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®
GENERAL PURPOSE TRANSISTOR
DESCRIPTION
The BC141-16 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
particularly designed for audio amplifiers and
switching application up to 1A.
The complementary PNP type is the BC161-16.
BC141-16
TO-39
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 1 A
I
C
Base Current 0.1 A
I
B
Total Dissipation at T
tot
at T
Storage Temperature -55 to 175
stg
Max. Operating Junction Temperature 175
T
j
≤ 25 oC
amb
≤ 25 oC
C
0.65
3.7
W
W
o
C
o
C
January 2003
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BC141-16
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
V
(BR)CBO
Collector Cut-off
Current (V
BE
= 0)
∗ Collector-Base
= 60 V
V
CE
V
= 60 V TC = 150 oC
CE
= 100 µA
I
C
100
100
100 V
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
I
= 30 mA 60 V
C
Breakdown Voltage
(I
= 0)
B
V
∗ Emitter-Base
(BR)EBO
= 100 µA
I
E
7V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter On
BE(on)
IC = 100 mA IB = 10 mA
I
= 500 mA IB = 50 mA
C
I
= 1 A IB = 100 mA
C
IC = 1 A VCE = 1 V 1.25 1.8 V
0.1
0.35
0.6 1
Voltage
∗ DC Current Gain
h
FE
f
C
CBO
Transition Frequency IC = 50 mA VCE = 10 V 50 MHz
T
Collector-Base
I
= 100 µA VCE = 1 V
C
I
= 100 mA VCE = 1 V
C
I
= 1 A VCE = 1 V
C
1009016030250
IE = 0 VCB = 5 V f = 1MHz 12 25 pF
Capacitance
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
Turn-on Time IC = 100 mA IB1 = 5 mA 250 ns
on
Turn-off Time IC = 100 mA IB1 = IB2 = 5 mA 850 ns
off
nA
µA
V
V
V
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Collector-emitter Saturation Voltage. Base-emitter Voltage.
DC Curent Gain. Transiition Frequency.
BC141-16
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BC141-16
TO-39 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
mm inch
o
(typ.)
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H
G
D A
I
E
F
L
B
P008B
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BC141-16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
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