Datasheet BAV 199 INF Datasheet

BAV199

Silicon Low Leakage Diode Array



Low-leakage applications



Medium speed switching times



Connected in series

3

1

2

EHA07005

3

1

VPS05161

Type Marking Pin Configuration Package

BAV199 JYs

1 = A1 2 = C2 3 = C1/A2

SOT23

Maximum Ratings Parameter

Diode reverse voltage V Peak reverse voltage- V Forward current I Surge forward current, t = 1 µs I Total power dissipation

= 31 °C

T

S

Junction temperature T

Symbol Value Unit

70 V 70

200 mA

4.5 A

330 mW

150 °C

P

R

RM F FS

tot

j

2

Storage temperature T

Thermal Resistance Parameter

Junction - soldering point

1

For calculation of R

thJA

1)

please refer to Application Note Thermal Resistance

1

stg

-65 ... 150

Symbol Value Unit

R

thJS



360

K/W

Aug-20-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified

BAV199

Parameter

DC Characteristics

Breakdown voltage

= 100 µA

I

(BR)

Reverse current

= 70 V

V

R

= 70 V, TA = 150 °C

V

R

Forward voltage

= 1 mA

I

F

= 10 mA

I

F

= 50 mA

I

F

= 150 mA

I

F

AC Characteristics

Diode capacitance-

V

= 0 V, f = 1 MHz

R

Symbol Values Unit

min. typ. max.

V

I

V

C

R

(BR)

F

T

70 - - V

-

5

80

900 1000 1100 1250

nA

mV

- 2 - pF

Reverse recovery time

I

= 10 mA, IR = 10 mA, measured at I

F

R

= 100

L



R =

1 mA,

t

rr

- 0.5 3 µs

Test circuit for reverse recovery time

D.U.T.

Ι

F

Oscillograph

EHN00019

Puls generator: tp = 10µs, D = 0.05,

t

= 0.6ns, Ri = 50

r

Oscillograph: R = 50 , tr = 0.35ns,

C



1pF



2

Aug-20-2001

BAV199

Reverse current I

V

= 70 V

R

BAV 199 EHB00085

2

10

Ι

nA

R

1

10

0

10

-1

10

-2

10

-3

10

0 50 100 150

=  (TA)

R

max

typ

Forward Voltage V I

= Parameter

F

BAV 199 EHB00088

1.5

=



(T

F

)

A

V

F

=

Ι

150 mA

1.0

F

50 mA 10 mA

1 mA

0.1 mA

0.5

˚C

T

A

0

0 50 100 150

˚C

T

A

Forward current I

300

mA

200

IF

150

100

50

0

0 15 30 45 60 75 90 105 120

=  (TS)

F

°C

TS

150

Forward current I T

= 25 °C

A

150

Ι

F

mA

100

50

0

=  (VF)

F

EHB00086BAV 199

maxtyp

0.5 1.0 V 1.5

V

F

3

Aug-20-2001

BAV199

Peak forward current I

T

= 25 °C

A

BAV 199

2

10

Ι

FM

A

1

10

0

10

-1

10

-2

10

-6

10

t

T

-5

10

-4

=  (tp)

FM

D = 0.005

0.01

0.02

0.05

0.1

0.2

=pD

10-310

EHB00087

t

p

T

-2

10

-1

100s

t

4

Aug-20-2001