
DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D121
BAS86
Schottky barrier diode
Product specification
Supersedes data of 1996 Mar 20
1996 Oct 01

Philips Semiconductors Product specification
Schottky barrier diode BAS86
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
package.
APPLICATIONS
• Ultra high-speed switching
handbook, halfpage
ka
• Voltage clamping
• Protection circuits
MAM190
• Blocking diodes.
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
−
continuous forward current −
average forward current
repetitive peak forward current tp≤ 1 sec.; δ≤0.5
see Fig.2
−
−
non-repetitive peak forward current tp=10ms 5 A
storage temperature
junction temperature
operating ambient temperature
−65
−
−65
50 V
200 mA
200 mA
500 mA
+150 °C
125 °C
+125 °C
1996 Oct 01 2

Philips Semiconductors Product specification
Schottky barrier diode BAS86
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
t
rr
C
d
Note
1. Pulsed test: t
forward voltage see Fig.3
I
= 0.1 mA
F
=1mA
I
F
=10mA
I
F
I
=30mA
F
I
= 100 mA
F
reverse current VR= 40 V; see Fig.4; note 1
reverse recovery time when switched from IF= 10 mA to IR= 10 mA;
RL= 100 Ω; measured at IR= 1 mA; see Fig.6
diode capacitance f = 1 MHz; VR= 1 V; see Fig.5
= 300 µs; δ = 0.02.
p
300 mV
380 mV
450 mV
600 mV
900 mV
5
µA
4ns
8pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 320 K/W
Note
1. Refer to SOD80 standard mounting conditions.
1996 Oct 01 3

Philips Semiconductors Product specification
Schottky barrier diode BAS86
GRAPHICAL DATA
250
handbook, halfpage
I
F(AV)
(mA)
200
150
100
50
0
0 50 100 150
Fig.2 Derating curve.
MRA540
o
T ( C)
amb
3
10
handbook, halfpage
I
F
(3)(2)(1)
(mA)
2
10
10
1
1
10
(3)(2)(1)
VF (V)
(1) T
(2) T
(3) T
amb
amb
amb
= 125°C.
=85°C.
=25°C.
Fig.3 Forward current as a function of forward
voltage; typical values.
MSA892
1.20.80.40
handbook, halfpage
I
R
(nA)
4
10
3
10
2
10
(1)
(2)
5
10
10
(3)
1
−1
10
(1) T
(2) T
(3) T
amb
amb
amb
10 20 30 40
=85°C.
=25°C.
= −40°C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
MGC686
VR (V)
12
handbook, halfpage
C
d
MGC687
(pF)
8
4
500
0
050
10 20 30 40
VR (V)
f =1 MHz.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1996 Oct 01 4

Philips Semiconductors Product specification
Schottky barrier diode BAS86
andbook, halfpage
I
F
dI
F
dt
t
10%
Q
r
90%
I
R
t
f
MRC129 - 1
Fig.6 Reverse recovery definitions.
1996 Oct 01 5

Philips Semiconductors Product specification
Schottky barrier diode BAS86
PACKAGE OUTLINE
handbook, full pagewidth
1.60
O
1.45
0.3 0.3
Dimensions in mm.
Cathode indicated by a grey band.
3.7
3.3
MBA390 - 2
Fig.7 SOD80C.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 01 6