Datasheet BC237-D Datasheet (ON Semiconductor)

Page 1
BC237B
s
Amplifier Transistors
NPN Silicon
Features
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V Collector−Emitter Voltage V Collector−Emitter Voltage V Collector Current − Continuous I Total Power Dissipation @ TA = 25°C
Derate above T
Total Power Dissipation @ TA = 25°C
Derate above T
Operating and Storage Temperature Range
= 25°C
A
= 25°C
A
CEO CES EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
45 Vdc 50 Vdc
6.0 Vdc 100 mAdc 350
2.8
1.0
8.0
−55 to +150 °C
357 °C/W 125 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
BC23
7B
AYWWG
G
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1 Publication Order Number:
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC237B TO−92 5000 Units / Bulk BC237BG TO−92
(Pb−Free)
BC237BRL1G TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD801 1/D.
5000 Units / Bulk
2000 / Tape & Reel
BC237/D
Page 2
BC237B
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
= 2.0 mA, IB = 0)
(I
C
Emitter−Base Breakdown Voltage
= 100 mA, IC = 0)
(I
E
Collector Cutoff Current
(V
= 50 V, VBE = 0)
CE
(VCE = 50 V, VBE = 0) TA = 125°C
ON CHARACTERISTICS
DC Current Gain
= 10 mA, VCE = 5.0 V)
(I
C
(IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)
Collector−Emitter On Voltage
(I
= 10 mA, IB = 0.5 mA)
C
(IC = 100 mA, IB = 5.0 mA)
Base−Emitter Saturation Voltage
(I
= 10 mA, IB = 0.5 mA)
C
(IC = 100 mA, IB = 5.0 mA)
Base−Emitter On Voltage
= 100 mA, VCE = 5.0 V)
(I
C
(IC = 2.0 mA, VCE = 5.0 V)
= 100 mA, VCE = 5.0 V)
(I
C
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
= 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(I
C
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(V
= 0.5 V, IC = 0, f = 1.0 MHz)
EB
Noise Figure
= 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
(I
C
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)EBO
I
CES
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
obo
C
NF
FE
T
ibo
45
6.0
200
0.55
150
0.2
0.2
150 290 180
0.07
0.2
0.6
0.5
0.62
0.83
100 200
15
4.0
460
0.2
0.6
0.83
1.05
0.7
4.5 pF
8.0 pF
nA mA
MHz
dB
2.0 10
V
V
V
V
V
http://onsemi.com
2
Page 3
BC237B
2.0
1.5
1.0
0.8
0.6
0.4
, NORMALIZED DC CURRENT GAIN
0.3
FE
h
0.2
400 300
200
100
1.0 VCE = 10 V T
= 25°C
A
0.9
0.8
0.7
0.6
TA = 25°C
V
BE(sat)
@ IC/IB = 10
V
BE(on)
@ VCE = 10 V
0.5
0.4
V, VOLTAGE (VOLTS)
0.3
I
, COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
0.2
0.1
0
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
0.20.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I
, COLLECTOR CURRENT (mAdc)
C
Figure 2. “Saturation” and “On” Voltages
V
CE(sat)
@ IC/IB = 10
10
7.0
TA = 25°C
5.0
C
ib
VCE = 10 V T
= 25°C
80
A
60
40
3.0
2.0
C, CAPACITANCE (pF)
C
ob
30
20
, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
T
f
0.5 1.00.7 2.0 3.0 5.0 7.0 10 20 30 50 , COLLECTOR CURRENT (mAdc)
I
C
Figure 3. Current−Gain — Bandwidth Product
170
160
150
140
130
, BASE SPREADING RESISTANCE (OHMS)
b
r
120
1.0
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
VCE = 10 V f = 1.0 kHz TA = 25°C
I
, COLLECTOR CURRENT (mAdc)
C
Figure 5. Base Spreading Resistance
100.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
http://onsemi.com
3
Page 4
BC237B
TO−92 (TO−226)
PACKAGE DIMENSIONS
CASE 29−1 1
ISSUE AM
SEATING PLANE
R
T
SEATING PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80 J 0.39 0.50 K 12.70 −−− N 2.04 2.66 P 1.50 4.00 R 2.93 −−− V 3.43 −−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local Sales Representative
BC237/D
4
Loading...