Datasheet BAX12, BAX12A Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of April 1996

1996 Sep 17

DISCRETE SEMICONDUCTORS

BAX12

Controlled avalanche diode

M3D176

1996 Sep 17 2

Philips Semiconductors Product specification

Controlled avalanche diode BAX12

FEATURES

• Hermetically sealed leaded glass
SOD27 (DO-35) package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 90 V

• Repetitive peak reverse voltage:
max. 90 V

• Repetitive peak forward current:
max. 800 mA

• Repetitive peak reverse current:
max. 600 mA

• Capable of absorbing transients
repetitively.

APPLICATIONS

• Switching of inductive loads in
semi-electronic telephone
exchanges.

DESCRIPTION

The BAX12 is a controlled avalanche diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.

Fig.1 Simplified outline (SOD27; DO35) and symbol.

Marking code: BAX12.

handbook, halfpage

MAM246

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the I

RRM

rating.

2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage note 1 − 90 V

V

R

continuous reverse voltage note 1 − 90 V

I

F

continuous forward current see Fig.2; note 2 − 400 mA

I

FRM

repetitive peak forward current − 800 mA

I

FSM

non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 55 A
t = 100 µs − 15 A
t = 10 ms − 9A

P

tot

total power dissipation T

amb

=25°C; note 2 − 450 mW

I

RRM

repetitive peak reverse current − 600 mA

E

RRM

repetitive peak reverse energy tp≥ 50 µs; f ≤ 20 Hz; Tj=25°C − 5.0 mJ

T

stg

storage temperature −65 +200 °C

T

j

junction temperature − 200 °C

1996 Sep 17 3

Philips Semiconductors Product specification

Controlled avalanche diode BAX12

ELECTRICAL CHARACTERISTICS

T

j

=25°C; unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

forward voltage see Fig.3

I

F

=10mA − 750 mV

I

F

=50mA − 840 mV

I

F

= 100 mA − 900 mV

I

F

= 200 mA − 1.0 V

I

F

= 400 mA − 1.25 V

I

R

reverse current see Fig.5

V

R

=90V − 100 nA

V

R

= 90 V; Tj= 150 °C − 100 µA

V

(BR)R

reverse avalanche breakdown voltage IR= 1 mA 120 170 V

C

d

diode capacitance f = 1 MHz; VR=0;

see Fig.6

− 35 pF

t

rr

reverse recovery time when switched from

IF= 30 mA to IR=30mA;
RL= 100 Ω; measured at
IR= 3 mA; see Fig.10

− 50 ns

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point lead length 10 mm 240 K/W

R

th j-a

thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W

1996 Sep 17 4

Philips Semiconductors Product specification

Controlled avalanche diode BAX12

GRAPHICAL DATA

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

handbook, halfpage

0 100 200

400

500

300

200

0

100

MBG455

T

amb

(oC)

I

F

(mA)

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

012

600

0

200

400

MBG463

VF (V)

I

F

(mA)

(1) (2) (3)

(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.
Tj=25°C prior to surge.

handbook, full pagewidth

MBG702

10

tp (µs)

1

I

FSM

(A)

10

2

10

−1

10

4

10

2

10

3

10

1

1996 Sep 17 5

Philips Semiconductors Product specification

Controlled avalanche diode BAX12

Fig.5 Reverse current as a function of junction temperature.

handbook, full pagewidth

0 100 200

10

10

2

10

4

10

3

10

5

10

6

10

7

MBG696

I

R

(nA)

T

j

(

o

C)

VR=90V.
Solid line; maximum values. Dotted line; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

0102030

V

R

(V)

40

C

d

(pF)

30

10

0

20

MGD003

Fig.7 Maximum permissible repetitive peak

reverse power as a function of the pulse
duration T ≥ 50 ms; Tj=25°C.

Solid line; rectangular waveform; δ≤0.01.
Dotted line; triangular waveform; δ≤0.02.
(1) Limited by I

RMM

= 600 mA.

handbook, half age

MBG701

10

−1

110

1

10

10

2

10

3

10

−2

P

RRM
(W)

t (ms)

(1)

1996 Sep 17 6

Philips Semiconductors Product specification

Controlled avalanche diode BAX12

Fig.8 Reverse current as a function of continuous

reverse voltage.

handbook, halfpage

100 200

600

0

200

400

MBG698

150

(1) (4)

I

R

(mA)

VR (V)

(2) (3)

Reverse voltages higher than the VR ratings are allowed, provided:
a. The transient energy ≤ 7.5 mJ at P

RRM

≤30 W; Tj=25°C;

the transient energy ≤ 5 mJ at P

RRM

= 120 W; Tj=25°C (see Fig.7).

b. T ≥ 50 ms; δ≤0.01 (rectangular waveform) (see Fig.9).

δ≤0.02 (triangular waveform) (see Fig.9).

With increasing temperature, the maximum permissible transient
energy must be decreased by 0.03 mJ/K.

(1) T

j

=25°C; minimum values.
(2) Tj= 175 °C; minimum values.
(3) Tj=25°C; maximum values.
(4) Tj= 175 °C; maximum values.

Fig.9 Peak reverse voltage and current test

pulses.

handbook, halfpage

MBG699

V

R

I

R

T

time

time

t (rectangular waveform)

t

(triangular

waveform)

δ =

t

T

1996 Sep 17 7

Philips Semiconductors Product specification

Controlled avalanche diode BAX12

Fig.10 Reverse recovery voltage test circuit and waveforms.

Input signal: reverse pulse rise time tr= 0.6 ns; reverse pulse duration tp= 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr= 0.35 ns.
Circuit capacitance: C ≤ 1 pF (oscilloscope input capacitance + parasitic capacitance).

(1) IR= 3 mA.

handbook, full pagewidth

t

rr

(1)

I

F

t

output signal

t

r

t

t

p

10%

90%

V

R

input signal

V = V I x R

RF S

R = 50SΩ

I

F

D.U.T.

R = 50iΩ

SAMPLING

OSCILLOSCOPE

MGA881

1996 Sep 17 8

Philips Semiconductors Product specification

Controlled avalanche diode BAX12

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Fig.11 SOD27 (DO-35).

Dimensions in mm.

dbook, full pagewidth

MLA428 - 1

25.4 min

4.25
max

1.85
max

25.4 min

0.56
max