Page 1
Silicon Schottky Diodes BAS 70 …
● General-purpose diodes for high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
(tape and reel)
BAS 70
BAS 70-04
BAS 70-05
BAS 70-06
Q62702-A11873s SOT-23
Q62702-A73074s
Q62702-A71175s
Q62702-A77476s
Pin Configuration
Package
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
01.97
Page 2
BAS 70 …
● General-purpose diodes for high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BAS 70-07
Q62702-A84677s
SOT-143
Maximum Ratings per Diode
Parameter Symbol Values Unit
Reverse voltage V
R 70 V
Forward current IF 70 mA
Surge forward current, t ≤ 10 ms IFSM 100
Total power dissipation
BAS 70 T
S ≤ 66 ˚C
BAS 70-04 … TS ≤ 40 ˚C
2)
2)
Ptot 250 mW
Junction temperature Tj 150 ˚C
Operating temperature range T
op – 55 … + 150
1)
Storage temperature range T
stg – 55 … + 150
Thermal Resistance
Junction - ambient
3)
R
th JA
BAS 70
BAS 70-04 …
Junction - soldering point
R
th JS
BAS 70
BAS 70-04 …
1)
For detailed information see chapter Package Outlines.
2)
Max. 450 mW per package.
3)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
K/W
≤ 405
≤ 575
≤ 335
≤ 435
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Electrical Characteristics per Diode
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BAS 70 …
Parameter Symbol
DC characteristics
V
(BR) 70 – –
R = 10 µA
R
I
R = 50 V
V
R = 70 V
V
VF
F = 1 mA
F = 10 mA
F = 15 mA
C
T – 1.6 2
VR = 0, f = 1 MHz
τ – – 100
F = 25 mA
r
f –30–
F = 10 mA, f = 10 kHz
min. typ. max.
–
–
–
–
–
–
–
375
705
880
0.1
10
410
750
1000
UnitValues
VBreakdown voltage
µAReverse current
mVForward voltage
pFDiode capacitance
psCharge carrier life time
ΩDifferential forward resistance
Semiconductor Group 3
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Characteristics per Diode at Tj = 25 ˚C, unless otherwise specified.
BAS 70 …
Forward current IF = f (VF)
Reverse current IR = f (VR)
Diode capacitance CT = f (VR)
f=1 MHz
Differential forward resistance rf = f (IF)
f=10 kHz
Semiconductor Group 4
Page 5
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
BAS 70 …
Semiconductor Group 5
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