Datasheet BB102C Datasheet (HIT)

BB102C

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-588 (Z)

1st. Edition

November 1997

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics;

(NF = 2.1 dB typ. at f = 900 MHz)

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

CMPAK-4

1. Source

2. Gate1

3. Gate2

4. Drain

1

4

3

2

• Note 1 Marking is “BW–”.

• Note 2 BB302C is individual type number of HITACHI BBFET.

BB102C

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DS

12 V

Gate1 to source voltage V

G1S

+10
–0

V

Gate2 to source voltage V

G2S

±10 V

Drain current I

D

25 mA
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown
voltage

V

(BR)DSS

12 — — V ID = 200µA, V

G1S

= V

G2S

= 0

Gate1 to source breakdown
voltage

V

(BR)G1SS

+10 — — V IG1 = +10µA, V

G2S

= VDS = 0

Gate2 to source breakdown
voltage

V

(BR)G2SS

±10 — — V IG2 = ±10µA, V

G1S

= VDS = 0

Gate1 to source cutoff current I

G1SS

— — +100 nA V

G1S

= +9V, V

G2S

= VDS = 0

Gate2 to source cutoff current I

G2SS

——±100 nA V

G2S

= ±9V, V

G1S

= VDS = 0

Gate1 to source cutoff voltage V

G1S(off)

0.1 — 0.8 V VDS = 9V, V

G2S

= 6V, ID = 100µA

Gate2 to source cutoff voltage V

G2S(off)

0.5 — 1.1 V VDS = 9V, V

G1S

= 9V, ID = 100µA

Drain current I

D(op)

10 15 20 mA V

D

S

= 9V, V

G

1

= 9V, V

G2S

= 6V

R

G

= 560kΩ

Forward transfer admittance |yfs| 16 21 — mS V

D

S

= 9V, V

G

1

= 9V, V

G2S

=6V

R

G

= 560kΩ, f = 1kHz

Input capacitance c

iss

1.2 1.6 2.2 pF VDS = 9V, VG1 = 9V

Output capacitance c

oss

0.7 1.1 1.5 pF V

G2S

=6V, RG = 560kΩ

Reverse transfer capacitance c

rss

— 0.011 0.03 pF f = 1MHz

Power gain PG 16 20 — dB VDS = 9V, VG1 = 9V, V

G2S

=6V

Noise figure NF — 2.1 3.1 dB RG = 120kΩ, f = 900MHz

BB102C

3

Main Characteristics

Gate 1

Source

Drain

Gate 2

R

G

A

I

D

V

G2 V

G1

Output

Input

V = 6 to 0.3 V

AGC

V = 9 V

DS

R

G

V = 9 V

GG

BBFET

RFC

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

D(op)

Application Circuit

BB102C

4

200

150

100

50

0

50 100 150 200

25

20

15

10

5

0

1.2 2.4 3.8 4.8 6.0

20

16

12

8

4

0

246810

0

246810

25

20

15

10

5

R = 2.2 M

G

Ω

V = 6 V
V = V

G2S
G1 DS

V = 9 V
R = 470 k

Ω

DS

G

270 k

Ω

330 k

Ω

390 k

Ω

470 k

Ω

560 k

Ω

680 k

Ω

1 MΩ

1.5 MΩ

820 k

Ω

R = 2.2 M

G

Ω

270 k

Ω

330 k

Ω

390 k

Ω

470 k

Ω

560 k

Ω

680 k

Ω

1 MΩ

1.5 MΩ

820 k

Ω

V = V = 9 V

DS

G1

V = 1 V

G2S

6 V

5 V

4 V

3 V

2 V

Channel Power Dissipation Pch (mW)

Ambient Temperature Ta (¡C)

Maximum Channel Power

Dissipation Curve

Drain to Source Voltage V (V)

DS

Drain Current I (mA)

D

Typical Output Characteristics

Drain Current I (mA)

D

Drain Current I (mA)

D

Gate2 to Source Voltage V (V)

G2S

Gate1 Voltage V (V)

G1

Drain Current vs. Gate1 Voltage

Drain Current vs.

