
BAT54SL
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
Rating
Reverse Voltage V
Forward Power Dissipation
@ T
= 25°C
A
Derate above 25°C
Forward Current (DC) I
Non−Repetitive Peak Forward Current
t
< 10 msec
p
Square pulse = 1 sec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Dut y Cycle = 66%
Junction Temperature T
Storage Temperature Range T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= 25°C unless otherwise noted)
A
Symbol Value Unit
P
I
FSM
I
FRM
R
F
F
J
stg
= 10 mAdc
F
30 V
225
1.8
200 Max mA
600
1.0
300
−55 to 150 °C
−55 to +150 °C
mW
mW/°C
mA
A
mA
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30 VOLT
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
SOT−23
CASE 318
STYLE 11
1
ANODE
3
CATHODE/ANODE
MARKING DIAGRAM
LD3M G
G
1
LD3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2
CATHODE
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 16
1
ORDERING INFORMATION
Device Package Shipping
BAT54SLT1G SOT−23
(Pb−Free)
SBAT54SLT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
3,000 / Tape & Ree
3,000 / Tape & Ree
Publication Order Number:
BAT54SLT1/D
†

BAT54SL
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage
= 10 A)
(I
R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage
(V
= 25 V)
R
Forward Voltage
(I
= 0.1 mA)
F
(IF = 1.0 mA)
(IF = 10 mA)
(I
= 30 mA)
F
= 100 mA)
(I
F
Reverse Recovery Time
(I
= IR = 10 mAdc, I
F
+10 V
2 k
100 H
0.1 F
= 1.0 mAdc, Figure 1)
R(REC)
I
F
= 25°C unless otherwise noted) (EACH DIODE)
A
Symbol Min Typ Max Unit
V
(BR)R
C
T
I
R
V
F
30 − −
− 7.6 10
− 0.5 2.0
−
−
−
−
−
t
rr
0.1 F
− − 5.0
t
t
r
p
10%
V
pF
Adc
V
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
ns
I
T
F
t
rr
T
50 OUTPUT
PULSE
GENERATOR
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
V
R
90%
I
R
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
= 1 mA
i
R(REC)
OUTPUT PULSE
= IR = 10 mA; measure
(I
F
at i
R(REC)
= 1 mA)
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2

100
10
1.0
BAT54SL
125°C
85°C
150°C
, FORWARD CURRENT (mA)
F
I
0.1
0.0 0.1
1000
TA = 150°C
100
10
1.0
0.1
, REVERSE CURRENT (A)
0.01
R
I
0.001
0
510
25°C
−40°C
−55°C
0.2 0.3 0.4
, FORWARD VOLTAGE (VOLTS)
V
F
Figure 2. Forward Voltage
15
V
, REVERSE VOLTAGE (VOLTS)
R
20
Figure 3. Leakage Current
0.5
TA = 125°C
TA = 85°C
TA = 25°C
25
0.6
30
14
12
10
8
6
4
, TOTAL CAPACITANCE (pF)
T
2
C
0
0
51015 30
, REVERSE VOLTAGE (VOLTS)
V
R
2520
Figure 4. Total Capacitance
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3

A
A1
BAT54SL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D
3
E
12
b
e
SEE VIEW C
H
E
c
0.25
q
L
L1
VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
q
STYLE 11:
PIN 1. ANODE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
E
0 −−− 10 0 −−− 10
2. CATHODE
3. CATHODE−ANODE
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
°°°°
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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0.037
SCALE 10:1
2.0
0.079
ǒ
inches
mm
Ǔ
UBLICATION ORDERING INFORMATION
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BAT54SLT1/D
4