Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BAS516
High-speed diode
Product specification
1998 Aug 31
Page 2
Philips Semiconductors Product specification
High-speed diode BAS516
FEATURES
• Ultra small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 75 V
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
handbook, halfpage
12
• High-speed switching in e.g. surface mounted circuits.
Top view
MAM408
DESCRIPTION
The BAS516 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD523
(SC79) SMD plastic package.
Marking code: 6.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current Ts=90°C; note 1; see Fig.2 − 250 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation Ts=90°C; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. T
is the temperature at the soldering point of the cathode tab.
s
1998 Aug 31 2
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Philips Semiconductors Product specification
High-speed diode BAS516
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
= 1 mA 715 mV
F
I
= 10 mA 855 mV
F
=50mA 1 V
I
F
I
= 150 mA 1.25 V
F
reverse current see Fig.5
= 25 V 30 nA
V
R
V
=75V 1 µA
R
V
= 25 V; Tj= 150 °C30µA
R
= 75 V; Tj= 150 °C; 50 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 1 pF
reverse recovery time when switched from IF= 10 mA to IR= 10 mA;
4ns
RL= 100 Ω; measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA; tr= 20 ns; see Fig.8 1.75 V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 120 K/W
Note
1. Soldering point of the cathode tab.
1998 Aug 31 3
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Philips Semiconductors Product specification
High-speed diode BAS516
GRAPHICAL DATA
500
handbook, halfpage
I
F
(mA)
400
300
200
100
0
0 100 15050 200
Fig.2 Maximum permissible continuous
MGM762
Ts (oC)
forward current as a function of
soldering point temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
(1) (3)(2)
1
MBG382
VF (V)
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents; Tj=25°C prior to surge.
10
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
2
10
3
10
tp (µs)
4
10
1998 Aug 31 4
Page 5
Philips Semiconductors Product specification
High-speed diode BAS516
MGA884
o
j
200
I
(nA)
5
10
R
V = 75 V
max
typ
R
75 V
25 V
typ
100
T ( C)
4
10
3
10
2
10
10
0
Fig.5 Reverse current as a function of junction
temperature.
0.6
handbook, halfpage
C
d
(pF)
0.4
0.2
0
0
f = 1 MHz; Tj=25°C.
48 16
Fig.6 Diode capacitance as a function of
reverse voltage; typical values.
12
V
R
MBK881
(V)
1998 Aug 31 5
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Philips Semiconductors Product specification
High-speed diode BAS516
handbook, full pagewidth
R = 50SΩ
V = V I x R
RF S
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
t
r
10%
V
R
90%
t
p
input signal
(1) IR= 1 mA.
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time t
= 0.35 ns.
r
Fig.7 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
I
R = 50SΩ
Ω1 k Ω450
D.U.T.
OSCILLOSCOPE
R = 50iΩ
MGA882
I
10%
t
r
90%
t
p
input
signal
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥ 100 ns; duty factor δ≤0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
1998 Aug 31 6
V
V
fr
t
t
output
signal
Page 7
Philips Semiconductors Product specification
High-speed diode BAS516
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD523
A
c
vM
H
E
A
D
12
b
E
p
(1)
OUTLINE
VERSION
SOD523 SC-79
IEC JEDEC EIAJ
A
REFERENCES
0 0.5 1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT b
Note
1. The marking bar indicates the cathode.
mm
A
0.7
0.5
0.35
0.25
p
PROJECTION
cD
0.2
1.3
0.1
1.1
EUROPEAN
E
0.9
0.7
H
E
1.7
0.15
1.5
ISSUE DATE
98-11-25
v
1998 Aug 31 7
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Philips Semiconductors Product specification
High-speed diode BAS516
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 31 8
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Philips Semiconductors Product specification
High-speed diode BAS516
NOTES
1998 Aug 31 9
Page 10
Philips Semiconductors Product specification
High-speed diode BAS516
NOTES
1998 Aug 31 10
Page 11
Philips Semiconductors Product specification
High-speed diode BAS516
NOTES
1998 Aug 31 11
Page 12
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Printed in The Netherlands 115104/00/01/pp12 Date of release: 1998 Aug 31 Document order number: 9397 75004287
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