Datasheet BB404M Datasheet (HIT)

BB404M

Build in Biasing Circuit MOS FET IC

UHF/VHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• High gain;

(PG = 29 dB typ. at f = 200 MHz)

• Low noise characteristics;

(NF = 1.2 dB typ. at f = 200 MHz)

• Wide supply voltage range;

Applicable with 5V to 9V supply voltage.

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4R(SOT-143 var.)

ADE-208-717A (Z)

2nd. Edition

Dec. 1998

Outline

Notes: 1. Marking is “DX–”.

2. BB404M is individual type number of HITACHI BBFET.

MPAK-4R

3

4

2

1

1. Source

2. Drain

3. Gate2

4. Gate1

BB404M

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate1 to source voltage V

Gate2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate1 to source breakdown voltage V
Gate2 to source breakdown voltage V
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
Drain current I

(BR)DSS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

G1S(off)

G2S(off)

iss

oss

rss

D(op)

I

D(op)

Forward transfer admittance |yfs|1 22 27 34 mS VDS = 5V, VG1 = 5V, V

|yfs|2 — 27 — mS VDS = 9V, VG1 = 9V, V

Power gain PG1 24 29 32 dB VDS = 5V, VG1 = 5V, V

PG2 — 29 — dB VDS = 9V, VG1 = 9V, V

Noise figure NF1 — 1.2 1.9 dB VDS = 5V, VG1 = 5V, V

NF2 — 1.2 — dB VDS = 9V, VG1 = 9V, V

12——V I
+10 — — V IG1 = +10µA, V
±10——V IG2 = ±10µA, V
— — +100 nA V
——±100 nA V

0.4 0.7 1.0 V VDS = 5V, V

0.5 0.7 1.0 V VDS = 5V, V

2.3 2.8 3.6 pF VDS = 5V, VG1 = 5V

0.9 1.3 2.0 pF V

0.003 0.02 0.05 pF f = 1MHz

1 9 15 19 mA VDS = 5V, VG1 = 5V

2 — 13 — mA VDS = 9V, VG1 = 9V

12 V
±10

V

– 0
Å}10 V
25 mA

= 200µA, V

D

= +9V, V

G1S

= ±9V, V

G2S

=4V, RG = 180kΩ

G2S

V

= 4V, RG = 180kΩ

G2S

V

=6V, RG = 470kΩ

G2S

R

= 180kΩ, f = 1kHz

G

R

= 470kΩ, f = 1kHz

G

R

= 180kΩ, f = 200MHz

G

R

= 470kΩ, f = 200MHz

G

R

= 180kΩ, f = 200MHz

G

R

= 470kΩ, f = 200MHz

G

= V

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= 4V, ID = 100µA

G2S

= 5V, ID = 100µA

G1S

G2S

G2S

G2S

G2S

G2S

G2S

G2S

= 0

=4V

=6V

=4V

=6V

=4V

=6V

2

Main Characteristics

BB404M

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

1000p

G1

V

T

R

G

Gate 1

Source

Power Gain, Noise Figure Test Circuit

V

G2

1000p

D(op)

Gate 2

V

G2

Drain

A

I

D

V

T

1000p

Input (50Ω)

1000p

36p

BBFET

L2

180k (VD=5V)
470k (VD=9V)

1000p

47k

R

G

1000p

47k

L1

1SV70

L1 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

.

1000p

V = V

1000p

RFC

D G1

47k

10p max

1SV70

Unit Resistance (Ω)
Capacitance (F)

Output (50Ω)

3

BB404M

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

25

Typical Output Characteristics

V = 6 V

G2S

V = V

G1 DS

20

D

15

10

Drain Current I (mA)

5

0

246810

Drain to Source Voltage V (V)

Ω

270 k

330 k

390 k

470 k

560 k

680 k

820 k

1M

R = 1.5 M

G

DS

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Drain Current vs.

Gate2 to Source Voltage

25

V = V = 9 V

DS

G1

20

D

15

10

Drain Current I (mA)

5

0

1.2 2.4 3.8 4.8 6.0

Gate2 to Source Voltage V (V)

270 k

330 k

390 k

470 k

560 k

680 k

820 k

1M

R = 1.5 M

G

G2S

Drain Current vs. Gate1 Voltage

25

V = 9 V

Ω

DS

R = 390 k

G

Ω

20

Ω

D

Ω

15

6 V
5 V
4 V

Ω

Ω

10

Ω

Ω

Ω

Ω

5

Drain Current I (mA)

0

246810
Gate1 Voltage V (V)

V = 1 V

G1

3 V
2 V

G2S

4

BB404M

Drain Current vs. Gate1 Voltege

25

V = 9 V

DS

R = 470 k

20

D

15

G

Ω

10

5

Drain Current I (mA)

0

246810

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 9 V

DS

fs

24

R = 390 k

G

f = 1 kHz

Ω

4 V

18

6 V
5 V
4 V

V = 1 V

G1

6 V

5 V

G2S

2 V

3 V
2 V

3 V

Drain Current vs. Gate1 Voltege

25

V = 9 V

DS

20

D

15

R = 560 k

G

Ω

10

5

Drain Current I (mA)

0

246810

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 9 V

DS

fs

24

R = 470 k

G

f = 1 kHz

Ω

4 V

18

6 V
5 V
4 V

3 V

5 V

V = 1 V

G2S

G1

6 V

2 V

3 V

2 V

12

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

246810

Gate1 Voltage V (V)

G2S

G1

12

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

246810

Gate1 Voltage V (V)

