Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D051
BB910
VHF variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Page 2
Philips Semiconductors Product specification
VHF variable capacitance diode BB910
FEATURES
• Excellent linearity
• Matched to 2.5%
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C28: 2.5; ratio: 16
• Low series resistance.
Cathode side indicated by a red band on a black body.
Additional green band.
handbook, halfpage
k
a
MAM234
APPLICATIONS
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
• VCO.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
The BB910 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+100 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- C
d28V()
reverse current VR= 28 V; see Fig.3 −−
= 28 V; Tj=85°C; see Fig.3 −−200 nA
V
R
10
nA
diode series resistance f = 100 MHz; note 1 −−1Ω
diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
= 28 V; f = 1 MHz; see Figs 2 and 4 2.3 − 2.7 pF
R
38
−−
pF
capacitance ratio f = 1 MHz 14 −−
C
∆
----------
C
d
d
capacitance matching VR= 0.5 to 28 V −−2.5 %
Note
is the value at which Cd= 40 pF.
1. V
R
1996 May 03 2
Page 3
Philips Semiconductors Product specification
VHF variable capacitance diode BB910
GRAPHICAL DATA
50
handbook, full pagewidth
C
d
(pF)
40
30
20
10
0
−1
f =1 MHz; Tj=25°C.
10110
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBE875
2
10
o
T ( C)
j
MLC816
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
Fig.3 Reverse current as a function of junction
temperature; maximum values.
V (V)
R
MLC815
2
3
10
handbook, halfpage
TC
d
(K−1)
4
10
5
10
1
1000
10
Tj = 0 to 85 °C.
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1996 May 03 3
Page 4
Philips Semiconductors Product specification
VHF variable capacitance diode BB910
PACKAGE OUTLINE
(1) (2)
0.55
max
1.6
max
Dimensions in mm.
(1) Cathode side indicated by a red band on a black body.
(2) Additional green band.
25.4 min 25.4 min
3.04
max
MBC040
Fig.5 SOD68 (DO-34).
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03 4
Loading...