Gate2 to Source Voltage

BB102C

5

20

16

12

8

4

0

246810

20

16

12

8

4

0

246810

V = 1 V

G2S

V = 9 V
R = 560 k

Ω

DS

G

V = 9 V
R = 680 k

Ω

DS

G

25

20

15

10

5

0

246810

25

20

15

10

5

0

246810

Ω

V = 9 V
R = 470 k
f = 1 kHz

DS

G

V = 1 V

G2S

4 V

3 V

V = 1 V

G2S

Ω

V = 9 V
R = 560 k
f = 1 kHz

DS

G

2 V

V = 1 V

G2S

5 V

6 V

6 V

5 V

4 V

2 V

3 V

6 V

5 V

4 V

3 V

2 V

6 V

5 V

4 V

3 V

2 V

Drain Current I (mA)

D

Forward Transfer Admittance |y | (mS)

fs

Gate1 Voltage V (V)

G1

Gate1 Voltage V (V)

G1

Drain Current vs. Gate1 Voltege

Drain Current I (mA)

D

Gate1 Voltage V (V)

G1

Drain Current vs. Gate1 Voltege

Forward Transfer Admittance

vs. Gate1 Voltage

Gate1 Voltage V (V)

G1

Forward Transfer Admittance

vs. Gate1 Voltage

Forward Transfer Admittance |y | (mS)

fs

BB102C

6

25

20

15

10

5

0

246810

30

25

20

15

10

5

0

10 20 50 100 200 500 1000

30

25

20

15

10

5

0

51015202530

V = 9 V
V = 9 V
V = 6 V
f = 900 MHz

DS
G1
G2S

0

4

3

2

1

10 20 50 100 200 500 1000

V = 9 V
V = 9 V
V = 6 V
f = 900 MHz

DS
G1
G2S

Ω

V = 9 V
R = 680 k
f = 1 kHz

DS

G

V = 1 V

G2S

6 V

5 V

4 V

3 V

2 V

35 40

V = 9 V
V = 9 V
V = 6 V
R = variable
f = 900 MHz

DS
G1
G2S
G

Forward Transfer Admittance |y | (mS)

fs

Forward Transfer Admittance

vs. Gate1 Voltage

Gate1 Voltage V (V)

G1

Power Gain vs. Gate Resistance

Gate Resistance R (k )

G

Ω

Power Gain PG (dB)Power Gain PG (dB)

Power Gain vs. Drain Current

Drain Current I (mA)

D

Noise Figure vs. Gate Resistance

Gate Resistance R (k )

G

Ω

Noise Figure NF (dB)

BB102C

7

0

12345

0

12345

0

10 20 50 100 200 500 1000

67 6

3

2

1

4

3

2

1

0

5 10152025303540

V = 9 V
V = 9 V
V = 6 V
R = variable
f = 900 MHz

DS
G1
G2S
G

40

30

20

10

V = 9 V
V = 9 V
V = 6 V

DS
G1
G2S

50

40

30

20

10

V = 9 V
V = 9 V
V = 6 V
R = 560 k
f = 900 MHz

DS
G1
G2S
G

Ω

V = 9 V
V = 9 V
R = 560 k
f = 1 MHz

DS
G1
G

Ω

Gain Reduction GR (dB)

Gain Reduction vs.

Gate2 to Source Voltage

Gate2 to Source Voltage V (V)

G2S

Noise Figure NF (dB)

Noise Figure vs. Drain Current

Drain Current I (mA)

D

Input Capacitance Ciss (pF)

Input Capacitance vs.

Gate2 to Source Voltage

Gate2 to Source Voltage V (V)

G2S

Drain Current I (mA)

D

Drain Current vs. Gate Resistance

Gate Resistance R (k )

G

Ω

BB102C

8

10

5

4

3

2

1.5

1

.8

—2

—3

—4

—5

—10

.6

.4

.2

0

—.2

—.4

—.6

—.8

—1

—1.5

.2

.4

.6

.8

1

234

5

1.5

10

Scale: 1 / div.

