Datasheet BAS70-07S Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

alfpage

MBD128

BAS70-07S

Schottky barrier double diode

Product specification
Supersedes data of 1998 Feb 06

1998 Jul 10

Philips Semiconductors Product specification

Schottky barrier double diode BAS70-07S

FEATURES

• Low forward voltage

• Guard ring protected

• Small SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier double diode
with an integrated guard ring for
stress protection.

Two separate dies are encapsulated
in a SOT363 small SMD plastic
package.

PINNING

PIN DESCRIPTION

1 anode (a

)

1

2,5 not connected

3 cathode (k
4 anode (a
6 cathode (k

654

123

Top view

Marking code: 77.

)

2

)

2

)

1

handbook, 2 columns

MSA370

Fig.1 Simplified outline (SOT363) and symbol.

14

63

MBK149

1998 Jul 10 2

Philips Semiconductors Product specification

Schottky barrier double diode BAS70-07S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
I

F

I

FRM

I

FSM

T
T
T

R

stg
j
amb

continuous reverse voltage
continuous forward current −

repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp< 10 ms
storage temperature
junction temperature
operating ambient temperature

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

−

−

−

−65

−

−65

70 V
70 mA
70 mA
100 mA
+150 °C
150 °C
+150 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Per diode

V

F

I

R

τ charge carrier life time (Krakauer

forward voltage see Fig.2

I

=1mA

F

=10mA

I

F

I

=15mA

F

reverse current VR= 50 V; note 1; see Fig.3

= 70 V; note 1; see Fig.3

V

R

=5mA

I

F

410 mV
750 mV
1V
100
10

nA
µA

100 ps

method)

C

d

diode capacitance f = 1 MHz; VR= 0; see Fig.5

2pF

Note

1. Pulsed test: t

= 300 µs; δ = 0.02.

p

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 416 K/W

Note

1. Refer to SOT363 standard mounting conditions.

1998 Jul 10 3

Philips Semiconductors Product specification

Schottky barrier double diode BAS70-07S

GRAPHICAL DATA

2

10

I

F

(mA)

10

1

1

10

(1) (4)(2) (3)

2

10

0 0.2 0.4 0.6 0.8 1

(1) T
(2) T

amb
amb

= 125°C.
=85°C.

(3) T
(4) T

amb
amb

=25°C.
= −40 °C.

MRA803

V (V)

F

Fig.2 Forward current as a function of forward

voltage; typical values.

2

10

I

R

(µA)

10

1

1

10

2

10

3

10

020406080

(1) T
(2) T

amb
amb

= 150 °C.
=85°C.

(3) T

amb

(1)

(2)

(3)

=25°C.

MRA805

V (V)

R

Fig.3 Reverse current as a function of reverse

voltage; typical values.

IF (mA)

MRA802

2

10

3

10

r

diff

2

10

10

1

−1

10

f = 10 kHz.

110

Fig.4 Differential forward resistance as a function

of forward current; typical values.

2

C

d

(pF)

1.5

1

0.5

0

0 20406080

f = 1 MHz.

MRA804

V (V)

R

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

1998 Jul 10 4

Philips Semiconductors Product specification

Schottky barrier double diode BAS70-07S

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT363

D

y

56

pin 1
index

4

132

e

1

e

b

p

wBM

E

H

E

A

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.30

0.25

0.20

0.10

IEC JEDEC EIAJ

2.2

1.8

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT363 SC-88

1998 Jul 10 5

H

E

2.2

2.0

L

p

0.45

0.15

Qywv

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

Schottky barrier double diode BAS70-07S

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jul 10 6

Philips Semiconductors Product specification

Schottky barrier double diode BAS70-07S

NOTES

1998 Jul 10 7

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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 115104/00/03/pp8 Date of release: 1998 Jul 10 Document order number: 9397 75004088