Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAS55
High-speed diode
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 10
Page 2
Philips Semiconductors Product specification
High-speed diode BAS55
FEATURES
• Small plastic SMD package
• High switching speed: max. 6 ns
• Continuous reverse voltage:
max. 60 V
DESCRIPTION
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
handbook, halfpage
21
APPLICATIONS
• High-speed switching in surface
mounted circuits.
Marking code: L5p.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
3
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
2
n.c.
3
1
MAM185
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 60 V
continuous reverse voltage − 60 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 600 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
P
tot
T
stg
T
j
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
=25°C; note 1 − 250 mW
amb
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 2
Page 3
Philips Semiconductors Product specification
High-speed diode BAS55
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3; IF= 200 mA; DC value;
note 1
reverse current see Fig.5
=60V − 100 nA
V
R
=60V; Tj= 150 °C − 100 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2.5 pF
reverse recovery time when switched from IF= 400 mA to
IR= 400 mA; RL= 100 Ω;
measured at IR= 40 mA; see Fig.7
forward recovery voltage when switched to IF= 400 mA;
tr= 30 ns; see Fig.8
when switched to I
= 400 mA;
F
tr= 100 ns; see Fig.8
− 1.0 V
− 6ns
− 2V
− 1.5 V
Note
1. T
=25°C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 3
Page 4
Philips Semiconductors Product specification
High-speed diode BAS55
GRAPHICAL DATA
amb
MBG441
(oC)
300
handbook, halfpage
I
F
(mA)
200
100
0
0 100 200
Device mounted on an FR4 printed-circuit board.
T
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
Tj=25°C.
1
MBH279
VF (V)
Fig.3 Forward current as a function of forward
voltage; typical values.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG703
10
2
10
3
10
tp (µs)
4
10
1996 Sep 10 4
Page 5
Philips Semiconductors Product specification
High-speed diode BAS55
2
10
handbook, halfpage
I
R
(µA)
10
1
−1
10
−2
10
0
(1) VR= 60V; maximum values.
(2) VR= 60V; typical values.
(1)
(2)
100
Fig.5 Reverse current as a function of
junction temperature.
Tj (
MBH282
o
C)
200
2.0
handbook, halfpage
Cd
(pF)
1.5
1.0
0.5
0
0102030
f =1 MHz; Tj=25°C.
MBH283
V
(V)
R
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 10 5
Page 6
Philips Semiconductors Product specification
High-speed diode BAS55
handbook, full pagewidth
R = 50SΩ
V = V I x R
RF S
(1) IR=40mA.
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
t
r
10%
V
R
90%
t
p
input signal
Fig.7 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
I
R = 50SΩ
Ω1 k Ω450
D.U.T.
I
OSCILLOSCOPE
R = 50iΩ
MGA882
Input signal: forward pulse duration tp= 300ns; duty factor δ = 0.01.
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 10 6
10%
t
r
90%
t
p
input
signal
V
V
fr
t
t
output
signal
Page 7
Philips Semiconductors Product specification
High-speed diode BAS55
PACKAGE OUTLINE
3.0
handbook, full pagewidth
0.55
0.45
0.150
0.090
2.8
1.9
0.95
21
B
A
M
A
0.2
30
max
0.1
max
max
o
2.5
1.4
max
M0.1 AB
1.2
MBC846
o
10
3
0.48
0.38
TOP VIEW
Dimensions in mm.
10
max
o
1.1
max
Fig.9 SOT23.
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 10 7
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