Datasheet BAS32L Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
1/3 page (Datasheet)
BAS32L
High-speed diode
Product specification Supersedes data of April 1996
1996 Sep 10
Page 2
Philips Semiconductors Product specification
High-speed diode BAS32L
FEATURES
Small hermetically sealed glass SMD package
High switching speed: max. 4 ns
DESCRIPTION
The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package.
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 75 V
handbook, 4 columns
ka
Repetitive peak forward current: max. 450 mA.
APPLICATIONS
High-speed switching
Cathode indicated by black band.
Fig.1 Simplified outline (SOD80C) and symbol.
MAM061
Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V I
F
I
FRM
I
FSM
RRM R
repetitive peak reverse voltage 75 V continuous reverse voltage 75 V continuous forward current see Fig.2; note 1 200 mA repetitive peak forward current 450 mA non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs 4A t=1ms 1A t=1s 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 500 mW
amb
storage temperature 65 +200 °C junction temperature 200 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 2
Page 3
Philips Semiconductors Product specification
High-speed diode BAS32L
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
V
(BR)R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
= 5 mA 620 750 mV
F
I
= 100 mA 1000 mV
F
= 100 mA; Tj= 100 °C 930 mV
I
F
reverse current see Fig.5
V
=20V 25 nA
R
=75V 5 µA
V
R
V
=20V; Tj= 150 °C 50 µA
R
V
=75V; Tj= 150 °C 100 µA
R
reverse breakdown voltage IR= 100 µA 100 V diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF reverse recovery time when switched from IF= 10 mA to
4ns IR= 10 mA; RL= 100 ; measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 50 mA;
2.5 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point 300 K/W thermal resistance from junction to ambient note 1 350 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 3
Page 4
Philips Semiconductors Product specification
High-speed diode BAS32L
GRAPHICAL DATA
amb
MBG451
(oC)
300
handbook, halfpage
I
F
(mA)
200
100
0
0 100 200
Device mounted on an FR4 printed-circuit board.
T
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
600
handbook, halfpage
I
F
(mA)
400
(1) (2) (3)
200
0
012
(1) Tj= 175°C; typical values. (2) Tj=25°C; typical values. (3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
MBG464
VF (V)
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
1
10
1
Based on square wave currents. Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1996 Sep 10 4
Page 5
Philips Semiconductors Product specification
High-speed diode BAS32L
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
1
10
2
10
0 100
(1) VR= 75V; maximum values. (2) VR= 75V; typical values. (3) VR= 20V; typical values.
(1) (2)
Fig.5 Reverse current as a function of
junction temperature.
Tj (
MGD006
(3)
o
C)
200
1.2
handbook, halfpage
C
d
(pF)
1.0
0.8
0.6
0.4 01020
f =1 MHz; Tj=25°C.
MGD004
VR (V)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 10 5
Page 6
Philips Semiconductors Product specification
High-speed diode BAS32L
handbook, full pagewidth
R = 50SΩ
V = V I x R
RF S
(1) IR= 1mA.
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
t
r
10%
V
R
90%
t
p
input signal
Fig.7 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
I
R = 50SΩ
1 k 450
D.U.T.
I
OSCILLOSCOPE
R = 50iΩ
MGA882
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 10 6
10%
t
r
90%
t
p
input signal
V
V
fr
t
t
output
signal
Page 7
Philips Semiconductors Product specification
High-speed diode BAS32L
PACKAGE OUTLINE
handbook, full pagewidth
1.60
O
1.45
0.3 0.3
Dimensions in mm.
3.7
3.3
Fig.9 SOD80C.
MBA390 - 2
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Sep 10 7
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