G2S

G1

5

BB404M

30

fs

24

Forward Transfer Admittance

vs. Gate1 Voltage

V = 9 V

DS

R = 560 k

G

6 V

Ω

5 V

f = 1 kHz

Power Gain vs. Gate Resistance

40

4 V

35

18

2 V

12

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

246810
Gate1 Voltage V (V)

G2S

G1

Noise Figure vs. Gate Resistance

4

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

3

f = 200 MHz

3 V

30

25

20

V = 9 V

15

10

DS

V = 9 V

G1

V = 6 V

G2S

f = 200 MHz

Power Gain PG (dB)

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M Ω )

G

Power Gain vs. Drain Current

40

35

30

2

Noise Figure NF (dB)

1

0

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M )G Ω

25

V = 9 V

20

Power Gain PG (dB)

15

DS

V = 9 V

G1

V = 6 V

G2S

R = variable

G

f = 200 MHz

10

0

510152025

Drain Current I (mA)

30

D

6

BB404M

Noise Figure vs. Drain Current

4

3

2

1

Noise Figure NF (dB)

0

510152025

Drain Current I (mA)

Gain Reduction vs.

Gate2 to Source Voltage

60

50

40

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

R = variable

G

f = 200 MHz

D

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

R = 470 k

G

f = 200 MHz

Drain Current vs. Gate Resistance

30

25

20

D

15

10

V = 9 V

Drain Current I (mA)

30

DS

5

V = 9 V

G1

V = 6 V

G2S

0

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M )

Ω

G

Input Capacitance vs.

Gate2 to Source Voltage

6

5

Ω

4

30

20

Gain Reduction GR (dB)

10

0

12345

Gate2 to Source Voltage V (V)

3

2

V = 9 V

DS

V = 9 V

1

Input Capacitance Ciss (pF)

G1

R = 470 k

G

Ω

f = 1 MHz

0

67 6

G2S

1234

Gate2 to Source Voltage V (V)

5

G2S

7

BB404M

.2

0

–.2

–.4

Test Condition :

150°

180°

–150°

Test Condition :

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

.6

.4

.8

–.6

–.8

–1

V = 9 V , V = 9 V

DS

V = 6 V , R = 470 k

G2S

1.5

1.5

234

1

–1.5

G1

G

50—1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

Scale: 0.002 / div.

90°

120°

–120°

–90°

V = 9 V , V = 9 V

DS

V = 6 V , R = 470 k

G2S

50—1000 MHz (50 MHz step)

60°

–60°

G1

G

S21 Parameter vs. Frequency

Scale: 1 / div.

90°

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

150°

180°

–150°

Ω

120°

–120°

Test Condition :

–90°

V = 9 V , V = 9 V

DS

V = 6 V , R = 470 k

G2S

60°

–60°

G1

30°

0°

–30°

G

Ω

50—1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

30°

–30°

Ω

.8

.6

.4

.2

0°

0

–.2

.2

–.4

Test Condition :

.6

.4

.8

–.6

–.8

–1

V = 9 V , V = 9 V

DS

V = 6 V , R = 470 k

G2S

50—1000 MHz (50 MHz step)

1.5
2

3

4

5

10

1.5

234

1

–1.5

G1

10

5

–10

–5

–4

–3

–2

G

Ω

8

BB404M

Sparameter (VDS = VG1 = 9V, V

S11 S21 S12 S22
f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
50 0.996 –5.3 2.74 174.0 0.00096 98.6 0.985 –1.9
100 0.993 –10.9 2.73 168.0 0.00130 84.4 0.991 –4.5
150 0.987 –16.6 2.68 162.3 0.00203 83.6 0.990 –6.5
200 0.978 –21.9 2.66 156.3 0.00285 72.3 0.988 –9.4
250 0.972 –27.4 2.63 150.4 0.00335 69.7 0.985 –11.6
300 0.954 –33.2 2.57 144.3 0.00385 68.3 0.982 –14.0
350 0.943 –38.2 2.50 138.7 0.00455 63.2 0.979 –16.2
400 0.925 –43.2 2.43 133.3 0.00488 55.4 0.975 –18.4
450 0.910 –48.0 2.37 128.0 0.00526 59.8 0.971 –21.0
500 0.893 –52.5 2.30 122.6 0.00522 56.1 0.967 –23.0
550 0.880 –57.4 2.24 117.5 0.00498 53.2 0.962 –25.2
600 0.861 –62.1 2.17 112.7 0.00512 49.1 0.957 –27.3
650 0.847 –66.1 2.10 108.1 0.00497 53.4 0.952 –29.4
700 0.829 –69.9 2.02 103.6 0.00455 53.6 0.947 –31.6
750 0.816 –74.1 1.96 99.1 0.00418 51.6 0.943 –33.7
800 0.804 –78.2 1.91 94.8 0.00372 55.7 0.937 –35.8
850 0.791 –82.4 1.85 80.4 0.00329 62.4 0.933 –38.0
900 0.779 –86.1 1.79 86.3 0.00275 73.0 0.928 –40.0
950 0.764 –89.5 1.73 82.2 0.00233 82.4 0.921 –42.1
1000 0.753 –92.4 1.68 78.3 0.00258 105.1 0.918 –44.2

= 6V, RG = 470kΩ, Zo = 50Ω)

G2S

9

BB404M

Package Dimensions

2.95

0.95 0.95

4

0.4

+ 0.1
— 0.05

1.9

±0.2

±0.2

Unit: mm

± 0.1

+ 0.1

0.4

— 0.05

0.65

3

0.16

+ 0.1
— 0.06

0.6

+ 0.1
— 0.05

± 0.2

± 0.15

2.8

1.5

1.8

2

0.95

0.4

+ 0.1
— 0.05

± 0.1

0.65

1

0.85

0 0.1

0.8

± 0.1

1.1

Hitachi Code

EIAJ

MPAK—4R

JEDEC

10

BB404M

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,

trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact

Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for

maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

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For further information write to:

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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

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11