Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D053
BB112
AM variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Page 2
Philips Semiconductors Product specification
AM variable capacitance diode BB112
FEATURES
• Matched to 3%
• Leaded plastic package
• C8.5: 23 pF; ratio: 21.
handbook, halfpage
k
a
MAM222
APPLICATIONS
• Electronic tuning in AM radio
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
applications
• VCO.
LIMITING VALUES
DESCRIPTION
The BB112 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD69 (TO-92 variant) leaded plastic
package.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
12 V
50 mA
+125 °C
+85 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
--------------------- C
d 8.5V()
∆
C
d
---------C
d
reverse current VR= 12 V; see Fig.3 −−
= 12 V; Tj=85°C; see Fig.3 −−
V
R
50
300
diode series resistance f = 500 kHz; note 1 −−1.5 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
= 8.5 V; f = 1 MHz; see Figs 2 and 4
V
R
440
17 − 29 pF
−
540 pF
capacitance ratio f = 1 MHz − 18 −
capacitance matching V
= 1 to 9 V; note 2 −−3%
R
nA
nA
Notes
1. V
= 1 V.
R
2. For a set of 3 diodes.
1996 May 03 2
Page 3
Philips Semiconductors Product specification
AM variable capacitance diode BB112
GRAPHICAL DATA
750
handbook, full pagewidth
C
d
(pF)
500
250
0
−1
10
f =1 MHz.
1
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MGC808
10
Tj (
MGC809
o
C)
1000
3
10
handbook, halfpage
I
R
(nA)
2
10
10
20 40 60 80
Fig.3 Reverse current as a function of junction
temperature; maximum values.
1996 May 03 3
3
10
handbook, halfpage
TC
d
−1
(K
)
4
10
5
10
1
10
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
V (V)
R
MLC815
2
Page 4
Philips Semiconductors Product specification
AM variable capacitance diode BB112
PACKAGE OUTLINE
0.40
min
4.2 max
4.8
max
2.54
1.6
k
a
12.7 min5.2 max
0.49
max
MBC879
Dimensions in mm.
0.67
max
dimensions within 2.5 max
uncontrolled
Fig.5 SOD69 (TO-92 variant).
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03 4
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