Page 1
BB101C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-505
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
1st. Edition
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Page 2
BB101C
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
6V
+6
V
–0
±6V
25 mA
2
Page 3
BB101C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source break down
V
(BR)DSS
6——VI
voltage
Gate 1 to source breakdown
V
(BR)G1SS
+6 — — V IG1 = +10 µA
voltage
Gate 2 to source breakdown
V
(BR)G2SS
±6— —V IG2 = +10 µA
voltage
Gate 1 to source cutoff current I
Gate 2 to source cutoff current I
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
D(op)
— — +100 nA V
——±100 nA V
0.2 — 0.8 V VDS = 5 V, V
0.4 — 1.0 V VDS = 5 V, V
10 15 20 mA VDS = 5 V, VG1 = 5 V
Forward transfer admittance |yfs| 16 22 — mS VDS = 5 V, VG1 = 5 V
Input capacitance Ciss 1.2 1.7 2.2 pF VDS = 5 V, VG1 = 5 V
Output capacitance Coss 0.7 1.1 1.5 pF V
Reverse transfer capacitance Crss — 0.012 0.03 pF f = 1 MHz
Power gain PG 16 20 — dB VDS = 5 V, VG1 = 5 V
Noise figure NF — 2.0 3.0 dB RG = 220 kΩ, f = 900 MHz
Note: Marking is “AU–”.
= 200 µA
D
V
= V
G1S
V
G2S
V
G1S
G1S
V
G2S
G2S
V
G1S
I
= 100 µA
D
I
= 100 µA
D
V
G2S
V
G2S
R
= 220 kΩ, f = 1 kHz
G
G2S
V
G2S
= 0
G2S
= VDS = 0
= VDS = 0
= +5 V
= VDS = 0
= ±5 V
= VDS = 0
= 4 V
G2S
= 5 V
G1S
= 4 V, RG = 220 kΩ
= 4 V
= 4 V, RG = 220 kΩ
= 4 V
3
Page 4
BB101C
Main Characteristics
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2 V
Gate 2
Drain
A
I
D
D(op)
Gate 1
Source
R
G
G1
Application Circuit
V = 4 to 0.3 V
AGC
BBFET
V = 5 V
DS
Output
Input
R
G
V = 5 V
GG
4
Page 5
200
150
100
50
Maximum Channel Power
Dissipation Curve
25
20
(mA)
D
15
Typical Output Characteristics
V
= 4 V
G2S
V
= V
G1
10
Drain Current I
5
DS
100 k Ω
= 470 kΩ
G
R
BB101C
Ω
120 k Ω
Ω
150 k
Ω
180 k
220 k
Ω
270 k
Ω
330 k
Ω
390 k
Channel Power Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
100 k
120 k
Ω
VDS = VG1 = 5 V
20
150 k
(mA)
D
15
180 k
220 k
270 k
= 470 kΩ
R
G
330 k
390 k
G2S
10
Drain Current I
5
0
12345
Gate2 to Source Voltage V
Ω
Ω
(V)
0
12345
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
R
= 150 kΩ
G
16
Ω
Ω
Ω
Ω
Ω
(mA)
D
12
8
Drain Current I
4
0
12345
4 V
3 V
2 V
V
= 1 V
G2S
Gate1 Voltage VG1 (V)
5
Page 6
BB101C
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
R
= 220 kΩ
16
(mA)
12
D
G
8
Drain Current I
4
0
12345
Forward Transfer Admittance
25
VDS = 5 V
R
= 150 kΩ
G
fs
20
f = 1 kHz
Gate1 Voltage V
vs. Gate1 Voltage
4 V
3 V
V
G2S
G1
4 V
3 V
= 1 V
(V)
2 V
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
R
= 390 kΩ
G
16
(mA)
D
12
8
Drain Current I
4
0
12345
Forward Transfer Admittance
25
VDS = 5 V
R
= 220 kΩ
G
fs
20
f = 1 kHz
V
G2S
Gate1 Voltage VG1 (V)
vs. Gate1 Voltage
4 V
3 V
4 V
3 V
2 V
= 1 V
15
2 V
10
5
V
= 1 V
Forward Transfer Admittance |y | (mS)
0
12345
Gate1 Voltage V
G2S
G1
(V)
15
2 V
10
5
V
= 1 V
Forward Transfer Admittance |y | (mS)
0
12345
Gate1 Voltage V
G2S
G1
(V)
6
Page 7
BB101C
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
R
= 390 kΩ
G
fs
20
f = 1 kHz
4 V
3 V
15
2 V
10
5
V
= 1 V
G1
G2S
(V)
Forward Transfer Admittance |y | (mS)
0
12345
Gate1 Voltage V
Noise Figure vs. Gate Resistance
4
3
Power Gain vs. Gate Resistance
30
25
20
15
10
Power Gain PG (dB)
5
VDS = 5 V
V
= 5 V
G1
V
= 4 V
G2S
f = 900 MHz
0
50 100 200 500 1000 2000 5000
Gate Resistance R
(kΩ)
G
Power Gain vs. Drain Current
30
25
20
2
VDS = 5 V
1
Noise Figure NF (dB)
V
= 5 V
G1
V
= 4 V
G2S
f = 900 MHz
0
50 100 200 500 1000 2000 5000
Gate Resistance R
(kΩ)
G
15
VDS = 5 V
10
V
= 5 V
Power Gain PG (dB)
G1
V
= 4 V
G2S
5
R
= variable
G
f = 900 MHz
0
510152025
Drain Current I
(mA)
D
30
7
Page 8
BB101C
Noise Figure vs. Drain Current
4
3
2
VDS = 5 V
V
= 5 V
G1
1
Noise Figure NF (dB)
V
= 4 V
G2S
R
= variable
G
f = 900 MHz
0
510152025
Drain Current I
Gain Reduction vs.
Gate2 to Source Voltage
40
30
(mA)
D
VDS = 5 V
V
= 5 V
G1
V
= 4 V
G2S
R
= 220 kΩ
G
f = 900 MHz
30
Drain Current vs. Gate Resistance
30
25
20
(mA)
D
15
10
Drain Current I
V = 5 V
DS
5
V = 5 V
G1
V = 4 V
G2S
0
10 30 100 300 1000 3000 10000
Gate Resistance R
(kΩ)
G
Input Capacitance vs.
Gate2 to Source Voltage
4
VDS = 5 V
V
= 5 V
G1
R
= 220 kΩ
3
G
f = 1 MHz
20
10
Gain Reduction GR (dB)
0
1234
Gate2 to Source Voltage V
G2S
(V)
5
2
1
Input Capacitance Ciss (pF)
0
1234
Gate2 to Source Voltage V
G2S
5
(V)
8
Page 9
Output Capacitance vs.
Gate2 to Source Voltage
4
VDS = 5 V
V
G1
R
3
G
f = 1 MHz
2
1
Output Capacitance Coss (pF)
BB101C
= 5 V
= 220 kΩ
0
1234
Gate2 to Source Voltage V
G2S
5
(V)
9
Page 10
BB101C
Package Dimentions
2.0
1.3
0.65 0.65
3
0.3
+ 0.1
– 0.05
±0.2
Unit: mm
+ 0.1
0.16
+ 0.1
0.3
– 0.05
0.425
2
– 0.06
0.3
+ 0.1
– 0.05
±0.3
1.25
2.1
0.6
1
+ 0.1
0.4
– 0.05
0.425
4
0.65
0 ~ 0.1
1.25
0.2
±0.1
0.9
Hitahi Code
EIAJ
JEDEC
CMPAK-4
SC-82AB
—
10
Page 11
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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