Datasheet BB305M Datasheet (HIT)

BB305M

Build in Biasing Circuit MOS FET IC

UHF/VHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Superior cross modulation characteristics.

• High gain; (PG = 28 dB typ. at f = 200 MHz)

• Wide supply voltage range;

Applicable with 5V to 9V supply voltage.

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4(SOT-143mod)

ADE-208-607C (Z)

4th. Edition

May 1998

Outline

Note: 1. Marking is “EW–”.

2. BB305M is individual type number of HITACHI BBFET.

MPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

BB305M

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate1 to source voltage V

Gate2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

12 V
+10

V

–0
±10 V
25 mA

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

12——VID = 200µA, V

voltage
Gate1 to source breakdown

V

(BR)G1SS

+10——VIG1 = +10µA, V

voltage
Gate2 to source breakdown

V

(BR)G2SS

±10——VIG2 = ±10µA, V

voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
Drain current I

I

G1SS

G2SS

D(op)

D(op)

G1S(off)

G2S(off)

iss

oss

rss

— — +100 nA V
——±100 nA V

= +9V, V

G1S

= ±9V, V

G2S

0.4 — 1.0 V VDS = 5V, V

0.4 — 1.0 V VDS = 5V, V

2.3 2.8 3.5 pF VDS = 5V, VG1 = 5V

1.1 1.5 1.9 pF V

=4V, RG = 82kΩ

G2S

— 0.017 0.04 pF f = 1MHz

1101520mAVDS = 5V, VG1 = 5V, V

R

= 82kΩ

G

2 — 13 — mA VDS = 9V, VG1 = 9V, V

R

= 220kΩ

G

Forward transfer admittance |yfs|1 23 28 — mS VDS = 5V, VG1 = 5V, V

R

=82kΩ, f = 1kHz

G

|yfs|2 — 28 — mS VDS = 9V, VG1 = 9V, V

R

= 220kΩ, f = 1kHz

G

Power gain PG1 24 28 — dB VDS = 5V, VG1 = 5V, V

R

= 82kΩ, f = 200MHz

G

PG2 — 28 — dB VDS = 9V, VG1 = 9V, V

R

= 220kΩ, f = 200MHz

G

Noise figure NF1 — 1.4 1.9 dB VDS = 5V, VG1 = 5V, V

R

= 82kΩ, f = 200MHz

G

NF2 — 1.4 — dB VDS = 9V, VG1 = 9V, V

R

= 220kΩ, f = 200MHz

G

= V

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= 4V, ID = 100µA

G2S

= 5V, ID = 100µA

G1S

BB305M

= 0

G2S

= 4V

G2S

=6V

G2S

=4V

G2S

=6V

G2S

=4V

G2S

=6V

G2S

=4V

G2S

=6V

G2S

3

BB305M

Main Characteristics

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

G2

Gate 2

Drain

A

I

D

Power Gain, Noise Figure Test Circuit

V

G2

1000p

1000p

V

T

D(op)

Gate 1

Source

R

G

V

G1

V

T

1000p

Input(50 ¶)

1000p

36p

1000p

47k

L1

1SV70

L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

47k

1000p

R

BBFET

82k

G

L2

1000p

1000p

RFC

V = V

D G1

47k

1SV70

Unit @Resistance @( ¶)

Output(50 ¶)

10p max

@@ Capacitance @(F)

.

4

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

25

V = 4 V @

G2S

V = V

G1 DS

20

D

15

10

Drain Current I (mA)

5

0

12345

Drain to Source Voltage V (V)

BB305M

W

47 k

56 k

68 k

82 k

100 k

120 k

150 k

180 k

G

R = 220 k

DS

W

W

W

W

W

W

W

W

Drain Current vs.

Gate2 to Source Voltage

25

V = V = 5 V

DS

G1

20

D

15

10

Drain Current I (mA)

5

0

0.8 1.6 2.4 3.2 4.0

Gate2 to Source Voltage V (V)

47 k

56 k

68 k

82 k

100 k

120 k

150 k

180 k

R = 220 k

G

G2S

W

W

W

W

W

W

W

W

W

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

R = 68 k

G

W

16

D

12

3 V

8

4

Drain Current I (mA)

0

12345

Gate1 Voltage V (V)

4 V

2 V

V = 1 V

G2S

G1

Å@

5

BB305M

Drain Current vs. Gate1 Voltege

20

V = 5 V

DS

R = 82 k

16

D

12

G

8

4

Drain Current I (mA)

0

W

3 V

12345

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

fs

24

R = 68 k

G

f = 1 kHz

W

V = 1 V

4 V

4 V

G2S

G1

2 V

3 V

Drain Current vs. Gate1 Voltege

20

V = 5 V

DS

16

D

12

R = 100 k

G

W

8

4

Drain Current I (mA)

0

12345

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

fs

24

R = 82 k

G

f = 1 kHz

W

4 V

3 V

V = 1 V

G2S

G1

4 V

2 V

3 V

18

12

6

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

6

2 V

V = 1 V

G2S

G1

18

2 V

12

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

G2S

G1

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

fs

24

18

R = 100 k

G

f = 1 kHz

W

4 V

2 V

12

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

G2S

G1

3 V

BB305M

Power Gain vs. Gate Resistance

40

35

30

25

20

V = 5 V

Power Gain PG (dB)

DS

V = 5 V

G1

15

V = 4 V

G2S

f = 200 MHz

10

10 20 50 100 200 500 1000

Gate Resistance R (k W )

G

Noise Figure vs. Gate Resistance

4

V = 5 V

DS

V = 5 V

G1

V = 4 V

G2S

3

f = 200 MHz

2

Noise Figure NF (dB)

1

0

10 20 50 100 200 500 1000

Gate Resistance R (k )

W

G

40

Power Gain vs. Drain Current

35

30

25

20

Power Gain PG (dB)

15

10

0

510152025

Drain Current I (mA)

V = 5 V

DS

V = 5 V

G1

V = 4 V

G2S

R = variable

G

f = 200 MHz

D

30

7

BB305M

Noise Figure vs. Drain Current

4

3

2

Noise Figure NF (dB)

1

0

510152025

Drain Current I (mA)

Gain Reduction vs.

