Page 1
BB 619C
Silicon Variable Capacitance Diode
• For tuning of extended frequency band
in VHF TV/ VTR tuners
Type Marking Ordering Code Pin Configuration Package
BB 619C yellow S Q62702-B683 1 = C 2 = A SOD-123
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)
Forward current
Operating temperature range
Storage temperature
V
V
I
T
T
F
R
RM
op
stg
30 V
35
20 mA
- 55 ... + 125 °C
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
≤ 450 K/W
Semiconductor Group 1 Jan-08-1997
Page 2
BB 619C
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 30 V,
R
V
= 30 V,
R
T
= 25 °C
A
T
= 85 °C
A
I
R
-
-
-
-
10
200
nA
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V,
R
V
= 25 V, f = 1 MHz
R
C
C
T
T2
pF
36
27
2.5
2.4
/
C
T25
39
30.2
2.72
2.55
42
33.2
3.05
2.8
-
9.5 11.1 -
Capacitance ratio
V
= 1 V,
R
V
= 28 V, f = 1 MHz
R
Capacitance matching
V
= 28 V, f = 1 MHz
R
Series resistance
V
= 5 V, f = 470 MHz
R
Series inductance
C
∆
r
L
/
C
T1
T28
13.5 15.3 -
C
/
C
T
T
%
- - 2.5
s
Ω
- 0.6 -
s
- 2.5 - nH
Semiconductor Group 2 Jan-08-1997
Page 3
BB 619C
Diode capacitance
f
= 1MHz
40
pF
C
T
30
25
20
15
10
5
CT = f (V
)
R
Temperature coefficient of the diode
capacitance
f
= 1MHz
-1
10
1/°C
T
Cc
-2
10
-3
10
-4
10
T
= f (
V
Cc
)
R
0
0 5 10 15 20 V 30
Reverse current
V
= 28V
R
3
10
pA
I
R
2
10
1
10
0
10
I
= f (
R
-5
10
0
V
R
T
)
A
85°C
25°C
Reverse current
T
A
I
R
10
I
= f (
R
= Parameter
3
10
pA
2
10
1
10
10
V
1
)
R
V
V
R
10
-1
10
0
10
1
V
V
R
0
10
-30 -10 10 30 50 70 °C 100
T
A
Semiconductor Group 3 Jan-08-1997
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