Page 1
Silicon Switching Diode Array
g
BAV 70
• For high-speed switching applications
3
• Common cathode
1
VPS05161
3
1
Type Marking Pin Configuration Package
BAV 70 A4s 1 = A1 2 = A2 3 = C1/2 SOT-23
Maximum Ratings
Parameter ValueSymbol Unit
V
R
Peak reverse voltage 70
Surge forward current, t = 1 µs I
Total power dissipation, TS = 35 °C P
V
I
T
T
RM
F
FS
tot
j
st
2
EHA07004
70
200 mAForward current
250 mW
150Junction temperature °C
-65 ... 150Storage temperature
VDiode reverse voltage
A4.5
2
Thermal Resistance
1)
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
R
R
thJA
thJS
≤ 600
≤ 460
K/WJunction - ambient
Oct-07-19991
Page 2
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAV 70
Parameter
DC characteristics
= 100 µA
I
(BR)
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
F
= 70 V
V
R
Reverse current
= 25 V, TA = 150 °C
V
R
= 75 V
V
R
V
V
I
I
R
R
(BR)
F
ValuesSymbol Unit
typ. max.min.
70Breakdown voltage
-
-
-
-
-
-
-
-
715
855
1000
1250
2.5- -
-
-
-
-
30
50
V- -
mVForward voltage
µAReverse current
AC characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
I
= 10 mA, IR = 10 mA, RL = 100 Ω,
F
measured at I
= 1mA
R
Test circuit for reverse recovery time
D.U.T.
Ι
F
Oscillograph
Pulse generator: tp = 100ns, D = 0.05,
C
D
- -
EHN00019
t
rr
Oscillograph: R = 50Ω, tr = 0.35ns,
1.5- -
pF
nsReverse recovery time
6
t
= 0.6ns, Ri = 50Ω
r
C ≤ 1pF
Oct-07-19992
Page 3
BAV 70
Forward current I
= f (TA*;TS)
F
* Package mounted on epoxy
300
Ι
F
mA
200
T
AS
100
0
0
50 100 ˚C 150
Reverse current I
EHB00064BAV 70
BAV 70 EHB00065
5
10
= f (TA)
R
nA
Ι
R
= 70 V
V
4
10
5
3
10
10
5
2
T
max.
typ.
R
70V
25V
5
1
10
T ; T
A
0 50 100 150
S
T
˚C
A
Forward current I
T
= 25°C
A
150
Ι
F
mA
100
50
0
0
= f (VF)
F
EHB00066BAV 70
maxtyp
0.5 1.0 V 1.5
V
F
Peak forward current I
T
= 25°C
A
2
10
Ι
FM
A
1
10
0
10
-1
10
=D
-2
10
-6
-5
1010
10
-4
t
p
T
10
= f (tp)
FM
-3
= 0.005D
0.01
0.02
0.05
0.1
0.2
t
10
EHB00067BAV 70
p
T
10
-1
s010
-2
t
Oct-07-19993
Page 4
BAV 70
Forward voltage V
BAV 70 EHB00068
1.0
V
V
F
0.5
Ι
= 100 mA
F
0.1 mA
10 mA
1 mA
= f (TA)
F
0
0 50 100 150
T
˚C
A
Oct-07-19994
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