Datasheet BAT60B Datasheet (Siemens)

BAT 60B

Semiconductor Group

Sep-04-19981

Silicon Schottky Diode

• Rectifier Schottky diode for mobile communication

• Low voltage high inductane

• For power supply

• For clamping and proptection in low voltage

application

• For detection and step-up-conversion

VPS05176

1

2

ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package

BAT 60B blue/5 Q62702-A1189 1 = C 2 = A SOD-323

Maximum Ratings
Parameter Symbol Value Unit

Diode reverse voltage

V

R

10 V

Forward current

I

F

3 A

Surge forward current (t< 100µs)

I

FSM

5 mA

Total power dissipation,

T

S

= 28 °C

P

tot

1350 mW

Junction temperature

T

j

150 °C

Storage temperature

T

st

g

- 55 ...+150

Maximum Ratings

Junction - ambient

1)

R

thJA

≤ 160

K/W

Junction - soldering point

R

thJS

≤ 90

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 1998-11-01

BAT 60B

Semiconductor Group

Sep-04-19982

Electrical Characteristics at

T

A

= 25 °C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC characteristics

Reverse current

V

R

= 5 V

V

R

= 8 V

-

-

-

-

µA

5

10

I

R

Reverse current

V

R

= 5 V,

T

A

= 80 °C

V

R

= 8 V,

T

A

= 80 °C

I

R

-

-

100
410

-

-

Forward voltage

I

F

= 10 mA

I

F

= 100 mA

I

F

= 1000 mA

V

F

-

-

-

0.24

0.3

0.4

-

-

-

V

AC characteristics

C

T

- 20 - pFDiode capacitance

V

R

= 5 V, f = 1 MHz

Semiconductor Group 2 1998-11-01

BAT 60B

Semiconductor Group

Sep-04-19983

Forward current

I

F

= f (

T

A

*;

T

S

)

* Package mounted on epoxy

0 20 40 60 80 100 120

°C

150

TA,T

S

0

400

800

1200

1600

2000

2400

mA

3200

I

F

T

S

T

A

Reverse current

I

R

= f (

T

A

)

V

R

= 8V

-20 0 20 40 60 80 100 120

°C

160

T

A

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

A

I

R

Permissible Pulse Load

R

thJS

= f(

t

p

)

10

-6

10

-5

10

-4

10

-3

10

-2

10

0

s

t

p

-1

10

0

10

1

10

2

10

K/W

R

thJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005
D = 0

Permissible Pulse Load

I

Fmax

/

I

FDC

= f(

t

p

)

10

-6

10

-5

10

-4

10

-3

10

-2

10

0

s

t

p

0

10

1

10

2

10

-

I

Fmax

/

I

FDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Semiconductor Group 3 1998-11-01