Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
fpage
M3D070
BBY62
UHF variable capacitance double
diode
Product specification
Supersedes data of November 1993
1996 May 03
Page 2
Philips Semiconductors Product specification
UHF variable capacitance double diode BBY62
FEATURES
• Excellent linearity
• Small plastic SMD package
• C28:1.9 pF; ratio: 8.3.
APPLICATIONS
• Electronic tuning in UHF television
tuners
• VCO.
handbook, halfpage
43
21
4
3
1
2
DESCRIPTION
Top view
MAM172
The BBY62 is a variable capacitance
double diode, fabricated in planar
technology, and encapsulated in the
SOT143 small plastic SMD package.
The diodes are not electrically
Marking code: S4.
Fig.1 Simplified outline (SOT143), pin configuration and symbol.
connected to one another.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
−
30 V
− 20 mA
−55
−55
+150 °C
+125 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
reverse current VR= 28 V; see Fig.3 −−10 nA
V
= 28 V; Tj=85°C; see Fig.3 −−200 nA
R
diode series resistance f = 470 MHz; note 1 −−1.2 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 − 16.5 − pF
V
= 28 V; f = 1 MHz; see Figs 2 and 4 1.6 − 2pF
R
capacitance ratio f = 1 MHz − 8.3 −
Note
is the value at which Cd= 9 pF.
1. V
R
1996 May 03 2
Page 3
Philips Semiconductors Product specification
UHF variable capacitance double diode BBY62
GRAPHICAL DATA
20
handbook, full pagewidth
C
d
(pF)
16
12
8
4
0
−1
f =1 MHz; Tj=25°C.
10110
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBE874
2
10
o
T ( C)
j
MLC816
1000
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
Fig.3 Reverse current as a function of junction
temperature; maximum values.
1996 May 03 3
3
10
handbook, halfpage
TC
d
(K−1)
4
10
5
10
1
10
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
V (V)
R
MLC815
2
Page 4
Philips Semiconductors Product specification
UHF variable capacitance double diode BBY62
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
DEFINITIONS
10
max
3.0
0.150
30
max
0.090
0.1
max
max
o
o
10
0.88
0.75
0.60
o
1.1
max
2.8
1.9
43
1
2
0
0.1
TOP VIEW
0.48
1.7
0
0.1
B
A
1.4
1.2
M0.1 AB
2.5
max
0.2
MBC845
M
AB
Fig.5 SOT143.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03 4
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