Datasheet BC237, BC237B Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BC237; BC237B
NPN general purpose transistors
Product specification Supersedes data of 1997 Mar 06 File under Discrete Semiconductors, SC04
1997 Sep 04
Page 2
Philips Semiconductors Product specification
NPN general purpose transistors BC237; BC237B

FEATURES

Low current (max. 100 mA)
Low voltage (max. 45 V).

PINNING

PIN DESCRIPTION
1 emitter 2 base

APPLICATIONS

3 collector
General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B.
handbook, halfpage
1
2
3
MAM182
3
2
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V I P h
CBO CEO
CM
tot
FE
collector-base voltage open emitter 50 V collector-emitter voltage open base 45 V peak collector current 200 mA total power dissipation T
25 °C 500 mW
amb
DC current gain IC= 2 mA; VCE=5V
BC237 120 460 BC237B 200 460
f
T
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 MHz
1997 Sep 04 2
Page 3
Philips Semiconductors Product specification
NPN general purpose transistors BC237; BC237B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter 50 V collector-emitter voltage open base 45 V emitter-base voltage open collector 6V collector current (DC) 100 mA peak collector current 200 mA peak base current 200 mA total power dissipation T
25 °C; note 1 500 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 04 3
Page 4
Philips Semiconductors Product specification
NPN general purpose transistors BC237; BC237B

CHARACTERISTICS

T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
collector cut-off current IE= 0; VCB=30V −−15 nA
I
= 0; VCB= 30 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA DC current gain IC= 0.1 mA; VCE= 5 V; see Fig.2 250 DC current gain IC= 2 mA; VCE= 5 V; see Fig.2
BC237 120 460
BC237B 200 460 collector-emitter saturation voltage IC= 100 mA; IB= 5 mA; note 1 −−600 mV base-emitter saturation voltage IC= 100 mA; IB=5mA −−1200 mV base-emitter voltage IC= 2 mA; VCE= 5 V 580 700 mV collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz 11 pF emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz 1.5 pF transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
300
handbook, full pagewidth
h
FE
200
100
0
2
10
300 µs; δ≤0.02.
p
1
10
MBH724
VCE = 5 V
2
1
10 10
10
IC (mA)
3
Fig.2 DC current gain; typical values.
1997 Sep 04 4
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Philips Semiconductors Product specification
NPN general purpose transistors BC237; BC237B

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE VERSION
SOT54 TO-92 SC-43
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.40
4.8
4.4
0.56
IEC JEDEC EIAJ
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
97-02-28
1997 Sep 04 5
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Philips Semiconductors Product specification
NPN general purpose transistors BC237; BC237B

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Sep 04 6
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Philips Semiconductors Product specification
NPN general purpose transistors BC237; BC237B
NOTES
1997 Sep 04 7
Page 8
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Sep 04 Document order number: 9397 750 02839
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