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查询BAT 14-077D供应商
Silicon Dual Flip Chip Schottky Diode BAT 14-077D
Preliminary Data Sheet
• Dual Schottky medium Barrier Mixer Diode
• For W-band application up to 80 GHz
ESD: Electrostatic discharge sensitive device,
EHT09236
observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 14-077D – Q62702-D1354 – – – FLIP CHIP
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
Forward current
Total power dissipation (
T
= 25 °C) P
S
Junction temperature
Operating temperature range
Storage temperature
V
I
T
T
T
F
R
tot
j
op
stg
3V
25 mA
20 mW
150 °C
– 40 … + 150 °C
– 55 … + 150 °C
Data Sheet 1 2001-01-01
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GaAs Components
BAT 14-077D
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
DC Characteristics
Breakdown voltage
Forward voltage
V
V
(BR)
F
3–– V I
= 100 µA
(BR)
– 0.4 0.5 V IF = 100 µA
AC Characteristics
Diode capacitance
Forward resistance
1)
Simulated values test conditions t.b.f.
1)
C
R
T
F
– 30 – fF VR = 0 V
– 710Ω IF = 10 mA
Data Sheet 2 2001-01-01
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GaAs Components
Chip Layout
FLIP CHIP
420 µm
550 µm
BAT 14-077D
250 µm
125 µm
Gold-bumps
(height: 10 µm)
Nitride-passivation
EHT09237
Sorts of Packing
Package outlines for tubes, trays etc. are contained in
our Data Book “Package Information”.
Dimensions in mm
Data Sheet 3 2001-01-01
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