Datasheet BB102M Datasheet (HIT)

BB102M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics;

(NF = 2.1 dB typ. at f = 900 MHz)

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4(SOT-143mod)

ADE-208-587 (Z)

1st. Edition

November 1997

Outline

MPAK-4

2

3

1

4

• Note 1 Marking is “BW–”.

• Note 2 BB302M is individual type number of HITACHI BBFET.

1. Source

2. Gate1

3. Gate2

4. Drain

BB102M

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate1 to source voltage V

Gate2 to source voltage V Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage Gate1 to source breakdown

V

(BR)G1SS

voltage Gate2 to source breakdown

V

(BR)G2SS

voltage Gate1 to source cutoff current I Gate2 to source cutoff current I Gate1 to source cutoff voltage V Gate2 to source cutoff voltage V Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

D(op)

Forward transfer admittance |yfs| 16 21 — mS VDS = 9V, VG1 = 9V, V

Input capacitance c Output capacitance c Reverse transfer capacitance c

iss

oss

rss

Power gain PG 16 20 — dB VDS = 9V, VG1 = 9V, V Noise figure NF — 2.1 3.1 dB RG = 120kΩ, f = 900MHz

12 — — V ID = 200µA, V

+10 — — V IG1 = +10µA, V

±10 — — V IG2 = ±10µA, V

— — +100 nA V ——±100 nA V

0.1 — 0.8 V VDS = 9V, V

0.5 — 1.1 V VDS = 9V, V 10 15 20 mA VDS = 9V, VG1 = 9V, V

1.2 1.6 2.2 pF VDS = 9V, VG1 = 9V

0.7 1.1 1.5 pF V — 0.011 0.03 pF f = 1MHz

12 V +10

V

–0 ±10 V 25 mA

= +9V, V

G1S

= ±9V, V

G2S

G1S

R

= 560kΩ

G

R

= 560kΩ, f = 1kHz

G

=6V, RG = 560kΩ

G2S

= V

G1S

G2S

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= 6V, ID = 100µA = 9V, ID = 100µA

G2S

= 0

= 6V

=6V

2

Main Characteristics

BB102M

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

G2 V

Gate 2

Drain

A

I

D

D(op)

Gate 1

Source

R

G

G1

Application Circuit

V = 6 to 0.3 V

AGC

BBFET

V = 9 V

DS

RFC

Output

Input

R

G

V = 9 V

GG

3

BB102M

200

150

100

50

Maximum Channel Power

Dissipation Curve

25

Typical Output Characteristics

V = 6 V

G2S

V = V

G1 DS

20

D

15

10

Drain Current I (mA)

5

Ω

270 k

330 k

390 k

470 k

560 k

680 k

820 k

1 MΩ

1.5 MΩ

R = 2.2 M

G

Ω

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Drain Current vs.

Gate2 to Source Voltage

25

V = V = 9 V

20

D

15

10

DS

G1

270 k

330 k

390 k

Ω

470 k

560 k

680 k

820 k

1 MΩ

Ω

1.5 MΩ

Drain Current I (mA)

5

G

R = 2.2 M

0

246810

Drain to Source Voltage V (V)

DS

Drain Current vs. Gate1 Voltage

20

V = 9 V

DS

R = 470 k

G

16

D

12

Ω

6 V

5 V

4 V

3 V

2 V

8

Ω

Drain Current I (mA)

4

V = 1 V

G2S

0

1.2 2.4 3.8 4.8 6.0

Gate2 to Source Voltage V (V)

G2S

0

246810 Gate1 Voltage V (V)

G1

4

BB102M

Drain Current vs. Gate1 Voltege

20

V = 9 V

DS

R = 560 k

16

D

G

Ω

12

8

Drain Current I (mA)

4

0

246810

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

25

fs

20

15

6 V

5 V

4 V

3 V

2 V

V = 1 V

G2S

G1

6 V

5 V

4 V

3 V

2 V

Drain Current vs. Gate1 Voltege

20

V = 9 V

DS

R = 680 k

G

Ω

16

D

12

8

Drain Current I (mA)

4

0

246810 Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

25

fs

20

6 V

5 V

15

V = 1 V

G2S

G1

4 V

3 V

2 V

6 V

5 V

4 V

3 V

2 V

10

5

Forward Transfer Admittance |y | (mS)

0

246810

Gate1 Voltage V (V)

V = 9 V

DS

R = 470 k

G

f = 1 kHz

V = 1 V

G2S

G1

Ω

10

5

Forward Transfer Admittance |y | (mS)

0

246810

Gate1 Voltage V (V)

V = 9 V

DS

R = 560 k

G

f = 1 kHz

V = 1 V

G2S

G1

Ω

5

BB102M

Forward Transfer Admittance

vs. Gate1 Voltage

25

fs

20

15

10

6 V

5 V

4 V

3 V

2 V

V = 9 V

DS

R = 680 k

G

f = 1 kHz

5

V = 1 V

Forward Transfer Admittance |y | (mS)

0

246810

Gate1 Voltage V (V)

G2S

G1

Power Gain vs. Gate Resistance

30

25

20

15

Ω

10

V = 9 V V = 9 V

5

V = 6 V f = 900 MHz

0

DS G1 G2S

Power Gain PG (dB)Power Gain PG (dB)

10 20 50 100 200 500 1000

Gate Resistance R (k )

Ω

G

Noise Figure vs. Gate Resistance

4

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

3

f = 900 MHz

2

1

Noise Figure NF (dB)

0

10 20 50 100 200 500 1000

Gate Resistance R (k )

Ω

G

30

25

20

15

10

5

0

Power Gain vs. Drain Current

V = 9 V

DS

V = 9 V

G1

V = 6 V

G2S

R = variable

G

f = 900 MHz

51015202530

Drain Current I (mA)

D

35 40

6

BB102M

Noise Figure vs. Drain Current

4

3

2

V = 9 V

DS

V = 9 V

G1

1

Noise Figure NF (dB)

V = 6 V

G2S

R = variable

G

f = 900 MHz

0

5 10152025303540

Drain Current I (mA)

Gain Reduction vs.

