Datasheet BB503M Datasheet (HIT)

BB503M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.8 dB typ. at f = 900 MHz

• High gain; PG = 22 dB typ. at f = 900 MHz

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4(SOT-143mod)

ADE-208-811B(Z)

3rd. Edition

Jul. 1999

Outline

Notes: 1. Marking is “CS–”.

2. BB503M is individual type number of HITACHI BBFET.

MPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

BB503M

G

G1S

G2S

S

G2S

S

G1S

S

G

S

G

G2S

S

G

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate1 to source voltage V

Gate2 to source voltage V

Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage Gate1 to source breakdown

V

(BR)G1SS

voltage Gate2 to source breakdown

V

(BR)G2SS

voltage Gate1 to source cutoff current I

Gate2 to source cutoff current I

Gate1 to source cutoff voltage V

Gate2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

D(op)

Forward transfer admittance |yfs| 192429mSV

Input capacitance c Output capacitance c Reverse transfer capacitance c

iss

oss

rss

Power gain PG 17 22 — dB V

Noise figure NF — 1.8 2.4 dB f = 900MHz

6 ——V I

+6——V I

— — +100 nA V

0.5 0.7 1.0 V V

7 1013mAV

1.4 1.7 2.0 pF VDS = 5V, VG1 = 5V

0.7 1.1 1.5 pF V — 0.025 0.05 pF f = 1MHz

6V +6

V

–0 +6

V

–0 20 mA

= 200µA

D

V

= V

G1S

= +10µA

1

V

G2S

= +10µA

2

V

G1S

= 0

G2S

= VDS = 0

= VDS = 0 = +5V

V

= VDS = 0

G2S

= +5V

V

= VDS = 0

G1S

= 5V, V

D

I

= 100µA

D

= 5V, V

D

I

= 100µA

D

= 5V, V

D

V

= 4V, RG = 47kΩ

G2S

= 5V, V

D

V

=4V

R

= 47kΩ, f = 1kHz

G

=4V, RG = 47kΩ

G2S

= 5V, V

D

V

=4V, RG = 47kΩ

G2S

= 4V

= 5V

1

= 5V

1

= 5V

1

2

Main Characteristics

BB503M

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

G2 V

Gate 2

Drain

A

I

D

D(op)

Gate 1

Source

R

G

G1

Application Circuit

V = 4 to 0.3 V

AGC

BBFET

V = 5 V

DS

RFC

Output

Input

R

G

V = 5 V

GG

3

BB503M

900MHz Power Gain, Noise Test Circuit

Input (50Ω)

V

R1

L1

C1, C2

C4 to C6

V

G2

G1

C5C4

R2

C3

G2

G1

L2

:

Variable Capacitor (10pF MAX)

:

Disk Capacitor (1000pF)

C3

:

Air Capacitor (1000pF)

:

47 kΩ

R1

:

47 kΩ

R2

:

4.7 kΩ

R3

V

R3

D

S

D

C6

RFC

Output (50Ω)

L4

L3

C2C1

L1:

L2:

10

26

8

10

3

(φ1mm Copper wire)

3

Unit: mm

21

L3:

L4:

29

7

10

18

10

RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm

4

BB503M

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

20

Typical Output Characteristics

V = 4 V

G2S

V = V

G1 DS

16

D

12

8

Drain Current I (mA)

4

0

12345

Drain to Source Voltage V (V)

G

R = 22 k

Ω

33 k

Ω

47 k

68 k

100 k

DS

Ω

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

R = 33 kΩ

G

16

D

12

8

4

Drain Current I (mA)

0

12345

Gate1 Voltage V (V)

2 V

4 V

V = 1 V

G2S

G1

3 V

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

R = 47 kΩ

G

16

D

12

8

Drain Current I (mA)

4

0

12345

Gate1 Voltage V (V)

2 V

4 V

V = 1 V

G2S

G1

3 V

5

BB503M

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

R = 68 kΩ

G

16

D

12

8

4

Drain Current I (mA)

0

12345

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

R = 47 kΩ

24

G

f = 1 kHz

fs

G1

4 V

2 V

3 V

V = 1 V

G2S

3 V

Forward Transfer Admittance

vs. Gate1 Voltage

30

fs

24

V = 5 V

DS

R = 33 kΩ

G

f = 1 kHz

4 V

3 V

18

12

2 V

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

G2S

G1

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

R = 68 kΩ

fs

24

G

f = 1 kHz

4 V

3 V

18

2 V

12

6

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

6

V = 1 V

G2S

G1

18

12

2 V

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

G2S

G1

BB503M

Power Gain vs. Gate Resistance

30

25

20

15

V = V = 5 V

10

5

0

10

V = 4 V f = 900 MHz

Power Gain PG (dB)

G1

DS G2S

20 50

Gate Resistance R (k Ω )

Power Gain vs. Drain Current Noise Figure vs. Drain Current

30

25

20

G

100

Noise Figure vs. Gate Resistance

4

V = V = 5 V V = 4 V f = 900 MHz

3

DS G2S

G1

2

1

Noise Figure NF (dB)

0 10

20 50

Gate Resistance R (k Ω )

4

V = V = 5 V V = 4 V R = variable

3

f = 900 MHz

DS G2S G

G1

100

G

15

V = V = 5 V

10

Power Gain PG (dB)

V = 4 V R = variable

5

f = 900 MHz

0

G1

DS G2S G

5101520

Drain Current I (mA)

2

1

Noise Figure NF (dB)

0

D

5

Drain Current I (mA)

10

15 20

D

7

BB503M

20

Drain Current vs. Gate Resistance

Power Gain vs.

