Datasheet BB301C Datasheet (HIT)

BB301C

Build in Biasing Circuit MOS FET IC

VHF RF Amplifier

ADE-208-507

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)

• Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,

Rs = 0 conditions.

Outline

1st. Edition

CMPAK–4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

BB301C

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate 1 to source voltage V

Gate 2 to source voltage V Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

6V +6

V

–0 ±6V 25 mA

2

BB301C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

6——VI

voltage Gate 1 to source breakdown

V

(BR)G1SS

+6 — — V IG1 = +10 µA

voltage Gate 2 to source breakdown

V

(BR)G2SS

±6— —V IG2 = ±10 µA

voltage Gate 1 to source cutoff current I

Gate 2 to source cutoff current I

Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

D(op)

— — +100 nA V

——±100 nA V

0.4 — 1.0 V VDS = 5 V, V

10 15 20 mA VDS = 5 V, VG1 = 5 V

Forward transfer admittance |yfs| 15 20 — mS VDS = 5 V, VG1 = 5 V

Input capacitance Ciss 2.2 3.0 4.0 pF VDS = 5 V, VG1 = 5 V Output capacitance Coss 0.9 1.2 1.6 pF V Reverse transfer capacitance Crss — 0.018 0.04 pF f = 1 MHz Power gain PG 22 26 — dB VDS = 5 V, VG1 = 5 V

Noise figure NF — 1.3 1.9 dB RG = 100 kΩ, f = 200 MHz Note: Marking is “AW–”.

= 200 µA

D

V

= V

G1S

V

G2S

V

G1S

V

G2S

V

G1S

I

= 100 µA

D

I

= 100 µA

D

V

G2S

V

G2S

R

= 100 kΩ, f = 1 kHz

G

G2S

V

G2S

= 0

G2S

= VDS = 0

= VDS = 0 = +5 V

= VDS = 0 = ±5 V

= VDS = 0

= 4 V

G2S

= 5 V

G1S

= 4 V, RG = 100 kΩ

= 4 V

= 4 V, RG = 100 kΩ

= 4 V

3

BB301C

Main Characteristics

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

G2 V

Gate 2

Drain

A I

D

D(op)

Gate 1

Source

R

G

G1

Application Circuit

V = 4 to 0.3 V

AGC

BBFET

V = 5 V

DS

Output

Input

R

G

V = 5 V

GG

4

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

30

25

20

(mA)

D

Typical Output Characteristics

V

= 4 V

G2S

V

= V

G1

15

10

Drain Current I

5

0

12345

Drain to Source Voltage V

DS

BB301C

Ω

47 k

56 k

68 k

82 k

100 k

120 k

150 k

180 k

G

R = 220 k

(V)

DS

Ω

25

20

(mA)

D

15

10

Drain Current I

5

0

Gate2 to Source Voltage V

Drain Current vs.

Gate2 to Source Voltage

Ω

56 k

47 k

R = 220 k

G

Ω

68 k

82 k

100 k

120 k

150 k

180 k

Ω

VDS = VG1 = 5 V

12345

(V)

G2S

Drain Current vs. Gate1 Voltage

20

VDS = 5 V R

= 82 kΩ

G

16

(mA)

D

12

8

Drain Current I

4

0

4 V

3 V

2 V

V

= 1 V

G2S

12345

Gate1 Voltage VG1 (V)

5

BB301C

Drain Current vs. Gate1 Voltege

20

VDS = 5 V R

= 100 kΩ

16

(mA)

D

12

G

8

Drain Current I

4

0

12345

Forward Transfer Admittance

30

VDS = 5 V R

= 82 kΩ

25

G

f = 1 kHz

fs

V

G2S

Gate1 Voltage VG1 (V)

vs. Gate1 Voltage

4 V

3 V

2 V

= 1 V

Drain Current vs. Gate1 Voltege

20

VDS = 5 V R

= 150 kΩ

G

16

(mA)

D

12

8

Drain Current I

4

0

12345

Forward Transfer Admittance

30

VDS = 5 V R

= 100 kΩ

G

fs

25

f = 1 kHz

4 V

V

G2S

Gate1 Voltage VG1 (V)

vs. Gate1 Voltage

3 V

2 V

= 1 V

4 V

20

3 V

15

10

2 V

5

V

= 1 V

G1

G2S

(V)

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V

20

3 V

15

2 V

10

5

V

= 1 V

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V

G2S

G1

(V)

6

BB301C

Forward Transfer Admittance

vs. Gate1 Voltage

20

VDS = 5 V R

= 150 kΩ

G

fs

16

f = 1 kHz

4 V

3 V

12

2 V

8

4

V

= 1 V

Forward Transfer Admittance |y | (mS)

0

12345

G2S

Gate1 Voltage VG1 (V)

Noise Figure vs. Gate Resistance

4

VDS = 5 V V

= 5 V

G1

V

= 4 V

G2S

3

f = 200 MHz

Power Gain vs. Gate Resistance

30

25

20

15

10

VDS = 5 V

Power Gain PG (dB)

V

= 5 V

G1

5

V

= 4 V

G2S

f = 200 MHz

0

10 20 50 100 200 500 1000

Gate Resistance R

(kΩ)

G

Power Gain vs. Drain Current

30

25

20

2

1

Noise Figure NF (dB)

0

10 20 50 100 200 500 1000

Gate Resistance R

(kΩ)

G

15

VDS = 5 V

10

V

= 5 V

Power Gain PG (dB)

G1

V

= 4 V

G2S

5

R

= variable

G

f = 200 MHz

0

510152025

Drain Current I

(mA)

D

30

7

BB301C

Noise Figure vs. Drain Current

4

3

2

1

Noise Figure NF (dB)

0

510152025

Drain Current I

Gain Reduction vs.

Gate2 to Source Voltage

60

50

40

VDS = 5 V V

= 5 V

G1

V

= 4 V

G2S

R

= variable

G

f = 200 MHz

(mA)

D

VDS = 5 V V

= 5 V

G1

V

= 4 V

G2S

R

= 100 kΩ

G

f = 200 MHz

30

Drain Current vs. Gate Resistance

30

25

20

(mA)

D

15

10

Drain Current I

5

0

VDS = 5 V V

= 5 V

G1

V

= 4 V

G2S

10 20 50 100 200 500 1000

Gate Resistance R

(kΩ)

G

Input Capacitance vs.

Gate2 to Source Voltage

4

3

30

20

Gain Reduction GR (dB)

10

0

1234

Gate2 to Source Voltage V

G2S

(V)

5

2

VDS = 5 V

1

V

= 5 V

Input Capacitance Ciss (pF)

G1

R

= 100 kΩ

G

f = 1 MHz

0

1234

Gate2 to Source Voltage V

G2S

5

(V)

8

Package Dimentions

2.0

1.3

0.65 0.65

3

0.3

+ 0.1 – 0.05

±0.2

BB301C

Unit: mm

+ 0.1

0.16

+ 0.1

0.3

– 0.05

0.425

2

– 0.06

0.3

+ 0.1 – 0.05

±0.3

1.25

2.1

0.6

1

+ 0.1

0.4

– 0.05

0.425

4

0.65

0 ~ 0.1

1.25

0.2

±0.1

0.9

Hitahi Code

EIAJ

JEDEC

CMPAK-4

SC-82AB

—

9

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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