Gate2 to Source Voltage

50

Drain Current vs. Gate Resistance

40

V = 9 V

DS

V = 9 V

G1

V = 6 V

30

D

G2S

20

10

Drain Current I (mA)

0

10 20 50 100 200 500 1000

D

Gate Resistance R (k )

Ω

G

Input Capacitance vs.

Gate2 to Source Voltage

3

40

V = 9 V V = 9 V V = 6 V

30

R = 560 k f = 900 MHz

20

Gain Reduction GR (dB)

10

0

12345

Gate2 to Source Voltage V (V)

DS G1 G2S G

Ω

2

1

V = 9 V

DS

V = 9 V

Input Capacitance Ciss (pF)

G1

R = 560 k

G

Ω

f = 1 MHz

67 6

G2S

0

12345

Gate2 to Source Voltage V (V)

G2S

7

BB102M

.4

.2

0

–.2

–.4

Test Condition :

150°

180°

–150°

Test Condition :

S11 Parameter vs. Frequency

1

.8

.6

.2

.6

.4

.8

–.6

–.8

–1

V = 9 V , V = 9 V

DS

V = 6 V , R = 560 k

G2S

1.5 2

1.5

234

1

–2

–1.5

G1

G

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

Scale: 0.01 / div.

90°

120°

–120°

–90°

V = 9 V , V = 9 V

DS

V = 6 V , R = 560 k

G2S

50 to 1000 MHz (50 MHz step)

60°

–60°

G1

G

S21 Parameter vs. Frequency

Scale: 1 / div.

90°

120°

3

4

5

10

5

–10

–5

–4

–3

Ω

150°

180°

–150°

Test Condition :

–120°

–90°

V = 9 V , V = 9 V

DS

V = 6 V , R = 560 k

G2S

–60°

G1

60°

G

30°

0°

–30°

Ω

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

30°

–30°

Ω

.8

.6

.4

.2

0°

0

–.2

.2

–.4

Test Condition :

.6

.4

.8

–.6

–.8

–1

V = 9 V , V = 9 V

DS

V = 6 V , R = 560 k

G2S

50 to 1000 MHz (50 MHz step)

1.5 2

3

4

5

10

1.5

234

1

–1.5

G1

10

5

–10

–5

–4

–3

–2

G

Ω

8

BB102M

Sparameter (VDS = VG1 = 9V, V

S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.995 –2.9 2.22 176.0 0.00046 66.9 0.977 –1.0 100 0.991 –6.0 2.21 172.0 0.00109 90.4 0.987 –3.2 150 0.987 –9.4 2.21 168.0 0.00122 76.5 0.987 –5.0 200 0.985 –12.4 2.19 163.6 0.00180 81.9 0.985 –6.7 250 0.975 –15.4 2.18 159.3 0.00228 86.0 0.983 –8.4 300 0.969 –18.4 2.15 155.3 0.00246 78.8 0.981 –10.0 350 0.954 –21.5 2.12 151.7 0.00273 76.2 0.979 –11.7 400 0.948 –24.6 2.11 147.6 0.00331 66.9 0.976 –13.4 450 0.933 –27.5 2.08 143.7 0.00334 74.7 0.973 –14.9 500 0.923 –30.7 2.05 139.9 0.00357 68.4 0.969 –16.8 550 0.912 –33.6 2.02 136.2 0.00328 67.5 0.965 –18.3 600 0.892 –36.3 1.99 123.9 0.00305 69.8 0.961 –19.9 650 0.882 –39.3 1.96 128.7 0.00322 66.7 0.958 –21.5 700 0.868 –42.0 1.92 125.4 0.00297 70.3 0.953 –23.4 750 0851 –45.0 1.90 122.0 0.00286 74.4 0.948 –24.7 800 0.834 –47.7 1.87 117.9 0.00273 71.9 0.944 –26.2 850 0.815 –50.6 1.83 114.9 0.00226 88.1 0.940 –27.9 900 0.801 –53.5 1.82 111.2 0.00143 95.5 0.934 –29.4 950 0.788 –55.9 1.79 107.8 0.00131 98.6 0.931 –31.0 1000 0.768 –58.5 1.77 104.4 0.00189 145.2 0.925 –32.9

= 6V, RG = 560kΩ, Zo = 50Ω)

G2S

9

BB102M

Package Dimensions

2.8

1.9

0.95 0.95

3

0.4

+ 0.1 – 0.05

+ 0.3 – 0.1

Unit: mm

+ 0.1

– 0.3

+ 0.1

0.4

– 0.05

0.65

2

0.16

+ 0.1 – 0.06

0.4

+ 0.1 – 0.05

+ 0.2

– 0.6

1.5

2.8

0.85

1

+ 0.1

0.6

– 0.05

+ 0.1

– 0.3

0.65

4

0.95

0 ~ 0.1

1.8

0.3

+ 0.2

– 0.1

1.1

Hitachi Code

EIAJ

JEDEC

MPAK–4

SC–61AA

—

10

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

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