Datasheet BB402M Datasheet (HIT)

BB402M

Build in Biasing Circuit MOS FET IC

VHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics;

(NF = 1.7 dB typ. at f = 200 MHz)

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4R(SOT-143 var.)

ADE-208-716A (Z)

2nd. Edition

Dec. 1998

Outline

Notes: 1. Marking is “BX–”.

2. BB402M is individual type number of HITACHI BBFET.

MPAK-4R

3

4

2

1

1. Source

2. Drain

3. Gate2

4. Gate1

BB402M

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate1 to source voltage V

Gate2 to source voltage V Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate1 to source breakdown voltage V Gate2 to source breakdown voltage V Gate1 to source cutoff current I Gate2 to source cutoff current I Gate1 to source cutoff voltage V Gate2 to source cutoff voltage V Drain current I

(BR)DSS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

G1S(off)

G2S(off)

D(op)

Forward transfer admittance |yfs| 1520—mSVDS = 9V, VG1 = 9V, V

Input capacitance c Output capacitance c Reverse transfer capacitance c

iss

oss

rss

Power gain PG 22 26 — dB VDS = 9V, VG1 = 9V, V Noise figure NF — 1.7 2.2 dB RG = 120kΩ, f = 200MHz

12——V I +10 — — V IG1 = +10µA, V ±10——V IG2 = ±10µA, V — — +100 nA V ——±100 nA V

0.4 0.7 1.0 V VDS = 9V, V

0.4 0.7 1.0 V VDS = 9V, V 9 1318mAVDS = 9V, VG1 = 9V, V

2.2 3.0 4.0 pF VDS = 9V, VG1 = 9V

0.8 1.1 1.5 pF V — 0.017 0.04 pF f = 1MHz

12 V +10

V

– 0 ±10 V 25 mA

= 200µA, V

D

= +9V, V

G1S

= ±9V, V

G2S

R

= 120kΩ

G

R

= 120kΩ, f = 1kHz

G

=6V, RG = 120kΩ

G2S

= V

G1S

G2S

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= 6V, ID = 100µA

G2S

= 9V, ID = 100µA

G1S

G2S

= 0

= 6V

=6V

2

Main Characteristics

BB402M

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

1000p

G1

V

T

R

G

Gate 1

Source

Power Gain, Noise Figure Test Circuit

V

G2

1000p

D(op)

Gate 2

V

G2

Drain

A

I

D

V

T

1000p

Input (50Ω)

1000p

36p

BBFET

L2

120k

1000p

47k

R

G

1000p

47k

L1

1SV70

L1: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC: φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

1000p

V = V

1000p

RFC

D G1

47k

10p max

1SV70

Unit Resistance (Ω) Capacitance (F)

Output (50Ω)

3

BB402M

Maximum Channel Power

200

150

100

50

Channel Power Dissipation Pch (mW)

0

Dissipation Curve

50 100 150 200

Ambient Temperature Ta (¡C)

25

Typical Output Characteristics

V = 6 V

G2S

V = V

G1 DS

20

D

15

10

Drain Current I (mA)

5

0

246810

Drain to Source Voltage V (V)

Ω

56 k

68 k

82 k

100 k

120 k

150 k

180 k

220 k

G

R = 270 k

DS

Ω

Drain Current vs.

Gate2 to Source Voltage

25

Ω

20

D

56 k

15

10

Drain Current I (mA)

5

0

1.2 2.4 3.8 4.8 6.0

R = 220 k

V = V = 9 V

DS

Gate2 to Source Voltage V (V)

G

68 k

82 k

100 k

120 k

150 k

180 k

200 k

G1

Ω

G2S

Drain Current vs. Gate1 Voltage

20

V = 9 V

16

DS

R = 100 k

G

Ω

6 V 5 V 4 V

D

12

3 V 2 V

Ω

8

Ω

Drain Current I (mA)

Ω

4

0

246810 Gate1 Voltage V (V)

V = 1 V

G2S

G1

4

BB402M

Drain Current vs. Gate1 Voltege

20

V = 9 V

DS

R = 120 k

16

D

G

Ω

12

8

Drain Current I (mA)

4

0

246810

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

25

V = 9 V

DS

fs

20

R = 100 k

G

f = 1 kHz

Ω

15

6 V 5 V 4 V

V = 1 V

G2S

G1

6 V

5 V

2 V

4 V 3 V

3 V

Drain Current vs. Gate1 Voltege

20

V = 9 V

DS

R = 150 k

G

Ω

16

D

12

8

Drain Current I (mA)

4

0

246810

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

25

V = 9 V

DS

fs

20

R = 120 k

G

f = 1 kHz

Ω

15

6 V 5 V 4 V

2 V

V = 1 V

G2S

G1

6 V

5 V

4 V

3 V

10

5

Forward Transfer Admittance |y | (mS)

0

246810

V = 1 V

Gate1 Voltage V (V)

2 V

G2S

G1

10

2 V

5

V = 1 V

Forward Transfer Admittance |y | (mS)

0

246810

Gate1 Voltage V (V)

G2S

G1

5

BB402M

Forward Transfer Admittance

vs. Gate1 Voltage

25

V = 9 V

DS

fs

20

R = 150 k

G

f = 1 kHz

Ω

6 V

5 V

4 V

3 V

15

2 V

10

5

V = 1 V

Forward Transfer Admittance |y | (mS)

0

246810

Gate1 Voltage V (V)

G2S

G1

Power Gain vs. Gate Resistance

30

25

20

15

10

V = 9 V V = 9 V

5

V = 6 V f = 200 MHz

0

DS G1 G2S

Power Gain PG (dB)Power Gain PG (dB)

10 20 50 100 200 500 1000

Gate Resistance R (k )

Ω

G

Noise Figure vs. Gate Resistance

4

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

3

f = 200 MHz

2

1

Noise Figure NF (dB)

0

10 20 50 100 200 500 1000

Gate Resistance R (k )

Ω

G

30

25

20

15

10

5

0

Power Gain vs. Drain Current

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

R = variable

G

f = 200 MHz

510152025

Drain Current I (mA)

D

30

6

BB402M

Noise Figure vs. Drain Current

4

3

2

1

Noise Figure NF (dB)

0

510152025

Drain Current I (mA)

Gain Reduction vs.

