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GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC161 is a silicon planar epitaxial PNP
transistors in Jedec TO-39 metal case. They are
particularly designed for audio amplifiers and
switchingapplicationup to 1A.
The complementaryNPNtypeis the BC141.
BC161
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -60 V
CBO
Collector-Emitter Voltage (IB=0) -60 V
CEO
Emitter-Base V oltage (IC=0) -5 V
EBO
Collect or Current -1 A
I
C
Base Current -0.1 A
I
B
Total Dissipati on at T
tot
Stora ge Tem perat u re -55 to 175
stg
Max. Operati ng Junct ion Tem per at u r e 175
T
j
at T
amb
case
≤ 45oC
≤ 45oC
0.65
3.7
W
W
o
C
o
C
November 1997
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BC161
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n-Cas e Max
Thermal Resistance Junction-Ambient Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR) CBO
CES
Collector C ut -off
Current (V
BE
∗ Collect or- Base
=0)
=-60V
V
CE
V
=-60V T
CE
I
=-100µA-60V
C
amb
=150oC
-100
-100nAµA
Break dow n Voltage
=0)
(I
E
V
∗ Collect or- Emitter
(BR) CEO
I
=-10mA -60 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
∗ Emitt er-Base
I
=-100µA-5V
E
Break dow n Voltage
=0)
(I
C
V
∗ Co llector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter O n
BE(on)
IC=-100mA IB=-10mA
=-500mA IB=-50mA
I
C
=-1A IB= - 100 mA
I
C
IC=-1A VCE= -1 V -1 -1.7 V
-0.1
-0.35
-0.6 -1
Volt age
∗ DC C ur rent G ain IC=-100µAVCE=-1V
h
C
FE
f
T
CBO
Tr ansition Fr eque nc y IC=-50mA VCE=-10V 50 MHz
Collector B as e
for B C161
for B C161 Gr. 6
for B C161 Gr. 10
for B C161 Gr. 16
=-100mA VCE=-1V
I
C
for B C161
for B C161 Gr. 6
for B C161 Gr. 10
for B C161 Gr. 16
=-1A VCE=-1V
I
C
for B C161
for B C161 Gr. 6
for B C161 Gr. 10
for B C161 Gr. 16
40
40
63
100
110
46
80
120
140
63
100
160
26
15
20
30
250
100
160
250
IE=0 VCB=-20V f=1MHz 15 30 pF
Capacit a nc e
C
EBO
Emitt er Base
IC=0 VCB= - 0. 5 V f = 1M Hz 180 pF
Capacit a nc e
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
Turn-on Time IC=-100mA IB1= -5 mA 500 ns
on
Turn-off Time IC=-100mA IB1=IB2= -5 mA 650 ns
off
V
V
V
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Collector-emitter SaturationVoltage. Base-emitterVoltage.
DCCurrent Gain. TransitionFrequency.
BC161
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BC161
TO-39 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
mm inch
o
(typ.)
I
H
4/5
DA
G
F
E
L
B
P008B
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BC161
Information furnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronics assumesno responsability for the
consequencesof use of such informationnor for anyinfringement of patents or otherrights ofthird parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent orpatent rightsof SGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor useascritical components in lifesupportdevicesor systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics- Printedin Italy - AllRights Reserved
Australia- Brazil - Canada - China- France - Germany- Italy -Japan - Korea - Malaysia- Malta- Morocco - The Netherlands-
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