 500 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 250 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

1997 Mar 07 3

Philips Semiconductors Product specification

PNP general purpose transistors BC307; BC307B

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

f

T

F noise figure I

collector cut-off current IE= 0; VCB= −30 V; −−15 nA

= 0; VCB= −30 V; Tj= 150 °C −−4µA

I

E

emitter cut-off current IC= 0; VEB= −4V −−15 nA
DC current gain IC= −2 mA; VCE= −5 V; see Fig.2

BC307 125 455

BC307B 222 455
collector-emitter saturation voltage IC= −100 mA; IB= −5 mA; note 1 −−600 mV
base-emitter saturation voltage IC= −100 mA; IB= −5 mA; note 1 −−1.1 V
base-emitter voltage IC= −2 mA; VCE= −5 V; note 1 600 720 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 3pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz;

100 − MHz

note 1

= −200 µA; VCE= −5 V; RS=2kΩ;

C

− 10 dB

f = 1 kHz; B = 200 Hz

Note

1. Pulse test: t

400

handbook, full pagewidth

h

FE

300

200

100

0

−2

10

≤ 300 µs; δ≤0.02.

p

−1

10

MBH727

VCE = 5 V

2

1

10 10

10

IC (mA)

3

BC307B.

Fig.2 DC current gain; typical values.

1997 Mar 07 4

Philips Semiconductors Product specification

PNP general purpose transistors BC307; BC307B

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

5.2

mm

5.0

OUTLINE
VERSION

SOT54 TO-92 SC-43

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.40

4.8

4.4

0.56

IEC JEDEC EIAJ

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

97-02-28

1997 Mar 07 5

Philips Semiconductors Product specification

PNP general purpose transistors BC307; BC307B

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Mar 07 6

Philips Semiconductors Product specification

PNP general purpose transistors BC307; BC307B

NOTES

1997 Mar 07 7

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© Philips Electronics N.V. 1997 SCA53
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Mar07 Document order number: 9397 750 01294