Gate2 to Source Voltage

25

15

D

10

V = V = 5 V

5

0

10

V = 4 V

Drain Current I (mA)

G1

DS G2S

20 50

Gate Resistance R (k Ω )

Noise Figure vs.

Gate2 to Source Voltage

5

4

G

V = 5 V

DS

R = 47 kΩ

G

f = 900 MHz

100

20

15

10

Power Gain PG (dB)

5

0

1

23

Gate2 to Source Voltage V (V)

Input Capacitance vs.

Gate2 to Source Voltage

4

3

V = 5 V

DS

R = 47 kΩ

G

f = 900 MHz

G2S

4

3

2

Noise Figure NF (dB)

1

Gate2 to Source Voltage V (V)

8

23

G2S

2

1

V = 5 V

DS

R = 47 kΩ

Input Capacitance Ciss (pF)

4

G

f = 1 MHz

0

1

Gate2 to Source Voltage V (V)

2

34

G2S

Gain Reduction vs.

0

10

20

30

Gain Reduction GR (dB)

40

Gate2 to Source Voltage

V = V = 5 V

DS

V = 4 V

G2S

R = 47 kΩ

G

G1

BB503M

50

4

Gate2 to Source Voltage V (V)

3

2

10

G2S

9

BB503M

S11 Parameter vs. Frequency

.8

.6

.4

.2

0

–.2

.2

–.4

Test Condition:

.6

.4

.8

–.6

–.8

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

120°

150°

180°

–150°

–120°

Test Condition:

50 to 1000 MHz (50 MHz step)

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

1

–1

90°

–90°

1.5

234

1

–1.5

G1

G

Ω

Scale: 0.002 / div.

G1

G

Ω

60°

–60°

S21 Parameter vs. Frequency

Scale: 1 / div.

90°

2

3

4

5

10

5

–10

–5

–4

–3

–2

150°

180°

–150°

Test Condition:

Ω

120°

–120°

–90°

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

Ω

G1

–60°

G

60°

30°

0°

–30°

Ω

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

.8

.6

.4

30°

0°

–30°

Ω

.2

0

–.2

.2

–.4

–.6

Test Condition:

.6

.4

.8

–.8

–1

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

50 to 1000 MHz (50 MHz step)

1.5 2

3

4

5

10

1.5

234

1

–1.5

G1

G

Ω

10

5

–10

–5

–4

–3

–2

Ω

10

BB503M

Sparameter (VDS = VG1 = 5V, V

S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.975 –2.6 2.37 176.1 0.00097 74.4 0.995 –1.9 100 0.977 –6.5 2.37 172.1 0.00162 89.8 0.998 –3.9 150 0.975 –9.1 2.36 168.0 0.00222 78.2 0.997 –5.8 200 0.972 –12.4 2.33 163.8 0.00282 83.8 0.996 –8.0 250 0.968 –15.6 2.32 159.9 0.00388 81.1 0.994 –10.0 300 0.963 –18.9 2.30 156.0 0.00437 76.0 0.993 –11.8 350 0.954 –22.2 2.28 151.8 0.00518 73.6 0.991 –13.9 400 0.946 –25.3 2.25 148.2 0.00567 75.6 0.989 –15.8 450 0.937 –28.2 2.22 144.1 0.00631 72.5 0.986 –17.8 500 0.930 –31.5 2.19 140.2 0.00637 72.7 0.984 –19.6 550 0.920 –34.7 2.16 136.3 0.00720 70.3 0.981 –21.6 600 0.914 –37.4 2.13 132.7 0.00747 67.0 0.978 –23.4 650 0.902 –40.4 2.09 129.3 0.00738 69.2 0.975 –25.4 700 0.886 –43.5 2.07 125.4 0.00758 68.6 0.972 –27.3 750 0.879 –46.1 2.03 122.0 0.00757 66.0 0.968 –29.0 800 0.873 –48.9 1.99 118.3 0.00729 67.5 0.966 –31.0 850 0.857 –52.0 1.96 114.9 0.00723 68.8 0.962 –32.9 900 0.845 –54.5 1.93 111.4 0.00706 68.3 0.959 –34.8 950 0.838 –57.2 1.90 108.1 0.00659 67.5 0.954 –36.6 1000 0.824 –59.6 1.86 104.9 0.00574 71.0 0.952 –38.5

= 4V, RG = 47kΩ, Zo = 50Ω)

G2S

11

BB503M

Package Dimensions

2.95

1.9

0.95 0.95

3

0.4

+ 0.1 — 0.05

±0.2

Unit: mm

+ 0.1

— 0.3

+ 0.1

0.4

— 0.05

0.65

2

0.16

+ 0.1 — 0.06

0.4

+ 0.1 — 0.05

+ 0.2

— 0.6

1.5

2.8

4

0.95

1

0.85

0.6

+ 0.1 — 0.05

+ 0.1

0.65

— 0.3

0—0.1

1.8

0.3

+ 0.2

— 0.1

1.1

Hitachi Code

EIAJ

MPAK—4

SC—61AA

JEDEC

12

BB503M

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223

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Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00

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