Gate2 to Source Voltage

60

50

40

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

R = variable

G

f = 200 MHz

D

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

R = 120 k

G

f = 200 MHz

Drain Current vs. Gate Resistance

30

25

20

D

15

10

V = 9 V

Drain Current I (mA)

30

DS

5

V = 9 V

G1

V = 6 V

G2S

0

10 20 50 100 200 500 1000

Gate Resistance R (k )

Ω

G

Input Capacitance vs.

Gate2 to Source Voltage

6

5

Ω

4

30

20

Gain Reduction GR (dB)

10

0

12345

Gate2 to Source Voltage V (V)

3

2

V = 9 V

DS

V = 9 V

1

Input Capacitance Ciss (pF)

G1

R = 120 k

G

Ω

f = 1 MHz

0

67 6

G2S

1234

Gate2 to Source Voltage V (V)

5

G2S

7

BB402M

0

.4

.2

0

—.2

—.4

Test Condition :

150¡

180¡

—150¡

Test Condition :

S11 Parameter vs. Frequency

1

.8

.6

.2

.6

.4

.8

—.6

—.8

—1

V = 9 V , V = 9 V

DS

V = 6 V , R = 120 k

G2S

1.5 2

1.5

234

1

—2

—1.5

G1

G

50 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

Scale: 0.01 / div.

90¡

120¡

—120¡

—90¡

V = 9 V , V = 9 V

DS

V = 6 V , R = 120 k

G2S

50 1000 MHz (50 MHz step)

60¡

—60¡

G1

G

S21 Parameter vs. Frequency

Scale: 1 / div.

90¡

120¡

3

4

5

10

5

—10

—5

—4

—3

Ω

150¡

180¡

—150¡

Test Condition :

—120¡

—90¡

V = 9 V , V = 9 V

DS

V = 6 V , R = 120 k

G2S

60¡

—60¡

G1

G

30¡

0¡

—30¡

Ω

50 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

30¡

—30¡

Ω

.8

.6

.4

.2

0¡

0

—.2

.2

—.4

Test Condition :

.6

.4

.8

—.6

—.8

—1

V = 9 V , V = 9 V

DS

V = 6 V , R = 120 k

G2S

50 1000 MHz (50 MHz step)

1.5 2

3

4

5

10

1.5

234

1

—1.5

G1

10

5

—1

—5

—4

—3

—2

G

Ω

8

BB402M

Sparameter (VDS = VG1 = 9V, V

S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.988 –5.2 2.13 174.1 0.00052 90.0 0.985 –1.3 100 0.986 –10.4 2.13 167.9 0.00087 72.5 0.993 –3.6 150 0.979 –16.0 2.12 161.6 0.00156 79.4 0.992 –5.5 200 0.964 –21.5 2.08 155.2 0.00226 78.4 0.990 –7.5 250 0.948 –26.9 2.04 149.1 0.00254 71.0 0.987 –9.6 300 0.939 –32.0 2.00 143.0 0.00339 72.0 0.985 –11.4 350 0.920 –37.3 1.95 137.3 0.00335 59.0 0.982 –13.3 400 0.904 –42.3 1.91 131.5 0.00338 66.3 0.978 –15.3 450 0.885 –47.1 1.86 125.7 0.00351 62.2 0.974 –17.1 500 0.864 –51.7 1.81 120.1 0.00347 56.6 0.970 –18.9 550 0.848 –56.5 1.76 115.1 0.00355 61.5 0.966 –21.0 600 0.826 –60.9 1.70 110.1 0.00300 61.4 0.961 –22.7 650 0.808 –65.0 1.66 104.7 0.00289 51.1 0.957 –24.5 700 0.789 –69.4 1.61 100.3 0.00246 57.6 0.952 –26.6 750 0.773 –73.7 1.56 95.4 0.00211 70.0 0.947 –28.3 800 0.755 –77.9 1.51 90.5 0.00166 77.5 0.943 –30.2 850 0.735 –82.1 1.47 85.9 0.00165 114.5 0.937 –32.2 900 0.721 –86.3 1.42 81.3 0.00123 114.5 0.933 –34.1 950 0.703 –90.7 1.39 76.9 0.00176 145.8 0.927 –35.9 1000 0.677 –93.9 1.34 72.4 0.00204 164.0 0.923 –37.9

= 6V, RG = 120kΩ, Zo = 50Ω)

G2S

9

BB402M

Package Dimensions

2.95

0.95 0.95

4

0.4

+ 0.1 — 0.05

1.9

±0.2

Unit: mm

± 0.1

+ 0.1

0.4

— 0.05

0.65

3

0.16

+ 0.1 — 0.06

0.6

+ 0.1 — 0.05

± 0.2

± 0.15

2.8

1.5

1.8

2

0.95

0.4

+ 0.1 — 0.05

± 0.1

0.65

1

0.85

0 0.1

0.8

± 0.1

1.1

Hitachi Code

EIAJ

MPAK—4R

JEDEC

10

BB402M

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,

trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact

Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for

maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

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Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00

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