Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D070
BAS28
High-speed double diode
Product specification
Supersedes data of April 1996
1996 Sep 10
Page 2
Philips Semiconductors Product specification
High-speed double diode BAS28
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA .
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS28 consists of two
high-speed switching diodes,
fabricated in planar technology, and
encapsulated in the small plastic
SMD SOT143 package. The diodes
are not connected.
handbook, halfpage
Top view
Marking code: JTp.
43
21
Fig.1 Simplified outline (SOT143) and symbol.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)
4
3
1
2
MAM059
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 215 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 2
Page 3
Philips Semiconductors Product specification
High-speed double diode BAS28
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
=1mA − 715 mV
F
I
=10mA − 855 mV
F
=50mA − 1V
I
F
I
= 150 mA − 1.25 V
F
reverse current see Fig.5
=25V − 30 nA
V
R
V
=75V − 1 µA
R
V
=25V; Tj= 150 °C − 30 µA
R
=75V; Tj= 150 °C − 50 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 1.5 pF
reverse recovery time when switched from IF= 10 mA to
− 4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA;
− 1.75 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 3
Page 4
Philips Semiconductors Product specification
High-speed double diode BAS28
GRAPHICAL DATA
150
MSA562 -1
T
amb
o
(
C)
250
I
F
(mA)
200
150
100
50
0
0 50 100 200
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function
of forward voltage.
(1) (3)(2)
1
MBG382
VF (V)
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1996 Sep 10 4
Page 5
Philips Semiconductors Product specification
High-speed double diode BAS28
5
10
I
R
(nA)
10
10
10
10
V = 75 V
max
typ
R
75 V
25 V
typ
100
T ( C)
j
4
3
2
0
Fig.5 Reverse current as a function of
junction temperature.
MGA884
o
200
0.8
handbook, halfpage
C
d
(pF)
0.6
0.4
0.2
0
0816124
f = 1 MHz; Tj=25°C.
MBG446
VR (V)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 10 5
Page 6
Philips Semiconductors Product specification
High-speed double diode BAS28
handbook, full pagewidth
R = 50SΩ
V = V I x R
RF S
(1) IR= 1 mA.
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
t
r
10%
V
R
90%
t
p
input signal
Fig.7 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
I
R = 50SΩ
Ω1 k Ω450
D.U.T.
I
OSCILLOSCOPE
R = 50iΩ
MGA882
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 10 6
10%
t
r
90%
t
p
input
signal
V
V
fr
t
t
output
signal
Page 7
Philips Semiconductors Product specification
High-speed double diode BAS28
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
DEFINITIONS
10
max
3.0
0.150
30
max
0.090
0.1
max
max
o
o
10
0.88
0.75
0.60
o
1.1
max
2.8
1.9
43
1
2
0
0.1
TOP VIEW
0.48
1.7
0
0.1
B
A
1.4
1.2
M0.1 AB
2.5
max
0.2
MBC845
M
AB
Fig.9 SOT143.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 10 7
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