Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D050
BAS45A
Low-leakage diode
Product specification
Supersedes data of June 1994
1996 Mar 13
Page 2
Philips Semiconductors Product specification
Low-leakage diode BAS45A
FEATURES
• Continuous reverse voltage:
max. 125 V
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
• Repetitive peak forward current:
max. 625 mA
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 µs.
handbook, halfpage
k
a
MAM156
APPLICATION
• Low leakage current applications.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 125 V
continuous reverse voltage − 125 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t
=1µs − 4A
p
=1ms − 1A
t
p
t
=1s − 0.5 A
p
P
tot
T
stg
T
j
total power dissipation T
=25°C − 300 mW
amb
storage temperature −65 +175 °C
junction temperature − 175 °C
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13 2
Page 3
Philips Semiconductors Product specification
Low-leakage diode BAS45A
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
I
=1mA − 780 mV
F
I
=10mA − 860 mV
F
= 100 mA − 1000 mV
I
F
reverse current see Fig.5
V
= 125 V; E
R
= 30 V; Tj= 125 °C; E
V
R
V
= 125 V; Tj= 125 °C; E
R
V
= 125 V; Tj= 150 °C; E
R
= 100 lx − 1nA
max
= 100 lx − 300 nA
max
= 100 lx − 500 nA
max
= 100 lx − 2 µA
max
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 4pF
reverse recovery time when switched from IF= 10 mA to
1.5 −µs
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 8 mm from the body 300 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13 3
Page 4
Philips Semiconductors Product specification
Low-leakage diode BAS45A
GRAPHICAL DATA
(oC)
MBG522
200
300
handbook, halfpage
I
F
(mA)
200
100
0
0 100
Device mounted on a printed-circuit board without metallization pad.
T
amb
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
0 1.00.5 1.5
(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
(1) (2) (3)
MBG523
VF (V)
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents;Tj=25°C prior to surge.
10
2
10
3
10
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
tp (µs)
MBG704
4
10
1996 Mar 13 4
Page 5
Philips Semiconductors Product specification
Low-leakage diode BAS45A
4
10
handbook, halfpage
I
R
(nA)
3
10
2
10
10
max
typ
MBD456
1
1
10
100
o
T ( C)
j
VR= 125 V.
Fig.5 Reverse current as a function of junction
temperature.
3
handbook, halfpage
C
d
(pF)
MBG524
2
1
150500
0
01020155
VR (V)
f = 1 MHz; Tj=25°C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
D.U.T.
R = 50SΩ
V = V I x R
RF S
I
F
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
V
R
Fig.7 Reverse recovery time test circuit and waveforms.
1996 Mar 13 5
t
r
10%
90%
input signal
t
p
t
I
F
t
rr
t
(1)
output signal
Page 6
Philips Semiconductors Product specification
Low-leakage diode BAS45A
PACKAGE OUTLINE
handbook, full pagewidth
1.6
max
Dimensions in mm.
The black marking band indicates the cathode.
25.4 min 25.4 min
3.04
max
0.55
max
MSA212 - 1
Fig.8 SOD68 (DO-34).
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 13 6
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