Gate2 to Source Voltage

60

50

40

V = 5 V

DS

V = 5 V

G1

V = 4 V

G2S

R = variable

G

f = 200 MHz

D

V = 5 V

DS

V = 5 V

G1

V = 4 V

G2S

R = 82 k

G

f = 200 MHz

W

30

Drain Current vs. Gate Resistance

30

25

20

D

15

10

Drain Current I (mA)

V = 5 V

5

V = 5 V
V = 4 V

0

DS
G1
G2S

10 20 50 100 200 500 1000

Gate Resistance R (k )

G

Input Capacitance vs.

Gate2 to Source Voltage

6

5

4

W

30

20

Gain Reduction GR (dB)

10

0

123

Gate2 to Source Voltage V (V)

8

4

G2S

5

3

2

V = 5 V

1

Input Capacitance Ciss (pF)

V = 5 V
R = 82 k
f = 1 MHz

0

0123

Gate2 to Source Voltage V (V)

DS
G1
G

4

G2S

W

5

BB305M

.2

0

–.2

–.4

Test Condition :

150°

180°

–150°

Test Condition :

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

.6

.4

.8

–.6

–.8

–1

V = 5 V , V = 5 V

DS

V = 4 V , R = 82 k

G2S

1.5

1.5

234

1

–1.5

G1

G

50 ‘ 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

Scale: 0.002 / div.

90°

120°

–120°

–90°

V = 5 V , V = 5 V

DS

V = 4 V , R = 82 k

G2S

50 ‘ 1000 MHz (50 MHz step)

60°

–60°

G1

G

S21 Parameter vs. Frequency

Scale: 1 / div.

90°

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

150°

180°

–150°

W

120°

–120°

Test Condition :

–90°

V = 5 V , V = 5 V

DS

V = 4 V , R = 82 k

G2S

60°

–60°

G1

30°

0°

–30°

G

W

50 ‘ 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

30°

–30°

W

.8

.6

.4

.2

0°

0

–.2

.2

–.4

Test Condition :

.6

.4

.8

–.6

–.8

–1

V = 5 V , V = 5 V

DS

V = 4 V , R = 82 k

G2S

50 ‘ 1000 MHz (50 MHz step)

1.5
2

3

4

5

10

1.5

234

1

–1.5

G1

10

5

–10

–5

–4

–3

–2

G

W

9

BB305M

Sparameter (VDS = VG1 = 5V, V

S11 S21 S12 S22
f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
50 0.991 –4.8 2.69 174.9 0.00090 91.4 0.991 –2.2
100 0.991 –9.9 2.68 169.3 0.00153 90.5 0.992 –4.8
150 0.982 –15.4 2.66 163.4 0.00243 73.8 0.991 –7.5
200 0.975 –20.7 2.62 157.5 0.00293 74.9 0.989 –9.9
250 0.972 –25.6 2.60 152.0 0.00370 70.1 0.985 –12.6
300 0.956 –30.6 2.54 146.3 0.00444 69.0 0.981 –15.0
350 0.942 –35.5 2.47 140.9 0.00478 63.7 0.977 –17.3
400 0.928 –40.1 2.42 135.7 0.00535 64.8 0.973 –19.7
450 0.920 –44.9 2.38 130.5 0.00551 56.8 0.967 –22.0
500 0.906 –49.2 2.32 125.7 0.00549 58.6 0.962 –24.5
550 0.894 –53.6 2.25 120.8 0.00584 54.4 0.957 –26.9
600 0.880 –57.8 2.18 116.2 0.00542 53.3 0.952 –29.2
650 0.868 –62.1 2.12 111.5 0.00562 49.5 0.944 –31.5
700 0.854 –66.2 2.06 106.8 0.00509 48.6 0.939 –33.8
750 0.842 –70.3 2.00 102.5 0.00465 49.7 0.933 –36.1
800 0.835 –73.9 1.94 98.4 0.00427 51.6 0.927 –38.3
850 0.820 –77.7 1.89 94.0 0.00416 53.3 0.921 –40.5
900 0.802 –81.5 1.83 89.6 0.00289 57.9 0.915 –42.7
950 0.801 –84.7 1.78 85.6 0.00288 72.9 0.909 –44.9
1000 0.789 –87.9 1.73 82.1 0.00241 78.9 0.904 –47.1

= 4V, RG = 82kΩ, Zo = 50Ω)

G2S

10

Package Dimensions

2.8

1.9

0.95 0.95

3

0.4

+ 0.1
– 0.05

+ 0.3
– 0.1

BB305M

Unit: mm

+ 0.1

– 0.3

+ 0.1

0.4

– 0.05

0.65

2

0.16

+ 0.1
– 0.06

0.4

+ 0.1
– 0.05

+ 0.2

– 0.6

1.5

2.8

4

0.95

1

0.85

0.6

+ 0.1
– 0.05

+ 0.1

0.65

– 0.3

0 ~ 0.1

1.8

0.3

+ 0.2

– 0.1

1.1

Hitachi Code

EIAJ

JEDEC

MPAK–4

SC–61AA

—

11

Cautions

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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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