Datasheet BAV103, BAV100, BAV102, BAV101 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

1/3 page (Datasheet)

M3D054

BAV100 to BAV103

General purpose diodes

Product specification
Supersedes data of April 1996

1996 Sep 17

Philips Semiconductors Product specification

General purpose diodes BAV100 to BAV103

FEATURES

• Small hermetically sealed glass
SMD package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 50 V , 100 V, 150 V and 200 V
respectively

• Repetitive peak reverse voltage:
max. 60 V , 120 V, 200 V and 250 V
respectively

• Repetitive peak forward current:
max. 625 mA.

APPLICATIONS

• Switching in industrial equipment
e.g. oscilloscopes, digital
voltmeters and video output stages
in colour television.

DESCRIPTION

The BAV100 to BAV103 are switching diodes fabricated in planar technology,
and encapsulated in small hermetically sealed glass SOD80C SMD packages.

handbook, 4 columns

Cathode indicated by green band.

ka

MAM061

Fig.1 Simplified outline (SOD80C) and symbol.

1996 Sep 17 2

Philips Semiconductors Product specification

General purpose diodes BAV100 to BAV103

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

R

I

F

I

FRM

I

FSM

P

tot

T

stg

T

j

repetitive peak reverse voltage

BAV100 − 60 V
BAV101 − 120 V
BAV102 − 200 V
BAV103 − 250 V

continuous reverse voltage

BAV100 − 50 V
BAV101 − 100 V
BAV102 − 150 V

BAV103 − 200 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 9A
t = 100 µs − 3A
t=1s − 1A

total power dissipation T

=25°C; note 1 − 400 mW

amb

storage temperature −65 +175 °C
junction temperature − 175 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 17 3

Philips Semiconductors Product specification

General purpose diodes BAV100 to BAV103

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

t

rr

forward voltage see Fig.3

I

= 100 mA − 1.0 V

F

I

= 200 mA − 1.25 V

F

reverse current see Fig.5

BAV100 V

BAV101 V

BAV102 V

BAV103 V

=50V − 100 nA

R

V

= 50 V; Tj= 150 °C − 100 µA

R

= 100 V − 100 nA

R

V

= 100 V; Tj= 150 °C − 100 µA

R

= 150 V − 100 nA

R

= 150 V; Tj= 150 °C − 100 µA

V

R

= 200 V − 100 nA

R

V

= 200 V; Tj= 150 °C − 100 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 5pF
reverse recovery time when switched from IF= 30 mA to

− 50 ns
IR= 30 mA; RL= 100 Ω;
measured at IR= 3 mA; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 375 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 17 4

Philips Semiconductors Product specification

General purpose diodes BAV100 to BAV103

GRAPHICAL DATA

amb

MBH278

(oC)

300

handbook, halfpage

I

F

(mA)

200

100

0

0 100 200

Device mounted on an FR4 printed-circuit board.

T

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

600

handbook, halfpage

I

F

(mA)

400

200

0

012

(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (2) (3)

MBG459

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG703

10

2

10

3

10

tp (µs)

4

10

1996 Sep 17 5

Philips Semiconductors Product specification

General purpose diodes BAV100 to BAV103

3

10

handbook, halfpage

I

R

(µA)

2

10

10

1

−1

10

−2

10

0 100

VR=V
Solid line; maximum values.
Dotted line; typical values.

Rmax

.

Tj (

MGD009

o

C)

Fig.5 Reverse current as a function of junction

temperature.

200

1.6

handbook, halfpage

C

d

(pF)

1.4

1.2

1.0

0.8
01020

f = 1 MHz; Tj=25°C.

MGD005

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

300

handbook, halfpage

V

R

(V)

200

100

0

0 200

(1) BAV103.
(2) BAV102.
(3) BAV101.
(4) BAV100.

(1)

(2)

(3)

(4)

100

T

amb

MBG700

o

(

C)

Fig.7 Maximum permissible continuous reverse

voltage as a function of ambient
temperature.

1996 Sep 17 6

Philips Semiconductors Product specification

General purpose diodes BAV100 to BAV103

handbook, full pagewidth

R = 50SΩ

V = V I x R

RF S

(1) IR= 1 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.8 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

1996 Sep 17 7

Philips Semiconductors Product specification

General purpose diodes BAV100 to BAV103

PACKAGE OUTLINE

handbook, full pagewidth

1.60

O

1.45

0.3 0.3

3.7

3.3

MBA390 - 2

Dimensions in mm.

Fig.9 SOD80C.

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Sep 17 8