Datasheet BAV21, BAV20, BAV18, BAV17, BAV19 Datasheet (Vishay Telefunken)

Silicon Epitaxial Planar Diodes

g

g

Applications

General purposes

BAV17...BAV21

Vishay Telefunken

94 9367

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit

Peak reverse voltage BAV17 V

BAV18 V
BAV19 V
BAV20 V
BAV21 V

Reverse voltage BAV17 V

BAV18 V
BAV19 V
BAV20 V

BAV21 V
Forward current I
Peak forward surge current tp=1s, Tj=25°C I
Forward peak current f=50Hz I
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient l=4mm, TL=constant R

thJA

RRM
RRM
RRM
RRM
RRM

R
R
R
R
R

F

FSM

FM

stg

j

25 V

60 V
120 V
200 V
250 V

20 V

50 V
100 V
150 V
200 V
250 mA

1 A
625 mA
175

–65...+175

350 K/W

°

C

°

C

Document Number 85543
Rev. 2, 01-Apr-99 1 (4)

www.vishay.de • FaxBack [phone]

BAV17...BAV21

g

R

m

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=20V BAV17 I

VR=50V BAV18 I
VR=100V BAV19 I
VR=150V BAV20 I
VR=200V BAV21 I
Tj=100°C, VR= 20V BAV17 I
Tj=100°C, VR= 50V BAV18 I
Tj=100°C, VR=100V BAV19 I
Tj=100°C, VR=150V BAV20 I
Tj=100°C, VR=200V BAV21 I

Breakdown voltage IR=100mA, tp/T=0.01, BAV17 V

tp=0.3ms

Diode capacitance VR=0, f=1MHz C
Differential forward resistance IF=10mA r
Reverse recovery time IF=IR=30mA, iR=3mA,

R

=100

W

L

BAV18 V
BAV19 V
BAV20 V
BAV21 V

F
R
R
R
R
R
R
R
R
R
R

(BR)
(BR)
(BR)
(BR)
(BR)

D

f

t

rr

1 V
100 nA
100 nA
100 nA
100 nA
100 nA

15
15
15
15
15

m
m
m
m
m

25 V

60 V
120 V
200 V
250 V

1.5 pF
5

50 ns

A
A
A
A
A

W

Characteristics (Tj = 25_C unless otherwise specified)

F

I – Forward Current ( mA )

94 9085

1000

Tj=25°C

100

10

1

0.1
0 0.4 0.8 1.2 1.6

VF – Forward Voltage ( V )

Figure 2. Forward Current vs.

Forward Voltage

m

R

I – Reverse Current ( A )

94 9084

1000

100

Scattering Limit

10

1

0.1

0.01
0 40 80 120 160

Tj – Junction Temperature ( °C )

Figure 1. Reverse Current vs.

Junction Temperature

VR=V

RRM

200

Scattering Limit

2.0

www.vishay.de • FaxBack [phone] Document Number 85543

Rev. 2, 01-Apr-992 (4)

1000

W

100

Tj=25°C

10

f

r – Differential Forward Resistance ( )

1

0.1 1 10

94 9089

IF – Forward Current ( mA )

Figure 3. Differential Forward Resistance vs.

Forward Current

BAV17...BAV21

Vishay Telefunken

100

Dimensions in mm

technical drawings
according to DIN
specifications

94 9366

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35
Weight max. 0.3g

∅ 1.7 max.

Cathode Identification

3.9 max.26 min.

∅ 0.55 max.

26 min.

Document Number 85543
Rev. 2, 01-Apr-99 3 (4)

www.vishay.de • FaxBack [phone]

BAV17...BAV21

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

www.vishay.de • FaxBack [phone] Document Number 85543

Rev. 2, 01-Apr-994 (4)