Datasheet BAX14 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

BAX14

General purpose diode

Product specification
Supersedes data of April 1996

1996 Sep 17

Philips Semiconductors Product specification

General purpose diode BAX14

FEATURES

• Hermetically sealed leaded glass
SOD27 (DO-35) package

• Switching speed: max. 50 ns

DESCRIPTION

The BAX14 is a general purpose switching diode fabricated in planar
technology, and encapsulated in the hermetically sealed leaded glass SOD27
(DO-35) package.

• General application

• Continuous reverse voltage:

max. 20 V

• Repetitive peak reverse voltage:
max. 40 V

handbook, halfpage

k

a

• Repetitive peak forward current:
max. 2 A.

MAM246

APPLICATIONS

• Low-voltage switching

• Rectifier applications

The diode is type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

• Low-voltage stabilizing.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 40 V
continuous reverse voltage − 20 V
continuous forward current see Fig.2; note 1 − 500 mA
repetitive peak forward current − 2000 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 55 A
t = 100 µs − 15 A
t = 10 ms − 9A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 450 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 17 2

Philips Semiconductors Product specification

General purpose diode BAX14

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

t

rr

THERMAL CHARACTERISTICS

forward voltage see Fig.3

I

= 1 mA 520 600 mV

F

I

= 300 mA 750 1000 mV

F

reverse current see Fig.5

V

=20V − 100 nA

R

V

=20V; Tj= 150 °C − 100 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 35 pF
reverse recovery time when switched from IF= 30 mA to

− 50 ns
IR= 30 mA; RL= 100 Ω;
measured at IR= 3 mA; see Fig.7

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 17 3

Philips Semiconductors Product specification

General purpose diode BAX14

GRAPHICAL DATA

amb

MBG455

(oC)

500

handbook, halfpage

I

F

(mA)

400

300

200

100

0

0 100 200

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

T

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

600

handbook, halfpage

I

F

(mA)

400

200

0

012

(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (2) (3)

MBG462

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG702

10

2

10

3

10

tp (µs)

4

10

1996 Sep 17 4

Philips Semiconductors Product specification

General purpose diode BAX14

7

handbook, full pagewidth

VR=20V.
Solid line; maximum values. Dotted line; typical values.

10

I

R

(nA)

6

10

5

10

4

10

3

10

2

10

10

0 100 200

Fig.5 Reverse current as a function of junction temperature.

MBG696

o

T

(

C)

j

40

handbook, halfpage

C

d

(pF)

30

20

10

0

0102030

f = 1 MHz; Tj=25°C.

MGD003

V

(V)

R

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1996 Sep 17 5

Philips Semiconductors Product specification

General purpose diode BAX14

handbook, full pagewidth

R = 50SΩ

V = V I x R

RF S

(1) IR= 3 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.7 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

1996 Sep 17 6

Philips Semiconductors Product specification

General purpose diode BAX14

PACKAGE OUTLINE

dbook, full pagewidth

Dimensions in mm.

1.85
max

25.4 min

4.25
max

25.4 min

0.56
max

MLA428 - 1

Fig.8 SOD27 (DO-35).

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Sep 17 7