Page 1
Silicon Schottky Diodes
g
BAS 40 ...
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
1
BAS 40 BAS 40-05 BAS 40-06BAS 40-04
3
3
13
EHA07002
1
2
EHA07005
1
3
2
EHA07004
1
Type Marking Pin Configuration Package
BAS 40
BAS 40-04
43s
44s
1 = A
1 = A1
2 n.c.
2 = C2
3
2
EHA07006
SOT-23
SOT-23
2
VPS05161
BAS 40-05
BAS 40-06
45s
46s
1 = A1
1 = C1
2 = A2
2 = C2
SOT-23
SOT-23
Maximum Ratings
Parameter
Diode reverse voltage 40 V
Surge forward current, t ≤ 10 ms
Total power dissipation BAS 40, TS ≤ 81°C P
BAS 40-04, BAS 40-05, BAS 40-06 , TS ≤ 55°C P
Junction temperature °C150
Operating temperature range
Storage temperature
Symbol Value Unit
V
R
I
F
I
FSM
tot
tot
T
j
T
op
T
st
120 mAForward current
200
250 mW
250
-55 ... 150
-55 ... 150
Thermal Resistance
1)
Junction - ambient
Junction - ambient BAS 40-04 ...
Junction - soldering point BAS 40
Junction - soldering point BAS 40-04 ...
BAS 40
R
R
R
R
thJA
thJA
thJS
thJS
≤ 345
≤ 515
≤ 275
≤ 375
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Oct-07-19991
Page 2
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAS 40 ...
Parameter
DC characteristics
Breakdown voltage
I
= 10 µA
(BR)
Reverse current
V
= 30 V
R
V
= 40 V
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 40 mA
F
AC characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
V
I
V
C
R
(BR)
F
T
40 - - V
-
-
-
-
-
-
-
310
450
720
1
10
380
500
1000
- 54
µA
mV
pF
= 25 mA
I
F
Differential forward resistance
= 10 mA, f = 10 kHz
I
F
τ
R
--
F
- 10 -
100
psCharge carrier life time
Ω
Oct-07-19992
Page 3
BAS 40 ...
Forward current IF = f (VF)
T
= 25°C
A
2
10
Ι
F
mA
1
10
T
10
10
10
-1
-2
0
0.0
0.5 1.0 V 1.5
= -40 ˚C
A
25 ˚C
85 ˚C
150 ˚C
Reverse current
T
= Parameter
A
EHB00038BAS 40...
Ι
R
10
10
10
3
µ
A
2
1
I
= f (VR)
R
EHB00039BAS 40...
TA= 150 C
85 C
0
10
-1
10
25 C
-2
10
0
V
F
10 20 30 V 40
V
R
Diode capacitance CT = f (VR)
f = 1MHz
5
C
T
pF
4
3
2
1
0
0
10 20 V 30
Differential forward resistance rf = f (IF)
f = 10 kHz
EHB00040BAS 40...
V
R
3
10
r
f
Ω
2
10
1
10
3
10
0.1
1 10 mA 100
EHB00041BAS 40...
Ι
F
Oct-07-19993
Page 4
BAS 40 ...
Forward current
I
= f (TA*;TS)
F
* Package mounted on epoxy
200
Ι
F
mA
160
140
120
100
80
60
40
20
0
0
50 100 ˚C 150
EHB00150BAS 40...
T
AS
T
T ; T
A
S
Oct-07-19994
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