0¡

30¡

60¡

90¡

120¡

150¡

180¡

—150¡

—90¡

—60¡

—30¡

—120¡

Scale: 0.01 / div.

0¡

30¡

60¡

90¡

120¡

150¡

180¡

—150¡

—90¡

—60¡

—30¡

—120¡

10

5

4

3

2

1.5

1

.8

—2

—3

—4

—5

—1

0

.6

.4

.2

0

—.2

—.4

—.6

—.8

—1

—1.5

.2

.4

.6

.8

1

234

5

1.5

10

S11 Parameter vs. Frequency

S21 Parameter vs. Frequency

S12 Parameter vs. Frequency

S22 Parameter vs. Frequency

Test Condition :

50 1000 MHz (50 MHz step)

DS

Ω

G1

V = 9 V , V = 9 V
V = 6 V , R = 560 k

G2S

G

Test Condition :

50 1000 MHz (50 MHz step)

DS

Ω

G1

V = 9 V , V = 9 V
V = 6 V , R = 560 k

G2S

G

Test Condition :

50 1000 MHz (50 MHz step)

DS

Ω

G1

V = 9 V , V = 9 V
V = 6 V , R = 560 k

G2S

G

Test Condition :

50 1000 MHz (50 MHz step)

DS

Ω

G1

V = 9 V , V = 9 V
V = 6 V , R = 560 k

G2S

G

BB102C

9

Sparameter (VDS = VG1 = 9V, V

G2S

= 6V, RG = 560kΩ, Zo = 50Ω)

S11 S21 S12 S22
f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
50 0.995 –2.9 2.22 176.0 0.00046 66.9 0.977 –1.0
100 0.991 –6.0 2.21 172.0 0.00109 90.4 0.987 –3.2
150 0.987 –9.4 2.21 168.0 0.00122 76.5 0.987 –5.0
200 0.985 –12.4 2.19 163.6 0.00180 81.9 0.985 –6.7
250 0.975 –15.4 2.18 159.3 0.00228 86.0 0.983 –8.4
300 0.969 –18.4 2.15 155.3 0.00246 78.8 0.981 –10.0
350 0.954 –21.5 2.12 151.7 0.00273 76.2 0.979 –11.7
400 0.948 –24.6 2.11 147.6 0.00331 66.9 0.976 –13.4
450 0.933 –27.5 2.08 143.7 0.00334 74.7 0.973 –14.9
500 0.923 –30.7 2.05 139.9 0.00357 68.4 0.969 –16.8
550 0.912 –33.6 2.02 136.2 0.00328 67.5 0.965 –18.3
600 0.892 –36.3 1.99 123.9 0.00305 69.8 0.961 –19.9
650 0.882 –39.3 1.96 128.7 0.00322 66.7 0.958 –21.5
700 0.868 –42.0 1.92 125.4 0.00297 70.3 0.953 –23.4
750 0851 –45.0 1.90 122.0 0.00286 74.4 0.948 –24.7
800 0.834 –47.7 1.87 117.9 0.00273 71.9 0.944 –26.2
850 0.815 –50.6 1.83 114.9 0.00226 88.1 0.940 –27.9
900 0.801 –53.5 1.82 111.2 0.00143 95.5 0.934 –29.4
950 0.788 –55.9 1.79 107.8 0.00131 98.6 0.931 –31.0
1000 0.768 –58.5 1.77 104.4 0.00189 145.2 0.925 –32.9

BB102C

10

Package Dimensions

Unit: mm

0.16

0 ~ 0.1

0.2

+ 0.1
— 0.06

0.65

0.6

1.25

0.425

1.25

0.425

0.9

–0.1

0.65 0.65

1.3

2.0

–0.2

0.3

+ 0.1
— 0.05

0.3

+ 0.1
— 0.05

0.4

+ 0.1
— 0.05

0.3

+ 0.1
— 0.05

2.1

–0.3

3

2

4

1

Hitahi Code

EIAJ

JEDEC

CMPAK-4

SC-82AB

BB102C

11

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

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