Datasheet BAS70-05WFILM, BAS70-04WFILM, BAS70JFILM, BAS70-06WFILM, BAS70WFILM Datasheet (SGS Thomson Microelectronics)

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BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06W
®
May 2000 - Ed: 4B
SMALL SIGNAL SCHOTTKY DIODE
n
n
NEGLIGIBLE SWITCHING LOSSES
n
LOW FORWARD VOLTAGE DROP
n
SURFACE MOUNT DEVICE
FEATURES AND BENEFITS
Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are available.
DESCRIPTION
K
A
A
NC
NC
K
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 70 V
I
F
Continuous forward current 70 mA
I
FSM
Surge non repetitive forward current tp = 10 ms 1 A
P
tot
Power dissipation (note 1) Tamb = 25°C
SOD-323 230 mW SOT-323
T
stg
Maximum storage temperature range - 65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
T
L
Maximum temperature for soldering during 10s 260 °C
Note 1: fordouble diodes, Ptot is the total dissipation of both diodes.
ABSOLUTE RATINGS (limiting values)
BAS70W
A1
A1
A2
A2
K
K
BAS70-05W
A1
K2
A2 K1
A2 K1
K2
A1
BAS70-04W
*:
dPtot
dTj Rth j a
<
−1()
thermal runaway condition for a diode on its own heatsink
K1
K1
K2
K2
A
A
BAS70-06W
BAS70J
A
K
76
SOT-323
SOD-323
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Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°C IR=10µA70V
V
F
* Tj=25°CI
F
= 1mA 410 mV
I
R
** Tj= 25°CV
R
= 50V 100 nA
Pulse test: * tp = 380µs, δ <2%
** tp = 5 ms, δ <2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Test Conditions Min. Typ. Max. Unit
C Tj = 25°C V
R
=0V
F = 1MHz
2pF
τ* Tj=25°CI
F
= 5mA
Krakauer Method
100 ps
* Effective carrier life time.
DYNAMIC CHARACTERISTICS
Symbol Parameters Value Unit
R
th (j-a)
Junction to ambient (*) SOD-323 550 °C/W
SOT-323 °C/W
(*) Mounted on epoxy board, with recommended pad layout.
THERMAL RESISTANCE
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0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1E-4
1E-3
1E-2
7E-2
VFM(V)
IFM(A)
Tj=100°C
Typical values
Tj=25°C
Maximum values
Tj=25°C
Typical values
Fig. 1: Forward voltage drop versus forward current.
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(µA)
Tj=25°C
Tj=100°C
Fig. 2: Reverse leakage current versus reverse voltage applied (typical values).
0 25 50 75 100 125 150
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Tj(°C)
IR(µA)
VR=70V
Fig. 3: Reverse leakage current versus junction temperature (typical values).
1 10 100
0.1
1.0
2.0
VR(V)
C(pF)
F=1MHz Tj=25°C
Fig. 4: Junction capacitance versus reverse voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)/Rth(j-a)
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
T
δ
=tp/T
tp
Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommended pad layout, S(Cu)=35µm).
0 5 10 15 20 25 30 35 40 45 50
300
350
400
450
500
550
600
S(Cu) (mm²)
Rth(j-a) (°C/W)
P=0.2W
Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm).
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PACKAGE MECHANICAL DATA
SOT-323
E
c
L
H
b
D
A
A1
e
θ
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 0.8 1.1 0.031 0.043
A1 0.0 0.1 0.0 0.004
b 0.25 0.4 0.010 0.016
c 0.1 0.26 0.004 0.010 D 1.8 2.0 2.2 0.071 0.079 0.086 E 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 0.026 H 1.8 2.1 2.4 0.071 0.083 0.094 L 0.1 0.2 0.3 0.004 0.008 0.012
θ 0 30° 0 30°
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PACKAGE MECHANICAL DATA
SOD-323
H
b
D
E
A1
A
L
Q1
c
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 1.17 0.046
A1 0 0.1 0 0.004
b 0.25 0.44 0.01 0.017
c 0.1 0.25 0.004 0.01 D 1.52 1.8 0.06 0.071 E 1.11 1.45 0.044 0.057 H 2.3 2.7 0.09 0.106
L 0.1 0.46 0.004 0.02
Q1 0.1 0.41 0.004 0.016
Ordering type Marking Package Weight Base qty Delivery mode
BAS70W D28 SOT-323 0.006g 3000 Tape & reel BAS70-04W D31 SOT-323 0.006g 3000 Tape & reel BAS70-05W D30 SOT-323 0.006g 3000 Tape & reel BAS70-06W D29 SOT-323 0.006g 3000 Tape & reel
BAS70J 76 SOD-323 0.005g 3000 Tape & reel
n
Epoxy meets UL94,V0
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