Datasheet BB804, BB804W, BB804R, BB804G Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 May 03

1998 Nov 25

DISCRETE SEMICONDUCTORS

BB804

VHF variable capacitance double
diode

fpage

M3D088

1998 Nov 25 2

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

FEATURES

• Selected capacitance range

• Small plastic SMD package

• C8: 26 pF; ratio: 1.7

• Low series resistance.

APPLICATIONS

• Electronic tuning in FM radio
applications.

DESCRIPTION

The BB804 is a variable capacitance
double diode with a common cathode,
fabricated in planar technology, and
encapsulated in the SOT23 small
plastic SMD package.

MARKING

TYPE NUMBER CODE

BB804 SF5
BB804W SF2

PINNING

PIN DESCRIPTION

1 anode (a

1

)

2 anode (a

2

)

3 common cathode

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

21

3

MAM169

21

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

Per diode

V

R

continuous reverse voltage

−

18 V

I

F

continuous forward current −

50 mA

T

stg

storage temperature

−55

+150 °C

T

j

operating junction temperature

−55

+125 °C

1998 Nov 25 3

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

Note

1. V

R

is the value at which Cd= 38 pF.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per diode

I

R

reverse current VR= 16 V; see Fig.3 −−

20

nA

V

R

= 16 V; Tj=60°C; see Fig.3 −−

200

nA

r

s

diode series resistance f = 100 MHz; note 1 − 0.2 −Ω

C

d

diode capacitance VR= 2 V; f = 1 MHz; see Figs 2 and 4

42

−

46.5 pF

V

R

= 2 V; f = 1 MHz; white 2; see Figs 2 and 4

44

−

45.5 pF

capacitance ratio f = 1 MHz 1.65 − 1.75

C

d2V()

C

d8V()

------------------

1998 Nov 25 4

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

GRAPHICAL DATA

Fig.2 Diode capacitance as a function of reverse voltage; typical values.

f =1 MHz; T

amb

=25°C.

handbook, full pagewidth

75

(pF)

25

0

10

MGC815

1

VR (V)

10

−1

50

C

d

Fig.3 Reverse current as a function of junction

temperature; maximum values.

handbook, halfpage

1000

10

MGC810

10

2

10

(nA)

I

R

3

20 40 60 80

Tj (

o

C)

Fig.4 Temperature coefficient of diode

capacitance as a function of reverse
voltage; typical values.

handbook, halfpage

MLC815

11010

2

10

3

10

4

10

5

10

1

(K−1)

V (V)

R

d

TC

1998 Nov 25 5

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

PACKAGE OUTLINE

UNIT

A

1

max.

b

p

cD

E

e

1

H

E

L

p

Qwv

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

e

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

b

p

D

e

1

e

A

A

1

L

p

Q

detail X

H

E

E

w M

v M

A

B

AB

0 1 2 mm

scale

A

1.1

0.9

c

X

12

3

Plastic surface mounted package; 3 leads SOT23

1998 Nov 25 6

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Nov 25 7

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

NOTES

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© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands 115104/00/02/pp8 Date of release: 1998 Nov 25 Document order number: 9397 75004717