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Page 2
BAX16
High Voltage General Purpose Diode
DO-35 Glass case
COLOR BAND DENO TES CATHOD E
BAX16 — High Voltage General Purpose Diode
April 2008
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Unit
V
RRM
I
F(AV)
i
f
I
FSM
T
STG
T
J
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Notes:
1) These ratings are based on a maximum junction temperature of 200degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics * T
Maximum Repetitive Reverse Voltage 150 V
Average Rectified Forward Current 200 mA
Recurrent Peak Forward Current 600 mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
1
4
A
A
Storage Temperature Range -65 to 200 °C
Operating Junction Temperature 175 °C
= 25°C unless otherwise noted
a
Symbol Parameter Conditions Min. Max. Units
V
R
V
F
V
FP
I
R
t
rr
Breakdown Voltage IR = 100mA 180 V
Forward Voltage IF = 1.0mA 0.65 V
Forward Voltage
Pulse Width = 300ms
Reverse Leakage VR = 50V
Reverse Recovery Time IF = 30mA, IR = 30mA,
IF = 100mA
IF = 200mA
VR = 50V, TA = 150°C
VR = 150V
VR = 150V, TA = 150°C
1.3
1.5
25
25
100
100
120 ns
Irr = 1.0mA, RL = 100W
nA
mA
nA
mA
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAX16 Rev. 1.0.0 1
Page 3
Typical Performance Characteristics
BAX16 — High Voltage General Purpose Diode
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAX16 Rev. 1.0.0 2
Page 4
Typical Performance Characteristics
BAX16 — High Voltage General Purpose Diode
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAX16 Rev. 1.0.0 3
Page 5
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BAX16 High Voltage General Purpose DiodeBAX16
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ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAX16 Rev. 1.0.0 4
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