Datasheet BB555 Datasheet (Siemens)

BB 555

Semiconductor Group

Jul-28-19981

Silicon Tuning Diode

• For UHF-TV-tuners

• High capacitance ratio

• Low series inductance

• Low series resistance

• Extremely small plastic SMD package

• Excellent uniformity and matching due to

"in-line" matching assembly procedure

1

VES05991

2

Type Marking Ordering Code Pin Configuration Package

BB 555
BB 555

B
B

Q62702-B0864 unmatched
Q62702-B0853 inline matched

1 = C 2 = A SCD-80

Maximum Ratings
Parameter

Symbol Value Unit

Diode reverse voltage

V

R

30 V

Peak reverse voltage (R ≥ 5kΩ)

V

RM

35

Forward current

I

F

20 mA

Operating temperature range

T

op

55 ...+150 °C

Storage temperature

T

st

g

55 ...+150

Semiconductor Group 1 1998-11-01

BB 555

Semiconductor Group

Jul-28-19982

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC characteristics

Reverse current

V

R

= 30 V

I

R

- - 10 nA

Reverse current

V

R

= 30 V,

T

A

= 85 °C

I

R

- - 200

AC characteristics

Diode capacitance

V

R

= 1 V, f = 1 MHz

V

R

= 2 V, f = 1 MHz

V

R

= 25 V, f = 1 MHz

V

R

= 28 V, f = 1 MHz

C

T

17.5

14.1

2.05

1.9

18.7
15

2.24

2.1

20

16.1

2.4

2.3

pF

Capacitance ratio

V

R

= 2 V,

V

R

= 25 V, f = 1 MHz

C

T2

/

C

T25

6 6.7 7.5 -

Capacitance ratio

V

R

= 1 V,

V

R

= 28 V, f = 1 MHz

C

T1

/

C

T28

8.2 8.9 9.8

Capacitance matching 1)

V

R

= 1V to 28V , f = 1 MHz, 4 diodes sequence

V

R

= 1V to 28V , f = 1 MHz, 7 diodes sequence

∆

C

T

/

C

T

-

-

0.15

0.25

1

2

Series resistance

V

R

= 3 V, f = 470 MHz

r

s

- 0.58 -

Ω

Series inductance

L

s

- 0.6 - nH

1) In-line matching. For details please refer to Application Note 047

Semiconductor Group 2 1998-11-01

BB 555

Semiconductor Group

Jul-28-19983

Diode capacitance

CT = f (V

R

)

f

= 1MHz

0 5 10 15 20

V

30

V

R

0

2

4

6

8

10

12

14

16

pF

20

C

T

Temperature coefficient of the diode
capacitance

T

Cc

= f (

V

R

)

10

0

10

1

10

2

V

V

R

-5

10

-4

10

-3

10

1/°C

T

Cc

Reverse current

I

R

= f (

T

A

)

V

R

= 28V

-30 -10 10 30 50 70

°C

100

T

A

0

10

1

10

2

10

3

10

pA

I

R

Reverse current

I

R

= f (

V

R

)

T

A

= Parameter

10

0

10

1

10

2

V

V

R

-1

10

0

10

1

10

2

10

3

10

pA

I

R

25°C

85°C

Semiconductor Group 3 1998-11-01

BB 555

Semiconductor Group

Jul-28-19984

Normalized diode capacitance

C

(TA)

/

C

(25°C)

= f (

T

A

)

f

= 1MHz,

V

R

= Parameter

-30 -10 10 30 50 70

°C

110

T

A

0.96

0.98

1.00

1.02

-

1.06

C

TA

/

C

25

1V
2V

25V

Semiconductor Group 4 1998-11-01