Datasheet BAT14-099 Datasheet (Siemens) [en, tl]

Silicon Dual Schottky Diode BAT 14-099

● DBS mixer application to 12 GHz

● Low noise figure

● Medium barrier type

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

Pin Configuration

Package

1)

(tape and reel)

BAT 14-099 Q62702-A3461S9 SOT-143

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage VR 4V
Forward current I

F 90 mA

Power dissipation, TS ≤ 55 ˚C Ptot 100 mW
Storage temperature range T
Operating temperature range T

stg – 55 … + 150 ˚C
op – 55 … + 150

Thermal Resistance

Junction – ambient

2)

Rth JA ≤ 1090 K/W

Junction – soldering point Rth JS ≤ 930

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.

Semiconductor Group 1

02.96

Electrical Characteristics per Diode

I

I
I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BAT 14-099

Parameter Symbol

Breakdown voltage

R = 5 µA

Forward voltage

F = 1 mA
F = 10 mA

Forward voltage matching

F = 10 mA

Diode capacitance

R = 0, f= 1 MHz

V

Forward resistance

F = 10 mA / 50 mA

V

BR V4––

F

V

∆VF mV––10

C

T pF– – 0.35

R

F Ω– 5.5 –

min. typ.

–
–

0.43

0.55

UnitValues

max.

–
–

Semiconductor Group 2

BAT 14-099

Forward current IF = f (VF)

Forward current IF = f (TS; TA*)

*Package mounted on alumina

Reverse current I

R = f (VR)

Diode capacitance C

f = 1 MHz

T = f (VR)

Semiconductor Group 3

S11-Parameters

Typical impedance characteristics (with external bias I and Z

BAT 14-099

0 = Ω)

fI= 0.02 mA

GHz MAG ANG

1
2
3
4
5
6
7
8
9
10
11
12

0.99

0.96

0.95

0.93

0.93

0.91

0.89

0.88

0.86

0.83

0.82

0.80

– 15.89
– 30.40
– 45.30
– 59.60
– 74.80

– 89.50
– 106.60
– 123.40
– 143.20
– 166.10

168.10

138.20

I= 0.05 mA
MAG ANG

0.91

0.88

0.87

0.86

0.85

0.83

0.80

0.79

0.76

0.72

0.71

0.72

– 16.40
– 30.80
– 46.20
– 61.60
– 77.10

– 93.10
– 110.50
– 129.40
– 150.20
– 174.10

158.10

127.20

I= 0.1 mA
MAG ANG

0.79

0.76

0.75

0.73

0.72

0.69

0.66

0.64

0.62

0.58

0.59

0.60

– 16.40
– 31.09
– 47.30
– 62.40
– 78.70

– 95.70
– 112.70
– 132.40
– 154.20
– 179.10

153.80

121.20

I= 0.2 mA
MAG ANG

0.57

0.56

0.55

0.53

0.51

0.48

0.45

0.43

0.40

0.37

0.39

0.44

– 16.60
– 30.70
– 47.00
– 62.40
– 78.70

– 95.70
– 114.00
– 135.40
– 161.20

171.10

140.80

108.20

I= 0.5 mA
MAG ANG

0.13

0.13

0.11

0.10

0.07

0.04

0.02

0.06

– 17.30
– 28.40
– 43.99
– 54.40
– 80.70

– 102.30

158.01

118.40

0.12

0.19

0.25

0.33

96.20

72.10

62.60

49.20

S11 = f (f,I)

Semiconductor Group 4