
BAS70-07
®
June 1999 - Ed: 2A
SMALL SIGNAL SCHOTTKY DIODE
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD V O LTAGE DROP
LOW THERMAL RE SISTA NCE
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
FEATURES AND BENE FITS
Low turn-on and high breakdown voltage diodes
intended for
ultrafast switching and UHF detectors in hybrid micro circuits. Packaged in SOT-143, this device is
intended for surface mounting. Its dual independent diodes configuration makes it very interesting for applications where high integration is
searched.
DESCRIPTION
SOT-143
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 70 V
I
F
Continuous forward current 15 mA
I
FSM
Surge non repetitive forward current tp = 10ms 1 A
P
tot
Power Dissipation (note 1) T
amb
= 25°C 310 mW
T
stg
Storage temperature range - 65 to +150
°
C
Tj Maximum operating junction temperature * 150
°
C
TL Maximum temperature for soldering during 10s 260
°
C
Note 1:
Ptot is the total dissipation of both diodes.
ABSOLUTE RATINGS
(limiting values)
K1
K2
A1
A2
K1
A1
K2
A2
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient (*) 400
°
C/W
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
* :
dPtot
dTj
<
1
Rth(j−a
)
thermal runaway condition for a diode on its own heatsink
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Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
V
F
* F orward voltage drop Tj = 25°CI
F
= 1 mA 410 mV
I
F
= 10 mA 750 mV
I
F
= 15 mA 1 V
V
BR
Breakdown voltage Tj = 25°CI
R
= 10 µA70 V
I
R
** Reverse leakage current Tj = 25°CV
R
= 50 V 200 nA
V
R
= 70 V 10
µ
A
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameters Tests Conditions Min. Typ. Max. Unit
C Junction capacitance V
R
= 1 V F = 1 MHz 2 pF
t
rr
Revers e recovery time IF = 10 mA Irr = 1 mA
I
R
= 10 mA RL = 100
Ω
5ns
τ
Effective carrier lifetime I
F
= 5 mA Krakauer method 100 ps
DYNAMIC CHARACTERISTICS
(Tj = 25 °C)
0 1020304050607080
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
PF(av)(W)
IF(av) (mA)
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
T
δ
=tp/T
tp
Fig.1 :
Average forward power dissipation versus
average forward current.
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
IF(mA)
Tamb(°C)
Fig.2 :
Continuous forward current versus ambient
temperature.
Pulse test: * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
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1E-3 1E-2 1E-1 1E+0
0.00
0.05
0.10
0.15
0.20
0.25
0.30
IM(A)
Ta=50°C
Ta=25°C
Ta=100°C
t(s)
I
M
t
δ
=0.5
Fig.3 :
Non repetitive surge peak forward current
versus overload duration (maximum values).
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
1E-3
1E-2
1E-1
1E+0
1E+1
IR(µA)
Tj=25°C
Tj=100°C
VR(V)
Fig.5 :
Reverse leakage current versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
T
δ
=tp/T
tp
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
0 25 50 75 100 125
1E-2
1E-1
1E+0
1E+1
1E+2
IR(µA)
VR=70V
Tj(°C)
Fig.6 :
Reverse leakage current versus junction
temperatur e (typical values).
1 10 100
0.1
1.0
2.0
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig.7 :
Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1E-4
1E-3
1E-2
7E-2
IFM(A)
Tj=100°C
Typical values
Tj=25°C
Maximum values
Tj=25°C
Typical values
VFM(V)
Fig.8 :
Forward voltage drop versus forward
current.
BAS70-07
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PACKAGE ME CHANICAL D AT A
SOT-143
A
L
C
D
E
H
e2
b
b1
e1
A1
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 0.8 1.2 0.0314 0.0472
A1 0.01 0.127 0.0004 0.005
b 0.35 0.6 0.014 0.024
b1 0.55 0.95 0.022 0.037
C 0.085 0.2 0.003 0.008
D 2.8 3.04 0.11 0.12
E 1.2 1.4 0.047 0.055
e1 1.90 Typ. 0.075 Typ.
e2 0.2 Typ. 0.008 Typ.
H 2.1 2.64 0.083 0.103
L 0.55 Typ. 0.022 Typ.
FOOTPRINT DIMENSIONS (millimeters)
Type Marking Package Weight Base qty Delivery mode
BAS70-07 D99 S OT-143 0.01g. 3000 Tape & reel
MARKING
1.92
0.95
2.25
1.1
0.65
0.2
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