Page 1
BB 914
Silicon Variable Capacitance Diode
• For FM radio tuner with extended frequency band
• High tuning ratio low supply voltage (car radio)
• Monolitic chip (common cathode) for perfect
dual diode tracking
• Good linearity of C-V curve
• High figure of merit
Type Marking Ordering Code Pin Configuration Package
BB 914 SMs Q62702-B673 1 = A1 2 = A2 3=C1/2 SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Peak reverse voltage
Forward current,
T
≤ 60°C
A
Operating temperature range
Storage temperature
V
V
I
T
T
F
R
RM
op
stg
18 V
20
50 mA
- 55 ... + 125 °C
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
≤
600 K/W
Semiconductor Group 1 Oct-10-1996
Page 2
BB 914
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 16 V,
R
V
= 16 V,
R
T
= 25 °C
A
T
= 60 °C
A
I
R
-
-
-
-
20
200
nA
AC characteristics
Diode capacitance
V
= 2 V, f = 1 MHz
R
V
= 8 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V,
R
V
= 8 V, f = 1 MHz
R
Capacitance matching 2)
V
= 2 V,
R
V
= 8 V, f = 1 MHz
R
C
C
∆
T
T2
C
pF
42.5
17.6
/
C
T8
43.75
18.7
45
19.75
-
2.28 2.34 2.42
/
C
T
T
%
- - 1.5
Series resistance
C
= 38 pF, f = 100 MHz
T
r
s
Ω
- 0.28 -
Semiconductor Group 2 Oct-10-1996
Page 3
BB 914
Diode capacitance per diode
C
= f(
V
100
pF
80
70
60
50
40
30
20
10
)
R
T
f
= 1MHz
C
T
Capacitance ratio
V
= Parameter, f = 1MHz
ref
5.0
-
4.0
C
/
C
Tref
T
3.5
3.0
2.5
2.0
1.5
1.0
0.5
C
/
C
= f(
V
Tref
T
)
R
1V
2V
3V
0
0 1 2 3 4 5 6 7 8 V 10
V
R
Package
0.0
0 1 2 3 4 5 6 7 8 V 10
V
R
Semiconductor Group 3 Oct-10-1996
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