Page 1
Schottky Barrier Diode
g
Features
D
Integrated protection ring against
static discharge
D
Very low forward voltage
BAS386
Vishay Telefunken
Applications
Applications where a very low forward voltage
is required
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Peak forward surge current tp = 10 ms I
Repetitive peak forward current tp ≤ 1 s I
Forward current I
Average forward current I
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
R
FSM
FRM
F
FAV
j
stg
96 12315
50 V
5 A
500 mA
200 mA
200 mA
125
–65...+150
320 K/W
°
C
°
C
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=0.1mA V
IF=1mA V
IF=10mA V
IF=30mA V
IF=100mA V
Reverse current VR=40V I
Diode capacitance VR=1V, f=1MHz C
Document Number 85505
Rev. 3, 01-Apr-99 1 (4)
F
F
F
F
F
R
D
www.vishay.de • FaxBack +1-408-970-5600
300 mV
380 mV
450 mV
600 mV
900 mV
5
8 pF
m
A
Page 2
BAS386
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
500
450
400
350
300
250
200
150
100
R
P – Reverse Power Dissipation ( mW )
VR = 50 V
PR–Limit
@100%V
R
=
thJA
540K/W
50
0
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15827
PR–Limit
@80%V
R
R
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
10000
10000
VR = V
RRM
1000
1000
m
100
100
10
10
R
I – Reverse Current ( A )
1
1
25 50 75 100 125 150
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15828
1000
100
10
1
F
I – Forward Current ( A )
0.1
0 0.5 1.0 1.5
Tj=150°C
Tj=25°C
VF – Forward Voltage ( V )15829
Figure 3. Forward Current vs. Forward Voltage
10
9
8
7
6
5
4
3
2
D
C – Diode Capacitance ( pF )
1
0
0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )15830
f=1MHz
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85505
Figure 4. Diode Capacitance vs. Reverse Voltage
Rev. 3, 01-Apr-992 (4)
Page 3
Dimensions in mm
BAS386
Vishay Telefunken
96 12072
Document Number 85505
Rev. 3, 01-Apr-99 3 (4)
www.vishay.de • FaxBack +1-408-970-5600
Page 4
BAS386
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use V ishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly , any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85505
Rev. 3, 01-Apr-994 (4)
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