Page 1
Silicon Switching Diodes BAW 79 A
… BAW 79 D
● For high-speed switching
● High breakdown voltage
● Common cathode
Type Ordering Code
Marking
Pin Configuration
Package
1)
(tape and reel)
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
GE
GF
GG
GH
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
SOT-89
Maximum Ratings per Diode
Parameter Symbol Values Unit
BAW BAW BAWBAW
Reverse voltage V
Peak reverse voltage VRM 50
R 50 V
100
100
200
200
400
400
Forward current IF 1A
Peak forward current IFM 1
Surge forward current
µs
t= 1
Total power dissipation
S = 115 ˚C
T
I
FS 10
P
tot 1W
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 175 K/W
Junction - soldering point Rth JS ≤ 35
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Page 2
Electrical Characteristics per Diode
I
I
R
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BAW 79 A
… BAW 79 D
UnitValuesParameter Symbol
min. typ. max.
(BR) = 100 µA
Forward voltage
F = 1 A
F = 2 A
R = VRmax
V
1)
VR = VRmax, TA = 150 ˚C
AC characteristics
R = 0 V, f = 1 MHz
V
F = 200 mA, IR = 200 mA,
L = 100 Ω
measured at I
R = 20 mA
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
(BR)
V
50
100
200
400
V
F
–
–
R
I
–
–
C
D –10–
–
–
–
–
–
–
–
–
–
–
–
–
1.6
2
1
50
trr –1–
VBreakdown voltage
V
µAReverse current
pFDiode capacitance
µsReverse recovery time
Test circuit for reverse recovery time
Pulse generator: t
1)
Pulse test: tp≤ 300 µs, D = 2 %.
p = 5 µs, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns
t
≤ 1pF
C
Semiconductor Group 2
Page 3
BAW 79 A
… BAW 79 D
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
Forward current IF = f (VF)
A = 25 ˚C
T
Peak forward current I
A = 25 ˚C
T
FM = f (t)
Reverse current I
R = VRmax
V
R = f (TA)
Semiconductor Group 3
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