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Elektronische Bauelemente
FEATURES
Low Turn-on Voltage
·
Fast Switching
·
PN Junction Guard Ring for Transient and
·
ESD Protection
MECHANICAL DATA
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Polarity: See Diagrams Below
·
Weight: 0.016 grams (approx.)
·
Mounting Position: Any
·
BAT54TW / BAT54ADW /BAT54CDW
BAT54SDW/ BAT54BRW
Surface Mount Schottky Barrier Diode Array
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
C
B
H
K
J
4
5
6
O
3
2
1
D
L
F
SOT-363
Dim Min Max
0.10 0.30
A
1.15 1.35
B
2.00 2.20
C
0.65 Nominal
D
0.30 0.40
F
1.80 2.20
M
H
J
K
L
M
a
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
0° 8°
All Dimensions in mm
BAT54TW Marking: KLA BAT54ADW Marking: KL6
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted)
BAT54CDW Marking: KL7
Rating Symbol Value Unit
Reverse Voltage V
Forward Power Dissipation
@ TA = 25°C
R
P
F
Derate above 25°C
Forward Current (DC) I
Junction Temperature T
Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (EACH DIODE)
A
F
J
stg
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
Reverse Recovery Time
(IF = IR = 10 mAdc, I
= 1.0 mAdc) Figure 1
R(REC)
Forward Voltage (IF = 1.0 mAdc) V
Forward Voltage (IF = 10 mAdc) V
Forward Current (DC) I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current (t < 1.0 s) I
BAT54SDW Marking: KL8 BAT54BRW Marking:KLB
30 Volts
225
1.8
200 Max mA
125 Max °C
–55 to +150 °C
(BR)R
T
R
F
F
F
t
rr
F
F
F
FRM
FSM
30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns
— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc
mW
mW/°C
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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+10 V
Elektronische Bauelemente
820
Ω
2 k
I
100
0.1 µF
F
µ
H
0.1
BAT54TW / BAT54ADW /BAT54CDW
BAT54SDW/ BAT54BRW
Surface Mount Schottky Barrier Diode Array
µ
F
t
t
r
p
10%
t
I
F
t
rr
t
50
Generator
100
10
125°C
1.0
, Forward Current (mA)
F
I
0.1
0.0 0.1
Ω
Οutput
Pulse
DUT
50 Ω Input
Sampling
Oscilloscope
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
V
R(peak)
R
90%
Input Signal
is equal to 10 mA.
I
R
(IF = IR = 10 mA; measured
Figure 1. Recovery Time Equivalent Test Circuit
1000
TA = 150°C
100
A)
150°C
85°C
25°C
0.2 0.3 0.4
VF, Forward Voltage (V)
–40°C
–55°C
0.5
0.6
µ
, Reverse Current (
R
I
0.001
10
1.0
0.1
0.01
0
5101520
VR, Reverse Voltage (V)
Figure 2. Forward VoltageFigure 3. Leakage Current
I
R(REC)
Output Pulse
at I
R(REC)
= 1 mA
= 1 mA)
TA = 125°C
TA = 85°C
TA = 25°C
25
30
14
12
10
8
6
, Total Capacitance (pF)
4
T
C
2
0
0
51015 30
VR, Reverse Voltage (V)
2520
Figure 4. Total Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2
of 2
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