Page 1
BB 439
Silicon Variable Capacitance Diode BB 439
Preliminary Data
● For VHF tuned circuit applications
● High figure of merit
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BB 439 Q62702-B577white 2 SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 28 V
Peak reverse voltage VRM 30
Forward current IF 20 mA
Operating temperature range T
Storage temperature range T
op – 55 … + 125 ˚C
stg – 55 … + 150
Thermal Resistance
Junction - ambient R
th JA ≤ 450 K/W
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
07.94
Page 2
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BB 439
Parameter Symbol
Reverse current
R = 28 V
V
R = 28 V, TA = 60 ˚C
V
Diode capacitance, f = 1 MHz
R = 3 V
V
R = 25 V
V
Capacitance ratio, f = 1 MHz
R = 3 V, 25 V
V
Capacitance matching
R = 3 V … 25 V, f = 1 MHz
V
Series resistance
f= 100 MHz, C
T = 12 pF
Figure of merit
f = 50 MHz, V
f = 200 MHz, V
R = 3 V
R = 25 V
R nA
I
T pF
C
C
T3 / CT25 –5 – 6.5
∆CT / CT ––3
r
s – 0.35 0.5 Ω
Q –
min. typ.
–
–
26
4.3
–
–
–
–
–
–
280
600
UnitValues
max.
20
200
32
6
%
–
–
Diode capacitance CT = f (VR)
f= 1 MHz
Semiconductor Group 2
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